Features * * * * * High-power-added Efficient Power Amplifier (Pout Typically 29 dBm) Controlled Output Power Low-noise Preamplifier (NF Typically 1.5 dB) Few External Components PSSO20 Plastic Package with Down-set Paddle UHF SiGe Front-end IC ATR0981 Electrostatic sensitive device. Observe precautions for handling. Preliminary 1. Description The ATR0981 is a monolithic IC manufactured using Atmel's advanced SiGe technology. The IC performs a transmit and receive front-end function, dedicated for a frequency range of 300 MHz to 500 MHz. It consists of a Low-Noise Amplifier (LNA) and a Power Amplifier (PA) with good Power-added Efficiency (PAE). Figure 1-1. Block Diagram 20 19 18 17 16 15 14 13 12 11 BIAS BIAS 1 2 3 4 5 6 7 8 9 10 Rev. 4862A-SIGE-09/05 2. Pin Configuration Figure 2-1. Pinning PSSO20 with Down Set Paddle V3_PA_OUT V3_PA_OUT V3_PA_OUT GND4 GND3 NC GND2 LNA_IN GND1 BIAS_LNA Table 2-1. 2 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 GND5 V2_PA GND6 POUT_CONTROL GND3 PA_IN GND4 LNA_OUT GND5 VS_CTRL Pin Description Pin Symbol Function 1 V3_PA_OUT Matching network for power amplifier output 2 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 3 V3_PA_OUT 4 GND4 Ground 5 GND3 Ground 6 NC Inductor to power supply and matching network for power amplifier output Not connected 7 GND2 8 LNA_IN Ground 9 GND1 10 BIAS_LNA Resistor to VS sets the LNA current 11 VS_CTRL Supply voltage for control of power amplifier 12 GND5 13 LNA_OUT 14 GND4 Ground 15 PA_IN Power amplifier input 16 GND3 Ground 17 POUT_CONTROL 18 GND6 Ground 19 V2_PA Supply voltage for power amplifier 20 GND5 Ground Low-noise amplifier input Ground Ground Low-noise amplifier output and supply voltage Power amplifier control input ATR0981 [Preliminary] 4862A-SIGE-09/05 ATR0981 [Preliminary] 3. Absolute Maximum Ratings All voltages are referred to GND (Pins 7, 9, 16, 18, 20, Slug) Parameters Symbol Min. Max. Unit VS_PA 5 V VS_LNA 2.8 V PA control voltage, TX, pin 17 VCNTL 5 V Junction temperature Tjmax 150 C Supply voltage PA, TX, pins 1, 2, 3, 11, 19 Supply voltage LNA, RX, pin 13 Storage temperature TStg +125 C Electrostatic handling HMB, all RF pins VESD 200 V Electrostatic handling HMB, all control pins VESD 2 kV -55 4. Operating Range All voltages are referred to GND (Pins 7, 9, 16, 18, 20, Slug). The following table represents the sum of all supply currents into the mentioned pins. Parameters Test Conditions/Pins Symbol Min. Typ. Max. Unit Supply voltage PA TX, pins 1, 2, 3, 11, 19 VS_PA 3.0 3.6 4.5 V Supply voltage LNA RX, pin 13 VS_LNA 2.4 2.5 2.6 V Supply current PA TX, pins 1, 2, 3, 11, 19 Supply current LNA Pins 10, 13 Ambient temperature IS_PA 400 mA IS_LNA 2.5 mA Tamb -30 +25 +60 C 5. Thermal Resistance Parameters Junction ambient Symbol Value Unit RthJA 19 K/W 3 4862A-SIGE-09/05 6. Electrical Characteristics Test conditions (unless otherwise specified) : VS_PA = 3.6V, Tamb = 25 C. Parameters Test Conditions/Pins Symbol Min. Typ. Max. Unit Supply voltage TX, pins 1, 2, 3, 11, 19 VS_PA 3.0 3.6 4.5 V Supply current TX, pins 1, 2, 3, 11, 19 IS_PA 400 550 mA 500 MHz Power Amplifier(1) Frequency range TX Power gain TX, pin 15 to pins 1, 2, 3 Output power control range TX Control voltage f 300 Gp 30 Pout 1 TX, output power (maximum), pin 17 34 2.0 TX, output power (minimum), pin 17 dB 3 dB 2.5 V 400 A 20 A 0.7 Pin 17 Shut down mode Control voltage 0.1V, pins 1, 2, 3, 11, 19 Power added efficiency TX at 466 MHz PAE 50 Saturated output power TX, input power 3 dBm Psat 27.5 TX, input power 3 dBm 2 fo -20 dBc TX, input power 3 dBm 3 fo -20 dBc Harmonics 0 V Control current IS_PA 10 55 29 % 30.5 dBm Low-noise Amplifier Supply voltage RX, pins 10, 13 VS_LNA Supply current RX, pins 10, 13 IS_LNA Frequency range RX 2.4 f 300 17.5 2.5 2.6 V 2.5 3.5 mA 500 MHz RX at R1 = 5.6 k, IS = 2.5 mA Gp 19 20.5 dB RX at R1 = 5.6 k, IS = 2.5 mA NF 1.5 2.0 dB Isolation RX at R1 = 5.6 k, IS = 2.5 mA ISO 20 dB Third-order input interception point RX at R1 = 5.6 k, IS = 2.5 mA IIP3 -10 dBm Power gain Noise figure Notes: (2) -13 1. Power amplifier should be unconditionally stable, maximum duty cycle 100%, true cw operation, maximum load mismatch 10:1 for 5s at 3.6V 2. Ensured by design 4 ATR0981 [Preliminary] 4862A-SIGE-09/05 ATR0981 [Preliminary] 7. Typical Characteristics Figure 7-1. Power Sweep 70.0 60.0 PAE PAE (%) Pout (dBm) Gain (dB) 50.0 40.0 30.0 Pout 20.0 Gain 10.0 0.0 -10.0 -20.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 Pin (dBm) Figure 7-2. Ramp Sweep 70 60 PAE 50 PAE (%) Pout (dBm) 40 30 Pout 20 10 0 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 Vramp (V) Figure 7-3. VCC Sweep 70.0 60.0 PAE PAE (%) Pout (dBm) 50.0 40.0 30.0 Pout 20.0 10.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 VCC (V) 5 4862A-SIGE-09/05 8. Application Circuit Figure 8-1. Typical Application Circuit POUT_CONTROL PA_IN LNA_OUT C4 L1 VS_PA C2 C1 C5 L2 C6 L3 R2 VS_LNA C3 C7 20 19 18 17 16 15 14 13 12 VS_PA 11 BIAS BIAS C8 1 2 3 4 5 6 7 8 9 10 L4 C13 L5 VS_PA R1 L8 C9 L6 C14 C10 C11 LNA_IN VS_LNA PA_OUT 6 ATR0981 [Preliminary] 4862A-SIGE-09/05 ATR0981 [Preliminary] Table 8-1. Bill of Materials for 460 MHz Applications Part No. Description Part Value Package Vendor C1 Capacitor 1 nF 0603 Standard C2, C3, C7, C9, C11, C13 Capacitor 100 pf 0603 Standard C4 Capacitor n.c. 0603 Standard C5 Capacitor 3.9 pF 0603 Standard C6 Capacitor 220 pF 0603 Standard C8 Capacitor 2.7 pF 0604 Standard C10 Capacitor 12 pF 0603 Standard C14 Capacitor 8.2 pF 0603 Standard L1 Inductor 1.5 nH 0805 Standard L2 Inductor 39 nH 0805 Standard L3, L5, L8 Inductor 22 nH 0805 Standard L4 Inductor 6.8 nH 0805 Standard L6 Inductor 3.9 nH 0805 Standard R2 Resistor 0 0603 Standard 9. Ordering Information Extended Type Number Package Remarks ATR0981-TRUY PSSO20 Tube ATR0981-TRHY PSSO20 Taped and reeled 7 4862A-SIGE-09/05 10. Package Information 3.1 0.4 A B Package: PSS020 Dimensions in mm 4 6.75 max. 6.450.15 6.7 max. 4.40.1 0.15 A C 0.25 0.12 0.575 0.18 max. 0.05+0.09 1.3 B 5.40.2 (20x) 0.65 5.85 20 A 11 technical drawings according to DIN specifications 1 10 Drawing-No.: 6.543-5071.01-4 Issue: 1; 23.08.00 8 ATR0981 [Preliminary] 4862A-SIGE-09/05 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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