121
GaAlAs Infrared Emitting Diodes
Long T-1 (3 mm) Plastic Package — 880 nm VTE3372LA, 74LA
PACKAGE DIMENSIONS inch (mm)
CA SE 50A Long T-1 (3 mm )
CHIP SIZE: .011" x .011"
DESCRIPTION
Th is nar row be am an gl e 3 m m d iame ter pla st ic p ackag ed emit ter i s sui tabl e for u se i n op tic al swi tch ap pli ca tion s. It co nt ains a smal l
area, GaAlAs, 880 nm, high efficiency IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: - 40°C to 100°C
Continuous Power Dissipation: 100 mW
Derate above 30°C: 1.43 mW/°C
Maximum Continuous Current: 50 mA
Derate above 30°C: 0.71 mA/°C
Peak Forward Current, 10 µs, 100 pps: 2.5 A
Temp. Coefficient of Power Output (Typ.) : - .8%/°C
Maximum Re verse Voltage: 5.0V
Maximum Re verse Current @ V
R
= 5V: 10 µA
Peak Wavelength (Typical): 880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): 14 pF
Response Time @ I
F
= 20 mA
Rise:1.0 µs Fall: 1.0 µs
Lead Soldering Te mperature: 260°C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPT ICAL CHARACT ERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Refer to General Product Notes, page 2.
Part Number
Output Forwar d Drop Half Power Beam
Angle
Irradiance Radiant
Intensity Total Power Test
Current VF
EeCondition IePOIFT @ IFT θ1/2
mW/cm2distance Diameter mW/sr mW mA
(Pulsed) Volts Typ.
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE3372LA 2.0 2.6 10.16 2.1 2.0 3.0 20 1.3 1.8 ±10°
VTE3374LA 4.0 5.2 10.16 2.1 4.1 5.0 20 1.3 1.8 ±10°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www .perkinelmer.com/opto
