TOSHIBA TG2000F TOSHIBA MOS TYPE INTEGRATED CIRCUIT GaAs MONOLITHIC TV TUNER, UHF RF AMPLIFIER APPLICATIONS. FEATURES @ On account of this Device build in Bias Circuit, Cut down number of articles. @ Low Noise Figure. : NF=1.5dB (Typ.) @ Operating Voltage. : Vpp =4~5V PIN ASSIGNMENT (TOP VIEW) MARKING GATE 2 GATE 1 TYPE NAME iu < yy gy Ss UD Gl Bi SSOP5-P-0.95 DRAIN GND SOURCE Weight : 0.014g (Typ.) MAXIMUM RATING (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Vpb 6 Vv Gate 2-Drain Voltage VG2D0 -6 Vv Gate 2-Source Voltage VG25 -4 Vv Gate 2 Current IG2 1 mA Drain Power Dissipation PD 150 mv Operating Temperature Range Topr -40~85 C Storage Temperature Range Tstg -55~125 a @ ELECTRICAL CHARACTERISTICS (Ta = 25C) TEST CHARACTERISTIC SYMBOL | CIR- TEST CONDITION MIN. | TYP. | MAX. | UNIT CUIT Gate 2 Leakage Current 16255 |Vps=9, Vgis=9, Vg2g= -3V | _ -4| WA Drain Current IDSs |Vps=2V, Vgis=9, VG25=0 4; 16 | mA Gate 2-Source Cut-off Vos =2V, Ve1s=0 _ _ Voltage VG2s (OFF) Ip = 100A 0.75 3 ] oY Forward Transfer Vps =2V, VG25 =0.5V Admittance Ys ~~ |Ip=2mA, f= 1kHz | 1%] 7 ms . Vpp =4.5V, Vg2 =2.5V _ _ Drain Current IDD 1 R = 3900 11 mA Power Gain Gos > |Yop=4.5V, Vg@2=2.5V 15{ 19 | | aB Noise Figure NF f=800MHz, R= 3900, _ 1.5 2.5 dB 961001EBA2 TOSHIBA Semiconductor Reliability Handbook. @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the 1003TOSHIBA TG2000F CAUTION GaAs (Gallium Arsenide) is used in this product. The dust or vapor cam be dangerous to humans. Do not break, cut, crush or dissolve chemically. Dispose of this product properly according to law. Do not intermingle with normal industrial or domestic waste. This device is electrostatic sensitivity. Please handle with caution. EQUIVALENT CIRCUIT TEST CIRCUIT 1 Dy 5 IDD G2 O+ G,O Pt 33kO, 4 aA & Vpp O+_] VG2 st . AW Os LT I os sm 3 4 xs sa 2 GND TEST CIRCUIT 2 800MHz Gps. NF INPUT OUTPUT Rg=500 SHIELD RL =50Q > = T = {$f c 1~20pF L2 1~20pF CASE C1 : 100pF C2 : 1000pF C3: 10000pF Ly~Lq : $0.8mm SILVER PLATED COPPER WIRE Cc : AIR TRIMMER TTA25A200A (MURATA MFG. Co., LTD.) RFC: g0.35mm COPPER WIRE 3mm ID, 10T 961001EBA2 @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1004TOSHIBA POWER GAIN Gos (dB) POWER GAIN Gps (dB) POWER GAIN Gps (d8) Gps, NF - Vpp 12 G f=B800MHz ps R=3900 Vg2=3.5V] Ta=25ec |"9 2.5V 8 | 2.0V 6 4 2 0 0 2 4 6 8 10 12 DRAIN VOLTAGE Vpp (V) Gps, NF - Vpp 12 Vq2=2.5V Sps R=OPEN | f=800MHz R=OPEN, 3900, 10 Ta=25C R=3900, 8 6 4 2 0 0 2 4 6 8 10 12 DRAIN VOLTAGE Vpp_ (Vv) Gps, IDD - VG2 pp =4.5V 201f = 800MHz = OPEN, 3900, a=25C -20 - 40 -60 - 80 -2.0 -1.0 0 1.0 2.0 3.0 GATE2 VOLTAGE Vg? (V) (dB) NF NOISE FIGURE (dB) NOISE FIGURE NF Ipp (mA) DRAIN CURRENT Ipp (mA) DRAIN CURRENT Ipp (mA) DRAIN CURRENT . INTER MODULATION (dBmw) TION 3RD DISTO: OUTPUT POWER P -30 -40 - 60 -70 TG2000F IDD - VDD R=3900, Ta=25C 0 2 4 6 8 10 DRAIN VOLTAGE Vpp_ (V) IDD - VDD Vg2=2.5V f =800MHz R=OPEN, 3900, Ta=25C 0 2 4 6 8 10 12 DRAIN VOLTAGE Vpp_ (V) Po, IM3 ~ Pi |.P= -2dBmWw 0 P4dB = -7dBmWw Po -20--(f =800MHz) Vpp =4.5V 50 Vg2=2.5V f= 800.2MHz -60 -50 -40 -30 -20 -10 0 10 INPUT POWER Pi (dBmW) 1005TOSHIBA TG2000F $11 $21 Vpp =4.5V Vpp =4.5V VG2=2.5V VG2=2.5V f = 800MHz f= 800MHz R= 3900, R=3900, Ta= 25C / Ta=25C 512 $22 Vpp =4.5V Vpp =4.5V VG2=2.5V VG2=2.5V f = 800MHz f = 800MHz R= 3900, R=3900, Ta= 25C ; Ta= 25C 1006