WBFBP-06C
(2×2×0.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HCDW
SURFACE MOUNT SWITCHING DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
Switching Diode
FEATURES
z Ultra-Small Surface Mount Package
z Fast Switching Speed
z High Conductance
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 MMBD4448HCDW
Parameter Symbol Limits Unit
Non-Repetitive Peak re verse voltage VRM 100 V
Peak Repetitive peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80 V
RMS Reverse Vo ltage VR
(
RMS
)
57 V
Forward Continuous Current IFM 500 mA
Average Rectified Output Current IO 250 mA
Non-Repetitive Peak forward surge current @=1.0µs
@=1.0s IFSM
4.0
2.0 A
Power Dissipation Pd 150 mW
Thermal Resistance Junction to Ambient RθJA 625 ℃/W
Junction temperature TJ 150 ℃
Storage temperature range TSTG -65 to +150 ℃
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse Breakd own Voltage VR 80 V IR=100μA
VF1 0.62 0.72 V IF=5mA
VF2 0.855 V IF=10mA
VF3 1.0 V IF=100mA
Forward voltage
VF4 1.25 V IF=150mA
IR1 0.1 µA VR=70V
Reverse current IR2 25 nA VR=20V
Capacitance between terminals CT 3.5 pF VR=6V,f=1MHz
Reverse Recovery Time trr 4 ns VR=6V,IF=5mA
1
FMMBD4448HCDW
Marking:KA7
Typical Characteristics
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.000 0.100 0.000 0.004
b 0.150 0.250 0.006 0.010
D 1.900 2.100 0.075 0.083
E 1.900 2.100 0.075 0.083
D1
E1
e
L
k
z
0. 032 REF.
0. 500 R EF. 0. 020 R EF.
Symbol Dimensions In Millimeters Dimensions In Inches
0. 65 0 TYP. 0. 02 6 TYP.
0. 420 R EF. 0. 017 R EF.
0.800 REF.
0. 400 R EF. 0. 016 R EF.
0. 350 R EF. 0. 014 R EF.
APPLICATION CIRCUITS
Bridge rectifiers
