K9F2808U0B-DCB0 - Samsung Electronics

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

Document Title

16M x 8 Bit NAND Flash Memory

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.0

0.1

0.2

0.3

Remark

Advance

K9F2808Q0B

: Preliminary

History

Initial issue.

K9F2808U0B(3.3V device)’s qualification is finished

K9F2808Q0B (1.8V device)

- Changed typical read operation current (Icc1) from 8mA to 5mA

- Changed typical program operation current (Icc2) from 8mA to 5mA

- Changed typical erase operation current (Icc3) from 8mA to 5mA

- Changed typical program time(tPROG) from 200us to 300us

- Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns

- Changed CLE hold time(tCLH) from 10ns to 15ns

- Changed CE hold time(tCH) from 10ns to 15ns

- Changed ALE hold time(tALH) from 10ns to 15ns

- Changed Data hold time(tDH) from 10ns to 15ns

- Changed CE Access time(tCEA) from 45ns to 60ns

- Changed Read cycle time(tRC) from 50ns to 70ns

- Changed Write Cycle time(tWC) from 50ns to 70ns

- Changed RE Access time(tREA) from 35ns to 40ns

- Changed RE High Hold time(tREH) from 15ns to 20ns

- Changed WE High Hold time(tWH) from 15ns to 20ns

1. Device Code is changed

- TBGA package information : ’B’ --> ’D’

ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0

K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0

2. VIH ,VIL of K9F2808Q0B(1.8 device) is changed

(before revision)

(after revision)

Input High Voltage VIH I/O pins VccQ-0.4 VccQ

Except I/O pins VCC-0.4 -VCC

Input Low Voltage,

All inputs VIL -0-0.4

Input High Voltage VIH

I/O pins VccQ-0.4 VccQ

+0.3

Except I/O pins VCC-0.4 -VCC

+0.3

Input Low Voltage,

All inputs VIL --0.3 -0.4

Draft Date

May 28’th 2001

Jun. 30th 2001

Jul. 30th 2001

Aug. 23th 2001

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.4

0.5

0.6

Remark

Preliminary

History

1. IOL(R/B) of 1.8V device is changed.

-min. Value: 7mA -->3mA

-typ. Value: 8mA -->4mA

2. AC parameter is changed.

tRP(min.) : 30ns --> 25ns

1. Parameters are changed in 1.8V part(K9F2808Q0B) .

- tCH is changed from 15ns to 20ns

- tCLH is changed from 15ns to 20ns

- tALH is changed from 15ns to 20ns

- tDH is changed from 15ns to 20ns

1. Parameters are changed in 1.8V part(K9F2808Q0B) .

- tRP is changed from 25ns to 35ns

- tWB is changed from 100ns to 150ns

- tREA is changed from 40ns to 45ns

Draft Date

Nov 5th 2001

Feb 15th 2002

May 3rd 2002

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

GENERAL DESCRIPTION

FEATURES

• Voltage Supply

- K9F2808Q0B : 1.7~1.9V

- K9F2808U0B : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array : (16M + 512K)bit x 8bit

- Data Register : (512 + 16)bit x8bit

• Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

• 528-Byte Page Read Operation

- Random Access : 10µs(Max.)

- Serial Page Access

- K9F2808Q0B : 70ns

- K9F2808U0B : 50ns

• Fast Write Cycle Time

- Program Time

- K9F2808Q0B : 300µs(Typ.)

- K9F2808U0B : 200µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Package

- K9F2808U0B-YCB0/YIB0 :

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2808X0B-DCB0/DIB0

63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)

- K9F2808U0B-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

* K9F2808U0B-V(WSOPI ) is the same device as

K9F2808U0B-Y(TSOP1) except package type.

The K9F2808X0B is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or

3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation pro-

grams the 528-byte page in typical 200µs and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in a

page can be read out at 70ns/50ns(K9F2808Q0B:70ns, K9F2808U0B:50ns) cycle time per byte. The I/O pins serve as the ports for

address and data input/output as well as command input. The on-chip write control automates all program and erase functions

including pulse repetition, where required, and internal verification and margining of data. Even write-intensive systems can take

advantage of the K9F2808X0B’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with

real time mapping-out algorithm.

The K9F2808X0B is suitable for use in data memory of mobile communication system to reduce not only mount area but also power

consumption.

PRODUCT LIST

Part Number Vcc Range Organization PKG Type

K9F2808Q0B-D1.7 ~ 1.9V

TBGA

K9F2808U0B-Y

2.7 ~ 3.6V

TSOP1

K9F2808U0B-D TBGA

K9F2808U0B-VWSOP1

16M x 8 Bit Bit NAND Flash Memory

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

PIN CONFIGURATION (TSOP1)

K9F2808U0B-YCB0/YIB0

N.C

GND

R/B

N.C

Vcc

Vss

N.C

CLE

ALE

N.C

I/O7

I/O6

I/O5

I/O4

N.C

Vcc

Vss

N.C

I/O3

I/O2

I/O1

I/O0

N.C

PACKAGE DIMENSIONS

48-PIN LEAD PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)

48 - TSOP1 - 1220F Unit :mm/Inch

0.787±0.008

20.00±0.20

#24

0.20+0.07

-0.03

0.008+0.003

-0.001

0.50

0.0197

#48

#25

0.488

12.40 MAX

12.00

0.472

0.10

0.004 MAX

0.25

0.010

( )

0.039±0.002

1.00±0.05 0.002

0.05 MIN

0.047

1.20 MAX

0.45~0.75

0.018~0.030

0.724±0.004

18.40±0.10

0~8¡Æ

0.010

0.25 TYP

0.125+0.075

0.035

0.005+0.003

-0.001

0.50

0.020

( )

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

63-Ball TBGA (measured in millimeters)

K9F2808X0B-DCB0/DIB0

R/B/WE/CENCALE/WP

/RE CLE

NCNC

NC NC Vcc

NCNC I/O0

I/O1NC NC VccQ I/O5 I/O7

VssI/O6I/O4I/O3I/O2Vss

NC NC

NC NC NC

DNU

DNU DNU

DNU

DNU DNU

DNU

DNU DNU

DNUDNU

DNU DNU

DNU

PIN CONFIGURATION (TBGA)

PACKAGE DIMENSIONS (Top View)

9.00±0.10

#A1

Side View

Top View

0.90±0.10

0.45±0.05

4321

Bottom View

11.00±0.10

63-∅0.45±0.05

0.80 x7= 5.60

11.00±0.10

0.80 x5= 4.00

0.80

0.32±0.05

0.08MAX

2.80

2.00

9.00±0.10

(Datum B)

(Datum A)

0.20 M

A B

∅

0.80

0.80 x11= 8.80

0.80 x9= 7.20

6 5

9.00±0.10

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

PIN CONFIGURATION (WSOP1)

K9F2808U0B-VCB0/VIB0

PACKAGE DIMENSIONS

48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)

48 - WSOP1 - 1217F Unit :mm

15.40±0.10

#24

0.20 +0.07

-0.03 0.16 +0.07

-0.03

0.50TYP

(0.50±0.06)

#48

#25

12.00±0.10

0.10+0.075

-0.035

0.58±0.04

0.70 MAX

(0.1Min)

17.00±0.20

0°~8°

0.45~0.75

N.C

DNU

N.C

R/B

DNU

N.C

Vcc

Vss

N.C

DNU

CLE

ALE

N.C

DNU

N.C

DNU

N.C

I/O7

I/O6

I/O5

I/O4

N.C

DNU

N.C

Vcc

Vss

N.C

DNU

N.C

I/O3

I/O2

I/O1

I/O0

N.C

DNU

N.C

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

PIN DESCRIPTION

NOTE: Connect all VCC and VSS pins of each device to common power supply outputs.

Pin Name Pin Function

I/O0 ~ I/O7DATA INPUTS/OUTPUTS

The I/O pins are used to input command, address and data, and to output data during read operations. The

I/O pins float to high-z when the chip is deselected or when the outputs are disabled.

CLE COMMAND LATCH ENABLE

The CLE input controls the activating path for commands sent to the command register. When active high,

commands are latched into the command register through the I/O ports on the rising edge of the WE signal.

ALE ADDRESS LATCH ENABLE

The ALE input controls the activating path for address to the internal address registers. Addresses are

latched on the rising edge of WE with ALE high.

CHIP ENABLE

The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and

the device does not return to standby mode in program or erase opertion. Regarding CE control during read

operation, refer to ’Page read’ section of Device operation.

RE READ ENABLE

The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid

tREA after the falling edge of RE which also increments the internal column address counter by one.

WE WRITE ENABLE

The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of

the WE pulse.

WP WRITE PROTECT

The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage

generator is reset when the WP pin is active low.

R/B

READY/BUSY OUTPUT

The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or

random read operation is in process and returns to high state upon completion. It is an open drain output and

does not float to high-z condition when the chip is deselected or when outputs are disabled.

VccQ OUTPUT BUFFER POWER

VCCQ is the power supply for Output Buffer.

VccQ is internally connected to Vcc, thus should be biased to Vcc.

Vcc POWER

VCC is the power supply for device.

Vss GROUND

N.C NO CONNECTION

Lead is not internally connected.

GND GND INPUT FOR ENABLING SPARE AREA

To do sequential read mode including spare area , connect this input pin to Vss or set to static low state

or to do sequential read mode excluding spare area , connect this input pin to Vcc or set to static high state.

DNU DO NOT USE

Leave it disconnected.

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

512B Byte 16 Byte

Figure 1. FUNCTIONAL BLOCK DIAGRAM

Figure 2. ARRAY ORGANIZATION

NOTE : Column Address : Starting Address of the Register.

00h Command(Read) : Defines the starting address of the 1st half of the register.

01h Command(Read) : Defines the starting address of the 2nd half of the register.

* A8 is set to "Low" or "High" by the 00h or 01h Command.

* L must be set to "Low".

* The device ignores any additional input of address cycles than reguired.

I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7

1st Cycle A0A1A2A3A4A5A6A7

2nd Cycle A9A10 A11 A12 A13 A14 A15 A16

3rd Cycle A17 A18 A19 A20 A21 A22 A23 *L

VCC

X-Buffers

Command

I/O Buffers & Latches

Latches

& Decoders

Y-Buffers

Latches

& Decoders

Control Logic

& High Voltage

Generator Global Buffers Output

Driver

VSS

A9 - A23

A0 - A7

Command

I/0 0

I/0 7

Vcc/VCCQ

VSS

1st half Page Register

(=256 Bytes) 2nd half Page Register

(=256 Bytes)

32K Pages

(=1,024 Blocks)

512 Byte

8 bit

16 Byte

1 Block =32 Pages

= (16K + 512) Byte

I/O 0 ~ I/O 7

1 Page = 528 Byte

1 Block = 528 Bytes x 32 Pages

= (16K + 512) Byte

1 Device = 528Byte x 32Pages x 1024 Blocks

= 132 Mbits

Column Address

Row Address

(Page Address)

Page Register

128M + 4M Bit

NAND Flash

ARRAY

(512 + 16)Byte x 32768

Y-Gating

Page Register & S/A

CLE ALE

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

PRODUCT INTRODUCTION

The K9F2808X0B is a 132Mbit(138,412,032 bit) memory organized as 32,768 rows(pages) by 528 columns. Spare 16 columns are

located in 512 to 527 column address. A 528-byte data register is connected to memory cell arrays accommodating data transfer

between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16 cells that

are serially connected like NAND structure. Each of the 16 cells resides in a different page. A block consists of the 32 pages formed

by one NAND structures, totaling 8448 NAND structures of 16 cells. The array organization is shown in Figure 2. Program and read

operations are executed on a page basis, while erase operation is executed on a block basis. The memory array consists of 1024

blocks, and a block is separately erasable by 16K-byte unit. It indicates that the bit by bit erase operation is prohibited on the

K9F2808X0B.

The K9F2808X0B has addresses multiplexed with 8 I/O′s. This scheme dramatically reduces pin counts and allows systems

upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through

I/O′s by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address

Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one bus cycle

except Page Program command and Block Erase command which require two cycles: one cycle for setup and another for execution.

The 16M byte physical space requires 24 addresses, thereby requiring three cycles for byte-level addressing: column address, low

row address and high row address, in that order. Page Read and Page Program need the same three address cycles following

required command input. In Block Erase operation, however, only two row address cycles are used. Device operations are selected

by writing specific commands into command register. Table 1 defines the specific commands of the K9F2808X0B.

Table 1. COMMAND SETS

NOTE: 1. The 00h command defines starting address of the 1st half of registers.

The 01h command defines starting address of the 2nd half of registers.

After data access on 2nd half of register by the 01h command, start pointer is automatically moved to

1st half register(00h) on the next cycle.

Caution : Any undefined command inputs are prohibited except for above command set of Table 1.

Function 1st. Cycle 2nd. Cycle Acceptable Command during Busy

Read 1 00h/01h(1) -

Read 2 50h -

Read ID 90h -

Reset FFh -O

Page Program 80h 10h

Block Erase 60h D0h

Read Status 70h -O

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

ABSOLUTE MAXIMUM RATINGS

NOTE:

1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and VccQ pins. During transitions, this level may undershoot to -2.0V for periods

<20ns. Maximum DC voltage on input/output pins is VCCQ+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions

as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter Symbol Rating Unit

K9F2808Q0B(1.8V) K9F2808U0B(3.3V)

Voltage on any pin relative to VSS

VIN/OUT -0.6 to + 2.45 -0.6 to + 4.6 V

VCC -0.2 to + 2.45 -0.6 to + 4.6 V

VCCQ-0.2 to + 2.45 -0.6 to + 4.6 V

Temperature

Under Bias K9F2808X0B-YCB0,DCB0TBIAS -10 to + 125 °C

K9F2808X0B-YIB0,DIB0-40 to + 125

Storage Temperature TSTG -65 to + 150 °C

RECOMMENDED OPERATING CONDITIONS

(Voltage reference to GND, K9F2808X0B-YCB0,DCB0:TA=0 to 70°C, K9F2808X0B-YIB0,DIB0:TA=-40 to 85°C)

Parameter Symbol K9F2808Q0B(1.8V) K9F2808U0B(3.3V) Unit

Min Typ. Max Min Typ. Max

Supply Voltage VCC 1.7 1.8 1.9 2.7 3.3 3.6 V

Supply Voltage VCCQ1.7 1.8 1.9 2.7 3.3 3.6 V

Supply Voltage VSS 000000V

DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)

Parameter Symbol Test Conditions K9F2808Q0B(1.8V) K9F2808U0B(3.3V) Unit

Min Typ Max Min Typ Max

Operat-

ing

Current

Sequential Read ICC1CE=VIL, IOUT=0mA

K9F2808Q0B: tRC=70ns

K9F2808U0B: tRC=50ns -5 15 -10 20

Program ICC2- - 5 15 -10 20

Erase ICC3- - 5 15 -10 20

Stand-by Current(TTL) ISB1CE=VIH, WP=0V/VCC - - 1- - 1

Stand-by Current(CMOS) ISB2CE=VCC-0.2, WP=0V/VCC -10 50 -10 50

µA

Input Leakage Current ILI VIN=0 to Vcc(max) - - ±10 - - ±10

Output Leakage Current ILO VOUT=0 to Vcc(max) - - ±10 - - ±10

Input High Voltage VIH

I/O pins VccQ-0.4 VccQ+0

.3 2.0 -VCCQ+0.3

Except I/O pins VCC-0.4 -VCC

+0.3 2.0 -VCC+0.3

Input Low Voltage, All inputs VIL --0.3 -0.4 -0.3 -0.8

Output High Voltage Level VOH K9F2808Q0B :IOH=-100µA

K9F2808U0B :IOH=-400µAVCCQ-0.1 - - 2.4 - -

Output Low Voltage Level VOL K9F2808Q0B :IOL=100uA

K9F2808U0B :IOL=2.1mA - - 0.1 - - 0.4

Output Low Current(R/B)IOL

(R/B)K9F2808Q0B :VOL=0.1V

K9F2808U0B :VOL=0.4V 3 4 -8 10 -mA

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

MODE SELECTION

NOTE : 1. X can be VIL or VIH.

2. WP should be biased to CMOS high or CMOS low for standby.

CLE ALE CE WE RE WP Mode

HL L HXRead Mode Command Input

LHLHXAddress Input(3clock)

HL L H H Write Mode Command Input

LHLH H Address Input(3clock)

LLL H H Data Input

LLLHXData Output

LLLHHXDuring Read(Busy) on K9F2808U0B_Y or K9F2808U0B_V

XXXXHXDuring Read(Busy) on the devices except K9F2808U0B_Y

and K9F2808U0B_V

XXXXXHDuring Program(Busy)

XXXXXHDuring Erase(Busy)

XX(1) XXXLWrite Protect

XXHX X 0V/VCC(2) Stand-by

CAPACITANCE(TA=25°C, VCC=1.8V/3.3V, f=1.0MHz)

NOTE : Capacitance is periodically sampled and not 100% tested.

Item Symbol Test Condition Min Max Unit

Input/Output Capacitance CI/O VIL=0V -10 pF

Input Capacitance CIN VIN=0V -10 pF

VALID BLOCK

NOTE:

1. The K9F2808X0B may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks

is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or

program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.

2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.

Parameter Symbol Min Typ. Max Unit

Valid Block Number NVB 1004 -1024 Blocks

AC TEST CONDITION

(K9F2808X0B-YCB0,DCB0 :TA=0 to 70°C, K9F2808X0B-YIB0,DIB0:TA=-40 to 85°C

K9F2808Q0B : Vcc=1.7V~1.9V , K9F2808U0B : Vcc=2.7V~3.6V unless otherwise noted)

Parameter K9F2808Q0B K9F2808U0B

Input Pulse Levels 0V to VccQ 0.4V to 2.4V

Input Rise and Fall Times 5ns 5ns

Input and Output Timing Levels VccQ/2 1.5V

K9F2808Q0B:Output Load (VccQ:1.8V +/-10%)

K9F2808U0B:Output Load (VccQ:3.0V +/-10%) 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF

K9F2808U0B:Output Load (VccQ:3.3V +/-10%) -1 TTL GATE and CL=100pF

Program/Erase Characteristics

Parameter Symbol Min Typ Max Unit

Program Time tPROG -K9F2808Q0B:300

K9F2808U0B:200 500 µs

Number of Partial Program Cycles

in the Same Page Main Array Nop - - 2cycles

Spare Array - - 3cycles

Block Erase Time tBERS -2 3 ms

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

AC Timing Characteristics for Command / Address / Data Input

NOTE :

1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.

Parameter Symbol K9F2808Q0B K9F2808U0B Unit

Min Max Min Max

CLE Set-up Time tCLS 0-0-ns

CLE Hold Time tCLH 20 -10 -ns

CE Setup Time tCS 0-0-ns

CE Hold Time tCH 20 -10 -ns

WE Pulse Width tWP 25 (1) -25 -ns

ALE Setup Time tALS 0-0-ns

ALE Hold Time tALH 20 -10 -ns

Data Setup Time tDS 20 -20 -ns

Data Hold Time tDH 20 -10 -ns

Write Cycle Time tWC 70 -50 -ns

WE High Hold Time tWH 20 -15 -ns

AC Characteristics for Operation

NOTE :

1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.

2. To break the sequential read cycle, CE must be held high for longer time than tCEH.

3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.

Parameter Symbol K9F2808Q0B K9F2808U0B Unit

Min Max Min Max

Data Transfer from Cell to Register tR-10 -10 µs

ALE to RE Delay( ID read ) tAR1 20 -20 -ns

ALE to RE Delay(Read cycle) tAR2 50 -50 -ns

CLE to RE Delay tCLR 50 -50 -ns

Ready to RE Low tRR 20 -20 -ns

RE Pulse Width tRP 35 -25 -ns

WE High to Busy tWB -150 -100 ns

Read Cycle Time tRC 70 -50 -ns

CE Access Time tCEA -60 -45 ns

RE Access Time tREA -45 -35 ns

RE High to Output Hi-Z tRHZ 15 30 15 30 ns

CE High to Output Hi-Z tCHZ -20 -20 ns

RE High Hold Time tREH 20 -15 -ns

Output Hi-Z to RE Low tIR 0-0-ns

WE High to RE Low tWHR 60 -60 -ns

Device Resetting Time(Read/Program/Erase) tRST -5/10/500(1) -5/10/500(1) µs

K9F2808U0B-Y

only

Last RE High to Busy

(at sequential read) tRB -100 -100 ns

CE High to Ready(in case of inter-

ception by CE at read) tCRY -50 +tr(R/B)(3) -50 +tr(R/B)(3) ns

CE High Hold Time(at the last

serial read)(2) tCEH 100 -100 -ns

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

NAND Flash Technical Notes

Identifying Invalid Block(s)

Invalid Block(s)

Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The infor-

mation regarding invalid block(s) is so called as the invalid block information. Devices ,regardless of having invalid block(s), have the

same quality level because all valid blocks have same AC and DC characteristics. An invalid block(s) does not affect the perfor-

mance of valid block(s) because it’s bit line and common source line is isolated by a select transistor. The system design must be

able to mask out invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is fully guaranteed to be

a valid block, does not require Error Correction.

All device locations are erased(FFh) except locations where the invalid block(s) information is written prior to shipping. The invalid

block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either 1st or 2nd page of every invalid block

has non-FFh data at the column address of 517. Since invalid block information is also erasable in most cases, it is impossible to

recover the information once it was erased. Therefore, system must be able to recognize the invalid block(s) based on the original

invalid block information and create invalid block table via the following suggested flow chart(Figure 3). Any intentional erasure of the

original invalid block information is prohibited.

*Check "FFh" at the column address 517

Figure 3. Flow chart to create invalid block table.

Start

Set Block Address = 0

Check "FFh" ?

Increment Block Address

Last Block ?

End

Yes

Create (or update) No

Invalid Block(s) Table

of the 1st and 2nd page in the block

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

NAND Flash Technical Notes (Continued)

Program Flow Chart

Start

I/O 6 = 1 ?

Write 00h

I/O 0 = 0 ?

If ECC is used, this verification

Write 80h

Write Address

Write Data

Write 10h

Read Status Register

Write Address

Wait for tR Time

Verify Data No

Program Completed

or R/B = 1 ?

Program Error

Yes

Program Error

Yes

: If program operation results in an error, map out

the block including the page in error and copy the

target data to another block.

operation is not needed.

Error in write or read operation

Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for actual

data. The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-

ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect

the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased

empty block and reprogramming the current target data and copying the rest of the replaced block. To improve the efficiency of mem-

ory space, we recommend using ECC without any block replacement in read or verification failure due to single bit error case. Th e

said additional block failure rate does not include those reclaimed blocks.

Failure Mode Detection and Countermeasure sequence

Write

Erase Failure Status Read after Erase --> Block Replacement

Program Failure Status Read after Program --> Block Replacement

Read back ( Verify after Program) --> Block Replacement

or ECC Correction

Read Single Bit Failure Verify ECC -> ECC Correction

ECC : Error Correcting Code --> Hamming Code etc.

Example) 1bit correction & 2bit detection

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

Erase Flow Chart

Start

I/O 6 = 1 ?

I/O 0 = 0 ?

Write 60h

Write Block Address

Write D0h

Read Status Register

or R/B = 1 ?

Erase Error

Yes

: If erase operation results in an error, map out

the failing block and replace it with another block.

Erase Completed

Yes

Read Flow Chart

Start

Verify ECC

Write 00h

Write Address

Read Data

ECC Generation

Reclaim the Error

Page Read Completed

Yes

NAND Flash Technical Notes (Continued)

Block Replacement

* Step1

When an error happens in the nth page of the Block ’A’ during erase or program operation.

* Step2

Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)

* Step3

Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.

* Step4

Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.

Buffer memory of the controller.

1st Block A

Block B

(n-1)th

nth

(page)

{

∼

1st

(n-1)th

nth

(page)

{

∼

an error occurs.

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. ’00h’

command sets the pointer to ’A’ area(0~255byte), ’01h’ command sets the pointer to ’B’ area(256~511byte), and ’50h’ command sets

the pointer to ’C’ area(512~527byte). With these commands, starting column address can be set to somewhere of a whole

page(0~527byte). ’00h’ or ’50h’ is sustained until another address pointer command is entered. But, ’01h’ command is effective only

for one time operation. After any operation of Read, Program, Erase, Reset, Power_Up following ’01h’ command, the address

pointer returns to ’A’ area by itself. To program data starting from ’A’ or ’C’ area, ’00h’ or ’50h’ command must be entered before ’80h’

command is written. A complete read operation prior to ’80h’ command is not necessary. To program data starting from ’B’ area,

’01h’ command must be entered right before ’80h’ command is written.

00h

(1) Command input sequence for programming ’A’ area

Address / Data input

80h 10h 00h 80h 10h

Address / Data input

The address pointer is set to ’A’ area(0~255), and sustained

01h

(2) Command input sequence for programming ’B’ area

Address / Data input

80h 10h 01h 80h 10h

Address / Data input

’B’, ’C’ area can be programmed.

It depends on how many data are inputted. ’01h’ command must be rewritten before

every program operation

The address pointer is set to ’B’ area(256~512), and will be reset to

’A’ area after every program operation is executed.

50h

(3) Command input sequence for programming ’C’ area

Address / Data input

80h 10h 50h 80h 10h

Address / Data input

Only ’C’ area can be programmed. ’50h’ command can be omitted.

The address pointer is set to ’C’ area(512~527), and sustained

’00h’ command can be omitted.

It depends on how many data are inputted.

’A’,’B’,’C’ area can be programmed.

Pointer Operation of K9F2808X0B

Table 2. Destination of the pointer

Command Pointer position Area

00h

01h

50h

0 ~ 255 byte

256 ~ 511 byte

512 ~ 527 byte

1st half array(A)

2nd half array(B)

spare array(C)

"A" area

256 Byte

(00h plane) "B" area

(01h plane) "C" area

(50h plane)

256 Byte 16 Byte

"A" "B" "C"

Internal

Page Register

Pointer select

commnad

(00h, 01h, 50h) Pointer

Figure 4. Block Diagram of Pointer Operation

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

System Interface Using CE don’t-care.

WE tWP

tCH

tCS

Start Add.(3Cycle)80h Data Input

CLE

ALE

I/O0~7Data Input

CE don’t-care

≈

10h

For an easier system interface, CE may be inactive during data-loading or sequential data-reading as shown below. The internal

528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for

voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-

ing would provide significant saving in power consumption.

Start Add.(3Cycle)00h

CLE

ALE

I/O0~7Data Output(sequential)

CE don’t-care

≈

R/BtR

tCEA

out

tREA

I/O0~7

Figure 5. Program Operation with CE don’t-care.

Figure 6. Read Operation with CE don’t-care.

On K9F2808U0B_Y or K9F2808U0B_V

CE must be held

low during tR

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

* Command Latch Cycle

CLE

ALE

I/O0~7Command

* Address Latch Cycle

tCLS

tCS

tCLH

tCH

tWP

tALS tALH

tDS tDH

CLE

ALE

I/O0~7A0~A7

tCLS

tCS tWC

tWP

tALS

tDS tDH

tALH tALS

tWH

A9~A16

tWC

tWP

tDS tDH

tALH tALS

tWH

A17~A23

tWP

tDS tDH

tALH

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

* Input Data Latch Cycle

CLE

I/O0~7DIN 0 DIN 1 DIN 511

ALE tALS

tCLH

tWC

tCH

tDS tDH tDS tDH tDS tDH

tWP

tWH

tWP tWP

* Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)

R/B

I/O0~7Dout Dout Dout

tRC

tREA

tRR

tOH

tREA

tREH tREA tOH

tRHZ

≈

≈≈

≈≈≈≈

NOTES : Transition is measured ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

tRHZ

tCHZ

tRP

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

* Status Read Cycle

CLE

I/O0~770h Status Output

tCLR

tCLH

tCS

tWP tCH

tDS tDH tREA

tIR tOH

tOH

tWHR

tCEA

tCLS

NOTE : 1) is only valid on K9F2808U0B_Y or K9F2808U0B_V

READ1 OPERATION(READ ONE PAGE)

CLE

R/B

I/O0~7

ALE

Busy

00h or 01h A0 ~ A7A9 ~ A16 A17 ~ A24 Dout N Dout N+1 Dout N+2 Dout N+3

Column

Address Page(Row)

Address

tWB tAR2

tRtRC tRHZ

tRR

tCHZ

Dout 527

tRB

tCRY

tWC

≈≈ ≈

On K9F2808U0B_Y or K9F2808U0B_V

CE must be held

low during tR tCEH

tRHZ

tCHZ

tOH

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

READ2 OPERATION(READ ONE PAGE)

CLE

R/B

I/O0~7

ALE

50h A0 ~ A7A9 ~ A16 A17 ~ A23 Dout Dout 527

M Address

511+M Dout

511+M+1

tAR2

tWB

tRR

A0~A3 : Valid Address

A4~A7 : Don′t care

≈

Selected

Row

Start

address M

512 16

PAGE PROGRAM OPERATION

CLE

R/B

I/O0~7

ALE

80h 70h I/O0

Din

NDin Din 10h

527

N+1

A0 ~ A7A17 ~ A23A9 ~ A16

Sequential Data

Input Command Column

Address Page(Row)

Address 1 up to 528 Byte Data

Serial Input Program

Command Read Status

Command

I/O0=0 Successful Program

I/O0=1 Error in Program

tPROGtWB

tWC tWC tWC

≈

On K9F2808U0B_Y or K9F2808U0B_V

CE must be held

low during tR

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

BLOCK ERASE OPERATION(ERASE ONE BLOCK)

MANUFACTURE & DEVICE ID READ OPERATION

CLE

I/O 0 ~ 7

ALE

90h

Read ID Command Maker Code Device Code

00h ECh Device

tREA

Address. 1cycle

CLE

R/B

I/O0~7

ALE

60h A17 ~ A23A9 ~ A16

Auto Block Erase Erase Command Read Status

Command I/O0=1 Error in Erase

DOh 70h I/O 0

Busy

tWB tBERS

I/O 0=0 Successful Erase

Page(Row)

Address

tWC

≈

Setup Command

tAR1

tCLR

Device Device Code*

K9F2808Q0B 33h

K9F2808U0B 73h

Code*

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

DEVICE OPERATION

PAGE READ

Upon initial device power up, the device status is initially Read1 command(00h) latched. This operation is also initiated by writing

00h to the command register along with three address cycles. Once the command is latched, it does not need to be written for the fol-

lowing page read operation. Two types of operation are available : random read, serial page read. The random read mode is enabled

when the page address is changed. The 528 bytes of data within the selected page are transferred to the data registers in less than

10µs(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the output of R/B pin. Once the data

in a page is loaded into the registers, they may be read out by sequential RE pulse of 70ns/50n(K9F2808Q0B:70ns,

K9F2808U0B:50ns) period cycle. High to low transitions of the RE clock take out the data from the selected column address up to

the last column address.

Read1 and Read2 commands determine pointer which selects either main area or spare area. The spare area(512 to 527 bytes)

may be selectively accessed by writing the Read2 command. Addresses A0 to A3 set the starting address of spare area while

addresses A4 to A7 are ignored. To move the pointer back to the main area, Read1 command(00h/01h) is needed. Figures 7

through 8 show typical sequence and timing for each read operation.

Figure 7,8 details the sequence.

Sequential Row Read is available only on K9F2808U0B_Y or K9F2808U0B_V :

After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 10µs

again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation

is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of

each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page

of a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the

next block, read command and address must be given. Figures 7-1, 8-1 show typical sequence and timings for sequential row read

operation.

Figure 7. Read1 Operation

Start Add.(3Cycle)

00h A0 ~ A7 & A9 ~ A23

Data Output(Sequential)

(00h Command)

Data Field Spare Field

CLE

ALE

R/B

I/O0~7

* After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half array (00h) at next cycle.

(01h Command)*

Data Field Spare Field

1st half array 2st half array1st half array 2st half array

On K9F2808U0B_Y or K9F2808U0B_V

CE must be held

low during tR

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

Figure 8. Read2 Operation

50h

A0 ~ A3 & A9 ~ A23

Data Output(Sequential)

Spare Field

CLE

ALE

R/B

Data Field Spare Field

Start Add.(3Cycle)

(A4 ~ A7 :

Don′t Care)

I/O0~7

1st half array 2nd half array

Figure 7-1. Sequential Row Read1 Operation (only for K9F2808U0B-Y and K9F2808U0B-V, valid within a block)

00h

01h A0 ~ A7 & A9 ~ A24

I/O0 ~ 7

R/B

Start Add.(3Cycle) Data Output Data Output Data Output

1st 2nd Nth

(528 Byte) (528 Byte)

tRtRtR

≈

(GND input=L, 00h Command)

Data Field Spare Field

(GND input=L, 01h Command)

Data Field Spare Field

(GND input=H, 00h Command)

Data Field Spare Field

1st half array 2nd half array

1st

2nd

Nth

1st half array 2nd half array

1st

2nd

Nth

Block

1st half array 2nd half array

1st

2nd

Nth

On K9F2808U0B_Y or K9F2808U0B_V

CE must be held

low during tR

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

PAGE PROGRAM

The device is programmed basically on a page basis, but it allows multiple partial page program of one byte or consecutive bytes up

to 528, in a single page program cycle. The number of consecutive partial page program operation within the same page without

intervening erase operation should not exceed 2 for main array and 3 for spare array. The addressing may be done in any random

order in a block. Page program cycle consists of a serial data loading(up to 528 bytes of data) into the page register, and program of

loaded data into the appropriate cell. Serial data loading can start in 2nd half array by moving pointer. About the pointer operation,

please refer to the attached technical notes. Serial data loading is executed by entering the Serial Data Input command(80h) and

three cycle address input and then serial data loading. The bytes except those to be programmed need not to be loaded. The Page

Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering 80h will not initiate

program process. The internal write controller automatically executes the algorithms and timings necessary for program and verifica-

tion, thereby freeing the CPU for other tasks. Once the program process starts, the Read Status Register command may be entered,

with RE and CE low, to read the status register. The CPU can detect the completion of a program cycle by monitoring the R/B out-

put, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming

is in progress. When the Page Program is completed, the Write Status Bit(I/O 0) may be checked(Figure 9). The internal write verifi-

cation detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status com-

mand mode until another valid command is written to the command register.

Figure 9 details the sequence.

Figure 9. Program & Read Status Operation

80h

A0 ~ A7 & A9 ~ A23

I/O0~7

R/B

Address & Data Input I/O0Pass

528 Byte Data

10h 70h

Fail

tPROG

Figure 8-1. Sequential Row Read2 Operation (GND Input=Fixed Low)

50h

A0 ~ A3 & A9 ~ A24

I/O0~7

R/B

Start Add.(3Cycle) Data Output Data Output Data Output

2nd Nth

(16Byte) (16Byte)

Data Field Spare Field

1st

Block

(A4 ~ A7 :

Don′t Care)

1st

tRtRtR

≈

Nth

(only for K9F2808U0B-Y and K9F2808U0B-V, valid within a block)

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

Figure 10. Block Erase Operation

BLOCK ERASE

The Erase operation is done on a block(16K Bytes) basis. Block Erase is executed by entering Erase Setup command(60h) and 2

cycle block addresses and Erase Confirm command(D0h). Only address A14 to A23 is valid while A9 to A13 is ignored. This two-

step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external

noise condition. At the rising edge of WE after erase confirm command input, internal write controller handles erase and erase-veri-

fication. When the erase operation is completed, the Write Status Bit(I/O 0) may be checked.

Figure 10 details the sequence.

60h

Block Add. : A9 ~ A23

I/O0~7

R/B

Address Input(2Cycle) I/O0Pass

D0h 70h

Fail

tBERS

READ STATUS

The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether

the program or erase operation is completed successfully. After writing 70h command to command register, a read cycle takes out

the content of the Status Register to the I/O pins on the falling edge of CE or RE. This two line control allows the system to poll the

progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE does not need to be tog-

gled for updated status. Refer to table 3 for specific Status Register definitions. The command register remains in Status Read mode

until further commands are issued to it. Therefore, if the status register is read during a random read cycle, a read command(00h or

50h) should be given before sequential page read cycle.

I/O # Status Definition

I/O 0 Program / Erase "0" : Successful Program / Erase

"1" : Error in Program / Erase

I/O 1

Reserved for Future

Use

"0"

I/O 2 "0"

I/O 3 "0"

I/O 4 "0"

I/O 5 "0"

I/O 6 Device Operation "0" : Busy "1" : Ready

I/O 7 Write Protect "0" : Protected "1" : Not Protected

Table3. Read Status Register Definition

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

READ ID

The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of

00h. Two read cycles sequentially output the manufacture code(ECh), and the device code (73h) respectively. The command register

remains in Read ID mode until further commands are issued to it.

Figure 11 shows the operation sequence.

Figure 12. RESET Operation

RESET

The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random

read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no

longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and

the Status Register is cleared to value C0h when WP is high. Refer to table 4 for device status after reset operation. If the device is

already in reset state, new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST

after the Reset command is written. Reset command is not necessary for normal operation. Refer to Figure 12 below.

After Power-up After Reset

Operation Mode Read 1 Waiting for next command

FFh

I/O0~7

R/B

Table4. Device Status

tRST

Figure 11. Read ID Operation

CLE

I/O0~7

ALE

90h 00h ECh

Address. 1cycle Maker code Device code

tCEA

tAR1

tREA Device

tWHR

tCLR

Device Device Code*

K9F2808Q0B 33h

K9F2808U0B 73h

Code*

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

READY/BUSY

The device has a R/ B output that provides a hardware method of indicating the completion of a page program, erase and random

read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-

ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin

is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and

current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 13). Its value can be

determined by the following guidance.

VCC

R/B

open drain output

Device

GND

tr,tf [s]

Ibusy [A]

Rp(ohm)

Fig 13 Rp vs tr ,tf & Rp vs ibusy

Ibusy

ibusy

Busy

Ready Vcc

@ Vcc = 3.3V, Ta = 25

C , CL = 100pF

VOH

tf tr

1K 2K 3K 4K

100n

200n

300n 3m

100

200

300

400

3.6 3.6 3.6 3.6

2.4

1.2

0.8

0.6

VOL

Rp(min, 1.8V part) = VCC(Max.) - VOL(Max.)

IOL + ΣIL = 1.85V

3mA + ΣIL

where IL is the sum of the input currents of all devices tied to the R/B pin.

Rp value guidance

Rp(max) is determined by maximum permissible limit of tr

Rp(min, 3.3V part) = VCC(Max.) - VOL(Max.)

IOL + ΣIL = 3.2V

8mA + ΣIL

1.8V device - VOL : 0.1V, VOH : VCCq-0.1V

3.3V device - VOL : 0.4V, VOH : 2.4V

tr,tf [s]

Ibusy [A]

Rp(ohm)

Ibusy

@ Vcc = 1.8V, Ta = 25

C , CL = 30pF

1K 2K 3K 4K

100n

200n

300n 3m

60 90 120

1.7 1.7 1.7 1.7

1.7

0.85

0.57 0.43

FLASH MEMORY

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 1.1V/2V(K9F2808Q0B:1.1V, K9F2808U0B:2V). WP pin provides hardware pro-

tection and is recommended to be kept at VIL during power-up and power-down and recovery time of minimum 1µs is required

before internal circuit gets ready for any command sequences as shown in Figure 14. The two step command sequence for program/

erase provides additional software protection.

Figure 14. AC Waveforms for Power Transition

VCC

High

≈

K9F2808Q0B : ~ 1.5V

Data Protection & Powerup sequence

K9F2808U0B : ~ 2.5V K9F2808Q0B : ~ 1.5V

K9F2808U0B : ~ 2.5V

10µs

≈≈