Document Number: 81146 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.0, 29-Apr-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
VSMY7852X01
Vishay Semiconductors
DESCRIPTION
VSMY7852X01 is an infrared, 850 nm emitting diode based
on surface emitter technology with high radiant power and
high speed, molded in low thermal resistance Little Star
package. A 20 mil chip provides outstanding low forward
voltage and allows DC operation of the device up to 250 mA.
FFEATURES
• Package type: surface mount
• Package form: Little Star®
• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 60°
• Low forward voltage
• Designed for high drive currents: up to 250 mA DC and up
to 1.5 A pulses
• Low thermal resistance: RthJP = 15 K/W
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AAPPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Driver assistance systems
• Machine vision IR data transmission
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
20783
2078
3
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)
VSMY7852X01 42 ± 60 850 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY7852X01-GS08 Tape and reel MOQ: 2000 pcs, 2000 pcs/reel Little Star
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF250 mA
Peak forward current tp/T = 0.5, tp 100 μs IFM 500 mA
Surge forward current tp = 100 μs IFSM 1.5 A
Power dissipation PV500 mW
Junction temperature Tj125 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. figure 7, J-STD-20 Tsd 260 °C
Thermal resistance junction/pin Acc. J-STD-051, soldered on PCB RthJP 15 K/W
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81146
2Rev. 1.0, 29-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
Vishay Semiconductors High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
21779
Tamb - Ambient Temperature (°C)
PV - Power Dissipation (mW)
0
100
200
300
400
500
600
0 20 40 60 80 100 120
RthJP = 15 K/W
21780
Tamb - Ambient Temperature (°C)
IF - Forward Current (mA)
0
50
100
150
200
250
300
0 20 40 60 80 100 120
RthJP = 15 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 250 mA, tp = 20 ms VF1.8 2.0 V
IF = 1.5 A, tp = 100 μs VF2.8 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.5 mV/K
Reverse current VR = 5 V IRnot designed for reverse operation μA
Radiant intensity IF = 250 mA, tp = 20 ms Ie30 42 90 mW/sr
IF = 1.5 A, tp = 100 μs Ie220 mW/sr
Radiant power IF = 250 mA, tp = 20 ms e130 mW
Temperature coefficient of eIF = 1 A TKe- 0.5 %/K
Angle of half intensity ± 60 deg
Peak wavelength IF = 250 mA p850 nm
Spectral bandwidth IF = 250 mA 30 nm
Temperature coefficient of pIF = 250 mA TKp0.2 nm/K
Rise time IF = 250 mA tr8ns
Fall time IF = 250 mA tf10 ns
Document Number: 81146 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.0, 29-Apr-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Relative Radiant Power vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
21781
I
F
- Forward Current (A)
V
F
- Forward Voltage (V)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3
t
p
= 100 µs
21782 IF - Forward Current (A)
Ie - Radiant Intensity (mW/sr)
0.1
1
10
100
1000
0.001 0.01 0.1 1 10
tp = 100 µs
λ- Wavelength (nm)
21776
Φe, rel - Relative Radiant Power
0
0.25
0.5
0.75
1
650 750 850 950
0.4 0.2 0
I
e, rel
- Relative Radiant Intensity
94 8013
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81146
4Rev. 1.0, 29-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
Vishay Semiconductors High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
TAPING DIMENSIONS in millimeters
20846
Document Number: 81146 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.0, 29-Apr-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology Vishay Semiconductors
PACKAGE DIMENISONS in millimeters
20848
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81146
6Rev. 1.0, 29-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
Vishay Semiconductors High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for
Preconditioning acc. to JEDEC, Level 2a
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020B
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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