TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B, TL082Y, TL084Y
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUAR Y 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS
77251–1443
Copyright 1992, Texas Instruments Incorporated
1
24 DEVICES COVER COMMERCIAL, INDUSTRIAL, AND MILITARY TEMPERATURE RANGES
•Low-Power Consumption
•Wide Common-Mode and Differential
Voltage Ranges
•Low Input Bias and Offset Currents
•Output Short-Circuit Protection
•Low Total Harmonic
Distortion . . . 0.003% Typ
•High Input Impedance . . . JFET-Input Stage
•Internal Frequency Compensation (Except
TL080, TL080A)
•Latch-Up-Free Operation
•High Slew Rate . . . 13 V/µs Typ
•Common-Mode Input Voltage Range
Includes VCC+
NC–No internal connection
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1 OUT
1 IN–
1 IN+
VCC+
2 IN+
2 IN–
2 OUT
4 OUT
4 IN–
4 IN+
VCC–
3 IN+
3 IN–
3 OUT
TL084, TL084A, TL084B
D, J, N, OR PW PACKAGE
(TOP VIEW)
3212019
910111213
4
5
6
7
8
18
17
16
15
14
4 IN+
NC
VCC–
NC
3 IN+
1 IN+
NC
VCC+
NC
2 IN+
TL084M ...FK PACKAGE
(TOP VIEW)
1 IN–
1 OUT
NC
3 OUT
3 IN– 4 OUT
4 IN–
2 IN–
2 OUT
NC
3212019
910111213
4
5
6
7
8
18
17
16
15
14
NC
VCC+
NC
OUT
NC
NC
IN–
NC
IN+
NC
TL081M . . . FK PACKAGE
(TOP VIEW)
NC
OFFSET N1
NC
OFFSET N2
NC NC
NC
NC
NC
3 2 1 20 19
910111213
4
5
6
7
8
18
17
16
15
14
NC
2 OUT
NC
2 IN–
NC
NC
1 IN–
NC
1 IN+
NC
TL082M ...FK PACKAGE
(TOP VIEW)
NC
1 OUT
NC
2 IN+
NC NC
NC
NC
1
2
3
4
8
7
6
5
N1/COMP
IN–
IN+
VCC–
COMP
VCC+
OUT
OFFSET N2
TL080
D, P, OR PW PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
OFFSET N1
IN–
IN+
VCC–
NC
VCC+
OUT
OFFSET N2
TL081, TL081A, TL081B
D, JG, P, OR PW PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
1 OUT
1 IN–
1 IN+
VCC–
VCC+
2 OUT
2 IN–
2 IN+
TL082, TL082A, TL082B
D, JG, P, OR PW PACKAGE
(TOP VIEW)
VCC–
VCC+
VCC–
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
On products compliant to MIL-STD-883, Class B, all parameters are
tested unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B, TL082Y, TL084Y
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUARY 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS
77251–1443
2
symbols
+
–
+
–
+
–
N1/COMP
COMP
IN+
IN–
OFFSET N2
OUT
TL080
OFFSET N1
IN+
IN– OUT IN+
IN– OUT
TL082 (each amplifier)
TL084 (each amplifier)
TL081
OFFSET N2
description
The TL08_ JFET-input operational amplifier family is designed to offer a wider selection than any previously
developed operational amplifier family. Each of these JFET-input operational amplifiers incorporates
well-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature
high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. Offset
adjustment and external compensation options are available within the TL08_ family.
Device types with a C suffix are characterized for operation from 0°C to 70°C, those with an I suffix are
characterized for operation from –40°C to 85°C, and those with an M suffix are characterized for operation over
the full military temperature range of –55°C to 125°C.
AVAILABLE OPTIONS
T
VIO PACKAGE
CHIP
TA
IO
MAX
at
25°C
SMALL
OUTLINE
(D008)
SMALL
OUTLINE
(D014)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(J)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(N)
PLASTIC
DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
0°C
15 mV
15 mV
6 mV
3 mV
TL080CD
TL081CD
TL081ACD
TL081BCD
— — — — —
TL080CP
TL081CP
TL081ACP
TL081BCP
TL080CPW
TL081CPW —
0°C
to
70°C
15 mV
6 mV
3 mV
TL082CD
TL082ACD
TL082BCD — — — — — TL082CP
TL082ACP
TL082BCP
TL082CPW TL082Y
15 mV
6 mV
3 mV —TL084CD
TL084ACD
TL084BCD — — — TL084CN
TL084ACN
TL084BCN —TL084CPW TL084Y
–40°C
to
85°C
6 mV
6 mV
6 mV
TL081ID
TL082ID
TL084ID TL084ID — — — TL084IN
TL081IP
TL082IP — —
–55°C
to
125°C
6 mV
6 mV
9 mV — — TL081MFK
TL082MFK
TL084MFK TL084MJ
TL081MJG
TL082MJG — — — —
The D package is available taped and reeled. Add R suffix to device type, (e.g., TL080CDR).
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUAR Y 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS
77251–1443
3
schematic (each amplifier)
C1
VCC+
IN+
OFFSET N2
COMP
VCC–
OFFSET N1
1080 Ω 1080 Ω
N1/COMP
IN–
TL081 Only
64 Ω
128 Ω
64 Ω
OUT
Only
TL080
C1 = 18 pF on TL081, TL082, and TL084 only (including their suffix versions).
Component values shown are nominal.
OFFSET N2
TL082Y
JFET-INPUT DUAL OPERATIONAL AMPLIFIER
SLOS081A–D2297, FEBRUARY 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS
77251–1443
4
chip information
These chips, when properly assembled, display characteristics similar to the TL082. Thermal compression or
ultrasonic bonding may be used on the doped aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%
ALL DIMENSIONS ARE IN MILS
PIN (4) INTERNALLY CONNECTED
TO BACKSIDE OF CHIP
+
–2 OUT
1 IN+
1 IN–
VCC+
(8)
(6)
(3)
(2)
(5)
(1)
–
+
(7) 2 IN+
2 IN–
1 OUT
(4)
VCC–
TL084Y
JFET-INPUT QUAD OPERATIONAL AMPLIFIER
SLOS081A–D2297, FEBRUAR Y 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS
77251–1443
5
chip information
These chips, when properly assembled, display characteristics similar to the TL084. Thermal compression or
ultrasonic bonding may be used on the doped aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%
ALL DIMENSIONS ARE IN MILS
PIN (11) INTERNALLY CONNECTED
TO BACKSIDE OF CHIP
+
–1 OUT
1 IN+
1 IN–
VCC+
(4)
(6)
(3)
(2)
(5)
(1)
–
+
(7) 2 IN+
2 IN–
2 OUT
(11)
VCC–
+
–3 OUT
3 IN+
3 IN–
(13)
(10)
(9)
(12)
(8)
–
+
(14)
4 OUT 4 IN+
4 IN–
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUARY 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS
77251–1443
6
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
TL08_C
TL08_AC
TL08_BC TL08_I TL08_M UNIT
Supply voltage, VCC+ (see Note 1) 18 18 18 V
Supply voltage VCC– (see Note 1) –18 –18 –18 V
Differential input voltage (see Note 2) ±30 ±30 ±30 V
Input voltage (see Notes 1 and 3) ±15 ±15 ±15 V
Duration of output short circuit (see Note 4) unlimited unlimited unlimited
Continuous total dissipation See Dissipation Rating Table
Operating free-air temperature range 0 to 70 – 40 to 85 – 55 to 125 °C
Storage temperature range – 65 to 150 – 65 to 150 – 65 to 150 °C
Case temperature for 60 seconds FK package 260 °C
Lead temperature 1,6 mm (1/16 inch)
from case for 60 seconds J or JG package 300 °C
Lead temperature 1,6 mm (1/16 inch)
from case for 10 seconds D, N, P, or PW package 260 260 °C
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–.
2. Differential voltages are at the noninverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.
4. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGE TA ≤ 25°C
POWER RATING DERATING
FACTOR DERATE
ABOVE TATA = 70°C
POWER RATING TA = 85°C
POWER RATING TA = 125°C
POWER RATING
D (8 Pin) 680 mW 5.8 mW/°C 32°C 464 mW 377 mW N/A
D (14 Pin) 680 mW 7.6 mW/ °C60°C 608 mW 494 mW N/A
FK 680 mW 11.0 mW/°C88°C 680 mW 680 mW 275 mW
J 680 mW 11.0 mW/°C88°C 680 mW 680 mW 275 mW
JG 680 mW 8.4 mW/°C69°C 672 mW 546 mW 210 mW
N 680 mW 9.2 mW/°C76°C 680 mW 598 mW N/A
P 680 mW 8.0 mW/°C65°C 640 mW 520 mW N/A
PW (8 Pin) 525 mW 4.2 mW/°C25°C 336 mW N/A N/A
PW (14 Pin) 700 mW 5.6 mW/°C 25°C 448 mW N/A N/A
TL080, TL081, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUARY 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 1443 HOUSTON, TEXAS 77001POST OFFICE BOX 655303 DALLAS, TEXAS 75265
•• 7
electrical characteristics, VCC± = ±15 V (unless otherwise noted)
PARAMETER TEST CONDITIONS
†
TL080C
TL081C
TL082C
TL084C
TL081AC
TL082AC
TL084AC
TLO81BC
TL082BC
TL084BC
TL081I
TL082I
TL084I UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
VIO
Input offset voltage
VO = 0,TA = 25°C 3 15 3 6 2 3 3 6
mV
V
IO
Input
offset
voltage
RS = 50 Ω TA = full range 20 7.5 5 9
mV
αVIO Temperature coefficient
of input offset voltage VO = 0,
TA = full range RS = 50 Ω,18 18 18 18 µV/°C
IIO
Input offset current‡
VO=0
TA = 25°C 5 200 5 100 5 100 5 100 pA
I
IO
Input
offset
current‡
V
O =
0
TA = full range 2 2 2 10 nA
IIB
Input bias current‡
VO=0
TA = 25°C 30 400 30 200 30 200 30 200 pA
I
IB
Input
bias
current‡
V
O =
0
TA = full range 10 7 7 20 nA
VICR Common-mode
input voltage range TA = 25°C±11 –12
to
15 ±11 –12
to
15 ±11 –12
to
15 ±11 –12
to
15 V
V
TA = 25°C RL = 10 kΩ±12 ±13.5 ±12 ±13.5 ±12 ±13.5 ±12 ±13.5
V
VOM
M
ax
i
mum pea
k
output voltage swing
TA= full range
RL ≥ 10 kΩ±12 ±12 ±12 ±12 V
OM
output
voltage
swing
T
A =
full
range
RL ≥ 2 kΩ±10 ±12 ±10 ±12 ±10 ±12 ±10 ±12
AVD
Large-signal differential VO = ±10 V,
TA = 25°CRL ≥ 2 k Ω, 25 200 50 200 50 200 50 200
V/mV
A
VD
gg
voltage amplification VO = ±10 V,
TA = full range RL ≥2 kΩ,15 25 25 25
V/mV
B1Unity-gain bandwidth T A = 25°C 3 3 3 3 MHz
riInput resistance TA = 25°C 1012 1012 1012 1012 Ω
CMRR
Common-mode VIC = VICR min, VO = 0,
70
86
80
86
80
86
80
86
dB
CMRR
rejection ratio RS = 50 Ω,TA = 25°C
70
86
80
86
80
86
80
86
dB
kSVR
Supply voltage rejection VCC = ±15 V to ±9 V, VO = 0,
70
86
80
86
80
86
80
86
dB
k
SVR
pp y g j
ratio (∆VCC±/∆VIO)RS = 50 Ω,TA = 25°C
70
86
80
86
80
86
80
86
dB
ICC Supply current
(per amplifier) No load,
TA = 25°CVO = 0, 1.4 2.8 1.4 2.8 1.4 2.8 1.4 2.8 mA
V01/V02 Crosstalk attenuation AVD = 100, TA = 25°C 120 120 120 120 dB
†All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified. Full range for TA is 0°C to 70°C for TL08_C, TL08_AC,
TL08_BC and –40°C to 85°C for TL08_I.
‡Input bias currents of a FET -input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in Figure 18. Pulse techniques must be used
that will maintain the junction temperature as close to the ambient temperature as possible.
TL081M, TL082M, TL084M
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUARY 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
8
electrical characteristics, VCC ±= ±15 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS†
TL081M, TL082M TL084M
UNIT
PARAMETER
TEST
CONDITIONS†
MIN TYP MAX MIN TYP MAX
UNIT
VIO
Input offset voltage
VO=0 R
S=50Ω
TA = 25°C 3 6 3 9
mV
V
IO
I
npu
t
o
ff
se
t
vo
lt
age
V
O =
0
,
R
S =
50
Ω
TA = –55°C to 125°C 9 15 m
V
αVIO Temperature
coefficient of input
offset voltage
VO = 0,
TA = –55°C to 125°CRS= 50 Ω,18 18 µV/°C
IIO
Input offset current‡
VO=0
TA = 25°C 5 100 5 100 pA
I
IO
I
npu
t
o
ff
se
t
curren
t‡
V
O =
0
TA = 125°C 20 20 nA
IIB
Input bias current‡
VO=0
TA = 25°C 30 200 30 200 pA
I
IB
I
npu
t
bi
as curren
t‡
V
O =
0
TA = 125°C 50 50 nA
VICR Common-mode
input voltage range TA = 25°C±11 ±12
to
15 ±11 ±12
to
15 V
V
Maximum peak TA = 25°C, RL = 10 kΩ±12 ±13.5 ±12 ±13.5
V
VOM
Maximum peak
output voltage
i
TA=–55
°
Cto125
°
C
RL ≥ 10 kΩ±12 ±12 V
OM
swing
T
A = –
55°C
t
o
125°C
RL ≥ 2 kΩ±10 ±12 ±10 ±12
AVD
Large-signal
differential voltage
VO = ±10 V,
TA = 25°CRL ≥ 2 kΩ, 25 200 25 200
V/mV
A
VD
diff
eren
ti
a
l
vo
lt
age
amplification VO = ±10 V,
TA = –55°C to 125°CRL ≥ 2 kΩ,15 15
V/
m
V
B1Unity-gain
bandwidth TA = 25°C 3 3 MHz
riInput resistance T A = 25°C 1012 1012 Ω
CMRR Common-mode
rejection ratio VIC = VICR min,
RS = 50 Ω, VO = 0,
TA = 25°C80 86 80 86 dB
kSVR Supply voltage
rejection ratio
(∆VCC±/∆VIO)
VCC = ±15 V to ±9 V,
RS = 50 Ω,VO = 0,
TA = 25°C80 86 80 86 dB
ICC Supply current
(per amplifier) No load, VO = 0, TA = 25°C 1.4 2.8 1.4 2.8 mA
V01/V02 Crosstalk
attenuation AVD = 100, TA = 25°C 120 120 dB
†All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified.
‡Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in
Figure 18. Pulse techniques must be used that will maintain the junction temperatures as close to the ambient temperature as is possible.
operating characteristics, VCC± = ±15 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SR
Slew rate at unity gain
VI = 10 V,
CL = 100 pF, RL = 2 kΩ,
See Figure 1 8∗13
V/µs
SR
Sl
ew ra
t
e a
t
un
it
y ga
i
nVI = 10 V, RL = 2 kΩ,
TA = – 55°C to 125°C, CL = 100 pF,
See Figure 1 5∗
V/
µs
trRise time VI = 20 mV, RL = 2 kΩ,0.05 µs
Overshoot factor CL = 100 pF, See Figure 1 20%
Vn
Equivalent input noise voltage
RS= 100 Ω
f = 1 kHz 18 nV/√Hz
V
n
E
qu
i
va
l
en
t
i
npu
t
no
i
se vo
lt
age
R
S =
100
Ω
f = 10 Hz to 10 kHz 4 µV
InEquivalent input noise current RS = 100 Ω,f = 1 kHz 0.01 pA/√Hz
THD Total harmonic distortion VO(rms) = 10 V,
f = 1 kHz RS ≤ 1 kΩ, RL ≥ 2 kΩ,0.003%
∗On products compliant to MIL-STD-883, Class B, this parameter is not production tested.
TL080, TL081, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUAR Y 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001 9
TL082Y, TL084Y electrical characteristics, VCC± = ±15 V (unless otherwise noted)
PARAMETER TEST CONDITIONS†MIN TYP MAX UNIT
VIO Input offset voltage VO = 0,RS = 50 Ω,TA = 25°C 3 15 mV
αVIO Temperature coef ficient of input of fset voltage VO = 0, RS = 50 Ω, TA = 25°C 18 µV/°C
IIO Input offset current‡VO = 0, TA = 25°C 5 200 pA
IIB Input bias current‡VO = 0, TA = 25°C 30 400 pA
VICR Common-mode input voltage range TA = 25°C±11 –12
to
15 V
VOM Maximum peak output voltage swing TA = 25°C, RL = 10 kΩ±12 ±13.5 V
AVD Large-signal differential voltage amplification VO = ±10 V, TA = 25°C, RL ≥ 2 kΩ25 200 V/mV
B1Unity-gain bandwidth TA = 25°C 3 MHz
riInput resistance TA = 25°C 1012 Ω
CMRR
Common
-
mode rejection ratio
VIC = VICR min, VO = 0,
70
86
dB
CMRR
Common
-
mode
rejection
ratio
RS = 50 Ω, TA = 25°C
70
86
dB
kSVR
Supply voltage rejection ratio (∆VCC±/∆VIO)
VCC = ±15 V to ±9 V, VO = 0,
70
86
dB
k
SVR
Supply
voltage
rejection
ratio
(∆V
CC±
/∆V
IO
)
RS = 50 Ω, TA = 25°C
70
86
dB
ICC Supply current (per amplifier) No load, VO = 0, TA = 25°C 1.4 2.8 mA
V01/V02 Crosstalk attenuation AVD = 100, TA = 25°C 120 dB
†All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified.
‡Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in
Figure 18. Pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible.
operating characteristics, VCC± = ±15 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SR Slew rate at unity gain VI = 10 V,
CL = 100 pF, RL = 2 kΩ,
See Figure 1 8 13 V/µs
trRise time VI = 20 mV, RL = 2 kΩ,0.05 µs
Overshoot factor CL = 100 pF, See Figure 1 20%
Vn
Equivalent input noise voltage
RS= 100 Ω
f = 1 kHz 18 nV/√Hz
V
n
E
qu
i
va
l
en
t
i
npu
t
no
i
se vo
lt
age
R
S =
100
Ω
f = 10 Hz to 10 kHz 4 µV
InEquivalent input noise current RS = 100 Ω,f = 1 kHz 0.01 pA/√Hz
THD Total harmonic distortion VO(rms) = 10 V,
f = 1 kHz RS ≤ 1 kΩ, RL ≥ 2 kΩ,0.003%
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B, TL082Y, TL084Y
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUARY 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
10
PARAMETER MEASUREMENT INFORMATION
VI
VICL =
100 pF
RL = 2 kΩ
CC = 18 pF
for TL080
10 kΩ
1 kΩ
RLCL = 100 pF
100 kΩ
C2
C1
N1
500 pF
TL080
+
–
+
–
+
–
Figure 1. Unity-Gain Amplifier Figure 2. Gain-of-10
Inverting Amplifier Figure 3. Feed-Forward
Compensation
2 MΩ
N2 CC
COMP
TL080
1 MΩ
VCC+
TL081
N2
N1
100 kΩ
1.5 kΩ
VCC–
N1
+
–
+
–
Figure 4. TL080 Input Offset Voltage Figure 5. TL081 Input Offset Voltage
Null Circuit Null Circuit
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUAR Y 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001 11
TYPICAL CHARACTERISTICS†
MAXIMUM PEAK OUTPUT VOLTAGE
vs
FREQUENCY
±15
±12.5
±10
±7.5
±5
±2.5
0
f – Frequency – Hz
100 1 k 10 k 100 k 1 M 10 M
RL = 10 kΩ
TA = 25°C
See Figure 2
VCC± = ±15 V
VCC± = ±10 V
VCC± = ±5 V
– Maximum Peak Output Voltage – V
MAXIMUM PEAK OUTPUT VOLTAGE
vs
FREQUENCY
VCC± = ±5 V
VCC± = ±10 V
VCC± = ±15 V
RL = 2 kΩ
TA = 25°C
±15
±12.5
±10
±7.5
±5
±2.5
0
f – Frequency – Hz
100 1 k 10 k 1 M 10 M
See Figure 2
100 k
VOM
– Maximum Peak Output Voltage – V
VOM
Figure 6 Figure 7
0
±2.5
±5
±7.5
±10
±12.5
±15
10 k 40 k 100 k 400 k 1 M 4 M 10 M
VCC± = ±15 V
RL = 2 kΩ
See Figure 2
TA = –55°C
TA = 25°C
TA = 125°C
f – Frequency – Hz
MAXIMUM PEAK OUTPUT VOLTAGE ‡
vs
FREQUENCY
±12.5
±10
±7.5
±5
±2.5
MAXIMUM PEAK OUTPUT VOLTAGE §
vs
FREE-AIR TEMPERATURE
– 75 – 50 – 25 0 25 50 75 100 125
±15
0
ÎÎÎÎ
ÎÎÎÎ
RL = 10 kΩ
ÎÎÎÎ
RL = 2 kΩ
VCC±= ±15 V
See Figure 2
– Maximum Peak Output Voltage – V
VOM
– Maximum Peak Output Voltage – V
VOM
TA – Free-Air Temperature – °C
Figure 8 Figure 9
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. A 12-pF
compensation capacitor is used with TL080.
‡The –55°C curve and the 125°C curve apply only to the M version.
§The temperature range of the C version is 0°C to 75°C, the I version is –40°C to 85°C, and the M version is –55°C to 125°C.
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUARY 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
12
TYPICAL CHARACTERISTICS†
0
0
|VCC±| – Supply Voltage – V 16
±15
2 4 6 8 10 12 14
±2.5
±5
±7.5
±10
±12.5
RL = 10 kΩ
TA = 25°C
0.1
0
RL – Load Resistance – kΩ10
±15
±2.5
±5
±7.5
±10
±12.5
VCC± = ±15 V
TA = 25°C
See Figure 2
0.2 0.4 0.7 1 2 4 7
MAXIMUM PEAK OUTPUT VOLTAGE
vs
LOAD RESISTANCE
MAXIMUM PEAK OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
– Maximum Peak Output Voltage – V
VOM
– Maximum Peak Output Voltage – V
VOM
Figure 10 Figure 11
180°
135°
90°
45°
0°
700
70
7
–75
1
TA – Free-Air Temperature – °C
125
1000
–50 –25 0 25 50 75 100
2
4
10
20
40
100
200
400
VCC± = ±15 V
VO = ±10 V
RL = 2 kΩ
Phase Shift
(right scale)
TA = 25°C
RL = 10 kΩ
VCC± = ±5 V to ±15 V
Differential
Voltage
Amplification
(left scale)
105
104
103
102
101
1 M100 k10 k1 k10010
106
10 M
f – Frequency – Hz
11
LARGE-SIGNAL‡
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREQUENCY
– Differential Voltage Amplification – V/mVAVD
Phase Shift
– Differential Voltage Amplification – V/mVAVD
Figure 12 Figure 13
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. A 12-pF
compensation capacitor is used with TL080.
‡The temperature range of the C version is 0°C to 75°C, the I version is –40°C to 85°C, and the M version is –55°C to 125°C.
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUAR Y 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001 13
TYPICAL CHARACTERISTICS†
–75
0
– Total Power Dissipated – mW
TA – Free-Air Temperature – °C125
250
–50 –25 0 25 50 75 100
25
50
75
100
125
150
175
200
225 VCC± = ±15 V
No Signal
No Load
TL084, TL085
TL082, TL083
TL080, TL081
See Figure 3
TA = 25°C
C2 = 3 pF
VCC± = ±15 V
105
104
103
102
10
1 M100 k10 k1 k
106
10 M
f – Frequency – Hz
1100
TL080
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREQUENCY WITH FEED-FORWARD COMPENSATION
TOTAL POWER DISSIPATED‡
vs
FREE-AIR TEMPERATURE
– Differential Voltage Amplification – V/mVAVD
PD
Figure 14 Figure 15
0
0
– Supply Current – mA
|VCC±| – Supply Voltage – V 16
2.0
2 4 6 8 10 12 14
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 TA = 25°C
No Signal
No Load
–75
0
TA – Free-Air Temperature –°C125
2.0
–50 –25 0 25 50 75 100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 VCC± = ±15 V
No Signal
No Load
SUPPLY CURRENT PER AMPLIFIER‡
vs
FREE-AIR TEMPERATURE
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
ICC ±
– Supply Current – mAICC ±
Figure 16 Figure 17
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. A 12-pF
compensation capacitor is used with TL080.
‡The temperature range of the C version is 0°C to 75°C, the I version is –40°C to 85°C, and the M version is –55°C to 125°C.
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUARY 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
14
TYPICAL CHARACTERISTICS†
CL = 100 pF
TA = 25°C
RL = 2 kΩ
VCC± = ±15 V
Output
4
2
0
– 2
– 4
32.521.510.50
6
3.5
t – Time – µs
Input and Output Voltages – V
– 6
– 50
0.01
– Input Bias Current – nA
TA – Free-Air Temperature –°C125
100
– 25 0 25 50 75 100
0.1
1
10
VCC± = ±15 V
INPUT BIAS CURRENT‡
vs
FREE-AIR TEMPERATURE VOLTAGE-FOLLOWER
LARGE-SIGNAL PULSE RESPONSE
Input
IIB
Figure 18 Figure 19
– 4
– Output Voltage – mV
t – Time – µs1.2
28
0 0.2 0.4 0.6 0.8 1.0
0
4
8
12
16
20
24
VCC± = ±15 V
RL = 2 kΩ
CL = 100 pF
TA = 25°C
See Figure 1
OUTPUT VOLTAGE
vs
ELAPSED TIME
VO
Figure 20
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. A 12-pF
compensation capacitor is used with TL080.
‡The temperature range of the C version is 0°C to 75°C, the I version is –40°C to 85°C, and the M version is –55°C to 125°C.
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUAR Y 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001 15
TYPICAL CHARACTERISTICS†
10
0
– Equilvalent Input Noise Voltage –
f – Frequency – Hz
100 k
50
10
20
30
40
VCC± = ±15 V
AVD = 10
RS = 100 Ω
TA = 25°C
40 100 400 1 k 4 k 10 k 40 k
RL = 10 kΩ
VCC± = ±15 V
88
87
86
85
84
1007550250– 25– 50
89
125
TA – Free-Air Temperature – °C
CMRR – Common-Mode Rejection Ratio – dB
83
– 75
COMMON-MODE REJECTION RATIO‡
vs
FREE-AIR TEMPERATURE
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
VnnV/ Hz
Figure 21 Figure 22
0.001
THD – Total Harmonic Distortion – %
1VCC± = ±15 V
AVD = 1
VI(RMS) = 6 V
TA = 25°C
40 k10 k4 k1 k400 100 k
f – Frequency – Hz
10
0.004
0.01
0.04
0.1
0.4
TOTAL HARMONIC DISTORTION
vs
FREQUENCY
Figure 23
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. A 12-pF
compensation capacitor is used with TL080.
‡The temperature range of the C version is 0°C to 75°C, the I version is –40°C to 85°C, and the M version is –55°C to 125°C.
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUARY 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
16
TYPICAL APPLICATION DATA
+
–
+
–
–15 V
+15 V Output
1 kΩ
9.1 kΩ
3.3 kΩ
CF = 3.3 µF
RF = 100 kΩ
3.3 kΩR1
C1 C2
R3
C3 VCC–
VCC+
TL081 OutputInput
TL081
R2
R1 = R2 = 2(R3) = 1.5 MΩ
fo = 2π R1 C1
1= 1 kHz
f = 2π RF CF
1
C1 = C2 = = 110 pF
C3
2
Figure 24. 0.5-Hz Square-Wave Oscillator Figure 25. High-Q Notch Filter
Input
–
+
+
–
TL084 Output C
VCC+
VCC+
Output BTL084
–
+
VCC+
Output ATL084
–
+
VCC+
TL084
VCC+
100 kΩ
100 µF
1 µF
1 MΩ
100 kΩ
100 kΩ100 kΩ
Figure 26. Audio Distribution Amplifier
+
–
+
–
88.4 kΩ
18 pF
VCC+
VCC–
18 pF
18 pF
88.4 kΩ
88.4 kΩ
1N4148
1N4148
VCC–
VCC+
1 kΩ
– 15 V
6 cos ωt
15 V
18 kΩ
(see Note A)
1 kΩ
6 sin ωt
1/2
TL082 1/2
TL082
18 kΩ
(see Note A)
NOTE A: These resistor values may be adjusted for a symmetrical output.
Figure 27. 100-KHz Quadrature Oscillator
TL080, TL081, TL082, TL084, TL081A, TL082A, TL084A
TL081B, TL082B, TL084B
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081A–D2297, FEBRUAR Y 1977–REVISED NOVEMBER 1992
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001 17
TYPICAL APPLICATION DATA
1/41/4
Output BOutput A
+
–
1.5 kΩVCC–
43 kΩ
220 pF
43 kΩ
VCC+
30 kΩ
VCC+ 43 kΩ
VCC–
+
–
16 kΩ
43 kΩ
Input 220 pF 220 pF
16 kΩ
+
–
VCC–
VCC+
30 kΩ
VCC+
43 kΩ
220 pF
43 kΩ
VCC–
+
–
1.5 kΩ
1/4
TL084 TL084
1/4
TL084 TL084
2 kHz/div
Second-Order Bandpass Filter
fo = 100 kHz, Q = 30, GAIN = 4
2 kHz/div
Cascaded Bandpass Filter
fo = 100 kHz, Q = 69, GAIN = 16
Output A
Output
B
Figure 28. Positive-Feedback Bandpass Filter
Rext
100 Ω
+
–
Balance
75 µF50 pF
47 kΩ10 pF
TL080
27 kΩ
1 µF
0.01 µF
0.00375 µF
220 kΩ
VCC+
VCC– VCC–
VCC+
TL080
10 pF
+
–
5 kΩ
Gain 47 µF
+
0.03 µF
10 kΩ
10 kΩ
0.03 µF
10 kΩ3.3 kΩ
0.003 µF
0.003 µF
MAX
Treble
100 kΩ
MIN
68 kΩ
Output
Input
100 Ω
+
MIN
100 kΩ
Bass
MAX
Figure 29. IC Preamplifier
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
18
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor
product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each
device is not necessarily performed, except those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or
severe property or environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED
TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI
products in such applications requires the written approval of an appropriate TI officer. Questions concerning
potential risk applications should be directed to TI through a local SC sales office.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards should be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or
infringement of patents or services described herein. Nor does TI warrant or represent that any license, either
express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property
right of TI covering or relating to any combination, machine, or process in which such semiconductor products
or services might be or are used.
Copyright 1995, Texas Instruments Incorporated