! Fast Switching Speed
! Glass Package Version for High Reliability A B A A
! High Conductance
! Available in Both Through-Hole and Surface B
Mount Versions C
D C
1N914-G DL914-G
Mechanical Data
! Case: DO-35, MiniMELF
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity : Cathode Band
! Weight: DO-35 0.13 grams
MiniMELF 0.05 grams
! Marking: Cathode Band Only
Maximum Ratings @TA=25°C unless otherwise speci f i ed
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Vol tage VRM 100 V
Peak Repetit i ve Reverse Volt age
Worki ng Peak Reverse Voltage
DC Blocki ng Voltage
VRRM
VRWM
VR 75 V
RMS Reverse Volt age VR(RMS) 53 V
Forward Continuous Current (Note 1) IFM 300 mA
Rectifi ed Current (Average), Half W a ve Rectifi cation with
Resisti ve Load and f ≧ 50MHz (Note 1) IO 150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0µs IFSM 1.0
2.0 A
Power Dissipati on (Note 1)
Derate Above 25°C Pd 500
1.68 mW
mW/°C
Thermal Resi stance, Junction to Ambi ent Air (Note 1) RθJA 300
K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +175 °C
1N914-G / DL914-G
FAST SWITCHING DIODE
Data Sheet 4232, Rev. -
Features
SENSITRON
SEMI CONDUCTOR
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - h ttp://www.se nsit ro n.com • E-Mail Address - sales@sensit r on.com •
DO-35
Dim Min Max Min Max
A 25.40 — 1.000 —
B — 4.00 — 0.157
C — 0.60 — 0.024
D — 2.00 — 0.079
in mm In inch
MiniMELF
Dim MIn Max MIn Max
A 3.30 3.70 0.130 0.146
B 1.30 1.60 0.051 0.063
C 0.28 0.50 0.011 0.020
In mm In inch
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Electrical Characteristics @TA=25°C unless otherwise speci f i ed
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage VFM — 1.0 V IF = 10mA
Maxi mum Peak Revers e Current IRM —
5.0
50
30
25
µA
µA
µA
nA
V
R = 75V
V
R = 70V, T j = 150° C
V
R = 20V, T j = 150°C
V
R = 20V
Capacitance Cj — 4.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr — 4.0 ns
I
F = 10mA to IR = 1.0mA
V
R = 6.0V, RL = 100Ω
.
1N914-G / DL914-G
FAST SWITCHING DIODE
Data Sheet 4232, Rev. -
SENSITRON
SEMI CONDUCTOR
Note: 1. Diode on Ceramic Substrate 10mm x 8mm x 0.7mm.
1
10
100
1000
10,000
0 100 200
I , LEAKAGE CURRENT (nA)
R
T , JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
j
V = 20V
R
10
1.0
100
1000
0.1
0.01
01
2
I , INSTANTANE
O
US F
O
RWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
F
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - h ttp://www.se nsit ro n.com • E-Mail Address - sales@sensit r on.com •
Green Products
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - h ttp://www.se nsit ro n.com • E-Mail Address - sales@sensit r on.com •
Data Sheet 4232, Rev. –
SENSITRON
SEMI CONDUCTOR 1N914-G/DL914-G
FAST SWITCHING DIODE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
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