Advance Technical Information IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 = 500V = 16A 360m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V TO-220AB (IXFP) VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 16 A IDM TC = 25C, Pulse Width Limited by TJM 40 A IA TC = 25C 8 A EAS TC = 25C 300 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 35 V/ns PD TC = 25C 330 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ TL 1.6mm (0.062) from Case for 10s 300 C TSOLD Plastic Body for 10s 260 C FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) 10..65 / 2.2..14.6 1.13 / 10 N/lb. Nm/lb.in. Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g G DS D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = 30V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V 15 A 250 A z 360 m z RDS(on) TJ = 125C VGS = 10V, ID = 0.5 * ID25, Note 1 z z V 5.0 z V Applications z z z (c) 2012 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100456(03/12) IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 * ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 9 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 15 S 2.8 1515 pF 193 pF 7 pF 19 ns 6 ns 44 ns 9 ns Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 10 (External) Qg(on) Qgs 29 nC 7 nC 10 nC VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 1 = Gate 2 = Drain 3 = Source 0.38 C/W RthJC RthCS TO-247 Outline TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 16 A ISM Repetitive, Pulse Width Limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 8A, -di/dt = 100A/s 250 ns C A 0.8 8.7 VR = 100V TO-220 Outline Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 3 - Source 2 - Drain 1 = Gate 2 = Drain 3 = Source 4 = Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 40 16 VGS = 10V 8V 7V 14 VGS = 10V 8V 36 32 12 7V ID - Amperes ID - Amperes 28 6V 10 8 6 24 20 16 6V 12 4 8 5V 2 4 0 5V 0 0 1 2 3 4 5 6 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 16 3.4 VGS = 10V 7V 14 R DS(on) - Normalized 6V 10 8 6 VGS = 10V 3.0 12 ID - Amperes 20 VDS - Volts VDS - Volts 5V 4 2.6 I D = 16A 2.2 I D = 8A 1.8 1.4 1.0 2 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 18 3.8 VGS = 10V 3.4 16 TJ = 125C 14 3.0 12 2.6 ID - Amperes R DS(on) - Normalized -25 VDS - Volts TJ = 25C 2.2 1.8 10 8 6 1.4 4 1.0 2 0.6 0 0 4 8 12 16 20 24 ID - Amperes (c) 2012 IXYS CORPORATION, All Rights Reserved 28 32 36 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 30 20 TJ = - 40C 18 25 16 g f s - Siemens ID - Amperes 14 12 10 TJ = 125C 8 25C 125C 15 10 - 40C 6 25C 20 4 5 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 2 4 6 8 10 12 14 16 18 20 22 ID - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 40 8 35 7 30 6 VDS = 250V VGS - Volts IS - Amperes I D = 8A 25 20 TJ = 125C 15 I G = 10mA 5 4 3 TJ = 25C 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 VSD - Volts 15 20 25 30 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit f = 1 MHz Ciss 25s 1,000 10 100 100s ID - Amperes Capacitance - PicoFarads 10 Coss 1 10 TJ = 150C TC = 25C Single Pulse Crss 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th )JC - C / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_16N50P3(K4)3-23-12