SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
CS
CS
CS
CS
\
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8S512K32 and
AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as
512Kx32 bits. These devices achieve high speed access, low power
consumption and high reliability by employing advanced CMOS
memory technology .
This military temperature grade product is ideally suited for
military and space applications.
FEATURES
• Operation with single 5V supply
• High speed: 12, 15, 17, 20, 25 and 35ns
• Built in decoupling caps for low noise
• Organized as 512Kx32 , byte selectable
• Low power CMOS
• TTL Compatible Inputs and Outputs
•Future offerings
3.3V Power Supply
OPTIONS MARKINGS
• Operating Temperature Ranges
Military (-55oC to +125oC) XT
Industrial (-40oC to +85oC) IT
• Timing
12ns -12
15ns -15
17ns -17
20ns -20
25ns -25
35ns -35
45ns -45
55ns -55
• Package
Ceramic Quad Flatpack Q
Ceramic Quad Flatpack Q1
Ceramic Quad Flatpack Q2
Pin Grid Array P
• Low Power Data Retention Mode L
• Pinout
Military (no indicator)
Commercial A*
*(available with Q package only)
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-94611 (Military Pinout)
• MIL-STD-883
68 Lead CQFP (Q, Q1 & Q2)
Military SMD Pinout Option
512K x 32 SRAM
SRAM MEMORY ARRAY
68 Lead CQFP
Commercial Pinout Option (Q & Q1 with A)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
I/O17
I/O18
I/O19
Vss
I/O20
I/O21
I/O22
I/O23
Vcc
I/O24
I/O25
I/O26
I/O27
Vss
I/O28
I/O29
I/O30
I/O 14
I/O 13
I/O 12
Vss
I/O 11
I/O 10
I/O 9
I/O 8
Vcc
I/O 7
I/O 6
I/O 5
I/O 4
Vss
I/O 3
I/O 2
I/O 1
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
I/O 31
A6
A5
A4
A3
A2
A1
A0
Vcc
A13
A12
A11
A10
A9
A8
A7
I/O 0
I/O 16
A18
A17
CS4\
CS3\
CS2\
CS1\
NC
Vcc
NC
NC
OE\
WE\
A16
A15
A14
I/O 15
9
8
7
6
5
4
3
2
1
68
67
66
65
64
63
62
61
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
Vcc
A11
A12
A13
A14
A15
A16
CS1\
OE\
CS2\
A17
WE2\
WE3\
WE4\
A18
NC
NC
NC
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
9
8
7
6
5
4
3
2
1
68
67
66
65
64
63
62
61
66 Lead PGA (P)
Military SMD Pinout
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
Austin Semiconductor, Inc.
CS\4
CS\3
CS\2
CS\1
WE\
OE\
A0 - A18
I/O 24 - I/O 31
I/O 16 - I/O 23
I/O 8 - I/O 15
I/O 0 - I/O 7
M3
M2
M1
M0
512K x 8
512K x 8
512K x 8
512K x 8
COMMERCIAL PINOUT/BLOCK DIAGRAM
CS
MILITARY PINOUT/BLOCK DIAGRAM
CS
CS
CS
TRUTH TABLE
MODE OE\ CE\ WE\ I/O POWER
Read LLH
DOUT ACTIVE
Write(2) XLLDIN ACTIVE
Standby XHX
High Z STANDBY
CS
CS4\
CS3\
CS2\
CS1\
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage of Vcc Supply Relative to Vss......................-.5V to +7V
Storage T emperature............................................-65°C to +150°C
Short Circuit Output Current(per I/O).................................20mA
Voltage on Any Pin Relative to Vss....................-.5V to Vcc+1V
Maximum Junction T emperature**...................................+150°C
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation on the
device at these or any other conditions above those indicated
in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability .
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow . See the Application
Information section at the end of this datasheet for more infor-
mation.
DESCRIPTION SYMBOL -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES
Power Supply
Current: Operating Icc 250 200 700 650 600 570 570 550 mA 3,13
Power Supply
Current: Standby I
SBT1
80 80 240 240 190 190 150 150 mA 3, 13
CMOS Standby I
SBT2
80 80 80 80 80 80 80 80 mA
VIN = VCC - 0.2V, or
VSS +0.2V
VCC=Max; f = 0Hz
MAX
CONDITIONS
CS\<VIL; VCC = MAX
f = MAX = 1/ tRC (MIN)
Outputs Open
CS\>VIH; VCC = MAX
f = MAX = 1/ tRC (MIN)
Outputs Open
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%)
DESCRIPTION CONDITIONS SYMBOL MIN MAX UNITS
NOTES
Input High (logic 1) Voltage V
IH
2.2 V
CC
+.5 V1
Input Low (logic 1) Voltage V
IL
-0.5 0.8 V 1,2
Input Leakage Current
ADD,OE
I
LI1
-10 10
µ
A
Input Leakage Current
WE, CE
I
LI2
-10 10
µ
A
Output(s) Disabled
0V<V
OUT
<V
CC
Output High Voltage I
OH
= 4.0mA V
OH
2.4 V 1
Output Low Voltage I
OL
= 8.0mA V
OL
0.4 V 1
Supply Voltage V
CC
4.5 5.5 V 1
0V<V
IN
<V
CC
Output Leakage Current
I/O
ILO µA
10-10
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
AC TEST CONDITIONS
NOTE:
1. This parameter is sampled.
OH
OL
I
I
Current Source
Current Source
Vz = 1.5V
(Bipolar
Supply)
Device
Under
Test
Ceff = 50pf
-+
+
NOTES:
Vz is programmable from -2V to + 7V.
IOL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of VOH and VOL.
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
Input pulse levels.........................................VSS to 3V
Input rise and fall times.........................................5ns
Input timing reference levels...............................1.5V
Output reference levels........................................1.5V
Output load..............................................See Figure 1
T est Specifications
SYMBOL PARAMETER MAX UNITS
CADD A0 - A18 Capacitance 50 pF
COE OE\ Capacitance 50 pF
CWE, CCS WE\ and CS\ Capacitance 20 pF
CIO I/O 0- I/O 31 Capacitance 20 pF
CWE ("A" version) WE\ Capacitance 50 pF
CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1
Figure 1
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NO TE 5) (-55oC<TA < 125oC and -40oC to +85oC; VCC = 5V +10%)
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
READ cycle time
t
RC 12 15 17 20 25 35 45 55 ns
Address access time
t
AA 12 15 17 20 25 35 45 55 ns
Chip select access time
t
ACS 12 15 17 20 25 35 45 55 ns
Output hold from address change
t
OH 22222222 ns
Chip select to output in Low-Z
t
LZCS 22222222 ns4,6,7
Chip select to output in High-Z
t
HZCS 789 1012152020ns4,6,7
Output enable access time
t
AOE 789 1012152020ns
Output enable to output in Low-Z
t
LZOE 00000000 ns4,6
Output disable to output in High-Z
t
HZOE 12 12 12 15 20 20 ns 4,6
WRITE cycle time
t
WC 12 15 17 20 25 35 45 55 ns
Chip select to end of write
t
CW 10 12 15 15 17 20 25 25 ns
Address valid to end of write
t
AW 10 12 15 15 17 20 25 25 ns
Address setup time
t
AS 22222222 ns
Address hold from end of write
t
AH 11111111 ns
WRITE pulse width
t
WP1 10 12 15 15 17 20 25 25 ns
WRITE pulse width
t
WP2 10 12 15 15 17 20 25 25 ns
Data setup time
t
DS 8 10121012152020 ns
Data hold time
t
DH 00000000 ns
Write disable to output in Low-z
t
LZWE 22222222 ns4,6,7
Write enable to output in High-Z
t
HZWE 7 8 9 1113151515ns4,6,7
UNITS
-35-12 -15 -45 -55
WRITE CYCLE
READ CYCLE
DESCRIPTION -20-17 -25
SYMBOL NOTES
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
Austin Semiconductor, Inc.
READ CYCLE NO. 1
READ CYCLE NO. 2
1234
1234
1234
1234
1234
1234
12345
1
234
5
12345
1
1
1
1
1
1
ADDRESS
DATA I/O PREVIOUS DATA VALID DATA VALID
tOH
tAA
tRC
ADDRESS
tRC
12345678
12345678
12345678
12345678
12345678
1234
1
23
4
1
23
4
1
23
4
1234
12345
1
234
5
1
234
5
12345
123456789
123456789
123456789
123456789
123456789
123456
1
2345
6
1
2345
6
1
2345
6
123456
1234567
1
23456
7
1
23456
7
1234567
123456789012
123456789012
123456789012
123456789012
123456789012
1234
1
23
4
1
23
4
1
23
4
1234
12345
1
234
5
1
234
5
12345
123456789012
123456789012
123456789012
123456789012
123456789012
123456
1
2345
6
1
2345
6
1
2345
6
123456
1234567
1
23456
7
1
23456
7
1
23456
7
1234567
1234
1234
1234
1234
1234
1234
1234
1234
123
1
2
3
1
2
3
123
1
1
1
1
1
1
1
1
HIGH IMPEDANCE DATA VALID
tAA
tACS
tLZCS tHZCS
tHZOE
tAOE
tLZOE
CS\
OE\
DAT A I/O
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
Austin Semiconductor, Inc.
WRITE CYCLE NO. 2
(Write Enable Controlled)
WRITE CYCLE NO. 1
(Chip Select Controlled)
ADDRESS
tWC
123456
123456
123456
123456
DATA VALID
tAW
tAS
tWP21
tCW
CS\
WE\
DAT A I/O tDH
tDS
12345678
12345678
12345678
12345678
123456789012
123456789012
123456789012
123456789012
12345
1
234
5
1
234
5
12345
123456
1
2345
6
1
2345
6
123456
tAH
ADDRESS
tWC
12345678
12345678
12345678
12345678
12345678
1234
1
23
4
1
23
4
1
23
4
1234
12345
1
234
5
1
234
5
1
234
5
12345
123456789012
123456789012
123456789012
123456789012
123456789012
12345
1
234
5
1
234
5
1
234
5
12345
1234567
1
23456
7
1
23456
7
1
23456
7
1234567
123456
123456
123456
123456
1234
1234
1234
12345678901234
1
234567890123
4
12345678901234
1
1
1
1
1
1
DATA VALID
tAW tCW
tAS
tAH
tLZWE
tWP11
tHZWE
CS\
WE\
DAT A I/O
1234
1234
1234
1234
1
23
4
1
23
4
1234
1234
1
23
4
1
23
4
1234
tDH
tDS
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
Austin Semiconductor, Inc.
7. At any given temperature and voltage condition,
tHZCS, is less than tLZCS, and tHZWE is less than tLZWE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip selects and output
enable are held in their active state.
10. Address valid prior to or coincident with latest occurring
chip enable.
11. tRC= READ cycle time.
12. Chip enable (CS\) and write enable (WE\) can initiate and
terminate a WRITE cycle.
13. ICC is for 32 bit mode.
NOTES
1. All voltages referenced to VSS (GND).
2. -2V for pulse width <20ns.
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
4. This parameter guaranteed but not tested.
5. Test conditions as specified with output loading as
shown in Fig. 1 unless otherwise noted.
6. tHZCS, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2.
Transition is measured +/- 200 mV typical from steady state
voltage, allowing for actual tester RC time constant.
RC(MIN)
unloaded, and f= HZ.
t1
LOW VCC DATA RETENTION WAVEFORM
LOW POWER CHARACTERISTICS (L Version Only)
DESCRIPTION SYMBOL MIN MAX UNITS NOTES
V
CC
for Retention Data V
DR
2V
V
CC
= 2V I
CCDR
20 mA
V
CC
= 3V I
CCDR
28* mA
Chip Deselect to Data
Retention Time t
CDR
0ns4
Operation Recovery Time t
R
t
RC
ns 4, 11
Data Retention Current All Inputs @ Vcc + 0.2V
or Vss + 0.2V,
CS\ = Vcc + 0.2V
CONDITIONS
123456789012345678
123456789012345678
123456789012345678
123456789012345678
123456789012345678
123456789012345678
123456789012345678
123456789012345678
12345
1
234
5
1
234
5
1
234
5
1
234
5
1
234
5
1
234
5
12345
12345678
1
234567
8
1
234567
8
1
234567
8
1
234567
8
1
234567
8
1
234567
8
12345678
123456789012345678
123456789012345678
123456789012345678
123456789012345678
123456789012345678
123456789012345678
123456789012345678
123456789012345678
12345
1
234
5
1
234
5
1
234
5
1
234
5
1
234
5
1
234
5
12345
12345678
1
234567
8
1
234567
8
1
234567
8
1
234567
8
1
234567
8
1
234567
8
12345678
DATA RETENTION MODE
4.5V 4.5V
VDR>2V
VDR
tCDR tR
VCC
CS\ 1-4
* -12 and -15 have a 32mA limit.
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #702 (Package Designator Q)
SMD 5962-94611, Case Outline M
*All measurements are in inches.
4 x D2
4 x D1
D
b
e
MIN MAX
A 0.123 0.200
A1 0.118 0.186
A2 0.000 0.020
B
b 0.013 0.017
D
D1 0.870 0.890
D2 0.980 1.000
E 0.936 0.956
e
R 0.005 ---
L1 0.035 0.045
SYMBOL
0.800 BSC
0.050 BSC
SMD SPECIFICATIONS
0.010 REF
A2
SEE DETAIL A
A
A1
E
DETAIL A
L1
1o - 7o
R
B
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
Austin Semiconductor, Inc.
1
D2
D3
Dimensions in inches
e
L1
R
.050 BSC
.010 TYP
ASI PACKAGE SPECIFICATION
A1
D1
B
D
b
A
Symbol
.890
.200
Max
.080
.017
.070
.010 REF
.870
.013
Min
.800 BSC
1.010 1.030
.050 .065
D
D1
D2
b
eD3
A
A1
B
L1
R
.975 .995
MECHANICAL DEFINITIONS*
ASI Package Designator Q2
*All measurements are in inches.
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #904 (Package Designator P )
SMD 5962-94611, Case Outline T
*All measurements are in inches.
4 x D
D1
D2
E1
Pin 66 ePin 11
Pin 1
(identified by
0.060 square pad)
Pin 56
A
A1
L
φb
e
φb1
MIN
MAX
A 0.144 0.181
A1 0.025 0.035
φ
b0.016 0.020
φ
b1 0.045 0.055
D 1.065 1.085
D1/E1
D2
e
L 0.145 0.155
0.600 TYP
0.100 TYP
SYMBOL
1.000 TYP
SMD SPECIFICATIONS
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case (Package Designator Q1)
SMD 5962-94611, Case Outline A
*All measurements are in inches.
MIN MAX
A--- 0.200
A1 0.054 ---
b0.013 0.017
B
c0.009 0.012
D/E 0.980 1.000
D1/E1 0.870 0.890
D2/E2
e
L0.035 0.045
R
SYMBOL SMD SPECIFICATIONS
0.010 TYP
0.010 TYP
0.800 BSC
0.050 BSC
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
Austin Semiconductor, Inc.
EXAMPLE: AS8S512K32Q-15/883C
Device Number Package
Type
Speed
ns Options** Process Device
Number Options** Package
Type Speed ns Process
AS8S512K32 Q -12 /* AS8S512K32 Q1 -12 /*
AS8S512K32 Q -15 /* AS8S512K32 Q1 -15 /*
AS8S512K32 Q -17 /* AS8S512K32 Q1 -17 /*
AS8S512K32 Q -20 /* AS8S512K32 Q1 -20 /*
AS8S512K32 Q -25 /* AS8S512K32 Q1 -25 /*
AS8S512K32 Q -35 /* AS8S512K32 Q1 -35 /*
AS8S512K32 Q -45 /* AS8S512K32 Q1 -45 /*
AS8S512K32 Q -55 /* AS8S512K32 Q1 -55 /*
EXAMPLE: AS8S512K32P-25L/XT
Device Number Package
T
yp
e
Speed
ns Options** Process Device
Number Options** Package
T
yp
eSpeed ns Process
AS8S512K32 P -12 /* AS8S512K32 Q2 -12 /*
AS8S512K32 P -15 /* AS8S512K32 Q2 -15 /*
AS8S512K32 P -17 /* AS8S512K32 Q2 -17 /*
AS8S512K32 P -20 /* AS8S512K32 Q2 -20 /*
AS8S512K32 P -25 /* AS8S512K32 Q2 -25 /*
AS8S512K32 P -35 /* AS8S512K32 Q2 -35 /*
AS8S512K32 P -45 /* AS8S512K32 Q2 -45 /*
AS8S512K32 P -55 /* AS8S512K32 Q2 -55 /*
EXAMPLE: AS8S512K32Q1-55/IT
EXAMPLE: AS8S512K32Q2-35L/XT
ORDERING INFORMATION
*A V AILABLE PROCESSES
IT = Industrial Temperature Range -40oC to +85oC
XT = Extended Temperature Range -55oC to +125oC
Q = Full Military Processing -55oC to +125oC
SP ACE= Class K Equivalent -55oC to +125oC
**DEFINITION OF OPTIONS
no indicator = Military Pinout
SRAMSRAM
SRAMSRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE
Package Designator Q
ASI Part # SMD Part #
AS8S512K32Q-12/Q 5962-9461120HMX
AS8S512K32Q-15/Q 5962-9461119HMX
AS8S512K32Q-17/Q 5962-9461110HMX
AS8S512K32Q-20/Q 5962-9461109HMX
AS8S512K32Q-25/Q 5962-9461108HMX
AS8S512K32Q-35/Q 5962-9461107HMX
AS8S512K32Q-45/Q 5962-9461106HMX
AS8S512K32Q-55/Q 5962-9461105HMX
AS8S512K32Q-12/Q 5962-9461118HMX
AS8S512K32Q-15/Q 5962-9461117HMX
AS8S512K32Q-17/Q 5962-9461116HMX
AS8S512K32Q-20/Q 5962-9461115HMX
AS8S512K32Q-25/Q 5962-9461114HMX
AS8S512K32Q-35/Q 5962-9461113HMX
AS8S512K32Q-45/Q 5962-9461112HMX
AS8S512K32Q-55/Q 5962-9461111HMX
Package Designator P
ASI Part # SMD Part #
AS8S512K32P-12/Q 5962-9461120HTA
AS8S512K32Q-15/Q 5962-9461119HTA
AS8S512K32P-17/Q 5962-9461110HTA
AS8S512K32P-20/Q 5962-9461109HTA
AS8S512K32P-25/Q 5962-9461108HTA
AS8S512K32P-35/Q 5962-9461107HTA
AS8S512K32P-45/Q 5962-9461106HTX
AS8S512K32P-55/Q 5962-9461105HTX
AS8S512K32Q-15/Q 5962-9461117HTA
AS8S512K32P-12/Q 5962-9461118HTA
AS8S512K32P-17/Q 5962-9461116HTA
AS8S512K32P-20/Q 5962-9461115HTA
AS8S512K32P-25/Q 5962-9461114HTA
AS8S512K32P-35/Q 5962-9461113HTA
AS8S512K32P-45/Q 5962-9461112HTA
AS8S512K32P-55/Q 5962-9461111HTA
Package Designator Q1
ASI Part # SMD Part #
AS8S512K32Q1-12/Q 5962-9461120HAX
AS8S512K32Q1-15/Q 5962-9461119HAX
AS8S512K32Q1-17/Q 5962-9461110HAX
AS8S512K32Q1-20/Q 5962-9461109HAX
AS8S512K32Q1-25/Q 5962-9461108HAX
AS8S512K32Q1-35/Q 5962-9461107HAX
AS8S512K32Q1-45/Q 5962-9461106HAX
AS8S512K32Q1-55/Q 5962-9461105HAX
AS8S512K32Q1-12/Q 5962-9461118HAX
AS8S512K32Q1-15/Q 5962-9461117HAX
AS8S512K32Q1-17/Q 5962-9461116HAX
AS8S512K32Q1-20/Q 5962-9461115HAX
AS8S512K32Q1-25/Q 5962-9461114HAX
AS8S512K32Q1-35/Q 5962-9461113HAX
AS8S512K32Q1-45/Q 5962-9461112HAX
AS8S512K32Q1-55/Q 5962-9461111HAX
