© IXYS All rights reserved 1 - 2
20070807
VUO 36
IXYS reserves the right to change limits, test conditions and dimensions.
IdAV = 35 A
VRRM = 800-1800 V
Three Phase Rectifier Bridge
Features
• Package with ¼" fast-on terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature & power cycling
Symbol Conditions Maximum Ratings
IdAV
IdAVM
TC = 85°C, module
TC = 62°C, module
27
35
A
A
IFSM TVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
550
600
A
A
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
500
550
A
A
I2tTVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
1520
1520
A2s
A2s
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
1250
1250
A2s
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL < 1 mA t = 1 s
2500
3000
V~
V~
MdMounting torque (M5)
(10-32 UNF)
2 ±10%
18 ±10%
Nm
lb.in.
Weight Typ. 22 g
VRSM VRRM Type
VDSM VDRM
V V
800 900 VUO 36-08NO8
1200 1300 VUO 36-12NO8
1400 1500 VUO 36-14NO8
1600 1700 VUO 36-16NO8
1800 1900 VUO 36-18NO8
Symbol Conditions Characteristic Values
IRVR = VRRM TVJ = 25°C
TVJ = TVJM
0.3
2.0
mA
mA
VFIF = 150 A TVJ = 25°C 1.7 V
VT0
rt
For power-loss calculations only 0.8
7.4
V
m7
RthJC
RthCH
per diode; 120° el.
per module
per diode; 120° el.
per module
7.50
1.25
8.40
1.40
K/W
K/W
K/W
K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
+
~
~
~
-+
-
~
~
~
Dimensions in mm (1 mm = 0.0394“)
6.3 x 0.8
A
B
CD
E
22.1 ±0.5
10 ±0.2
28.5 ±0.2
8±0.3
12 ±0.3
28.5 ±0.2
12 ±0.3
© IXYS All rights reserved 2 - 2
20070807
VUO 36
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 3 I2t versus time (1-10 ms)
per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at
case temperature
Fig. 6 Transient thermal impedance per diode
Constants for ZthJC calculation:
Constants for ZthJK calculation:
i Rthi (K/W) ti (s)
1 0.194 0.024
2 0.556 0.07
3 2.25 5.8
4 6.3 8.5
i Rthi (K/W) ti (s)
1 0.194 0.024
2 0.556 0.07
3 2.25 5.8
4 6.3 8.5
5 0.9 28
