FDME1034CZT - Fairchild Semiconductor Corporation

July 2010

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

FDME1034CZT

Complementary PowerTrench® MOSFET

N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ

Features

Q1: N-Channel

Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A

Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A

Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A

Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A

Q2: P-Channel

Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A

Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A

Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A

Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A

Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

Free from halogenated compounds and antimony

oxides

HBM ESD protection level > 1600 V (Note 3)

RoHS Compliant

General Description

This device is designed specifically as a single package solution

for a DC/DC ‘Switching’ MOSFET in cellular handset and other

ultra-portable applications. It features an independent

N-Channel & P-Channel MOSFET with low on-state resistance

for minimum conduction losses. The gate charge of each

MOSFET is also minimized to allow high frequency switching

directly from the controlling device.

The MicroFET 1.6x1.6 Thin pa ckage offers exceptio nal therma l

performance for it's physical size and is well suited to switching

and linear mode applications.

Applications

DC-DC Conversion

Level Shifted Load Switch

G2

S1

G1

D2

S2

D1

MicroFET 1.6x1.6 Thin

D1

D2

TOP

BOTTOM

Pin 1

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Q1 Q2 Units

VDS Drain to Source Voltage 20 -20 V

VGS Gate to Source Voltage ±8 ±8 V

IDDrain Current -Continuous T A = 25 °C (Note 1a) 3.8 -2.6 A

-Pulsed 6 -6

PDPower Dissipation for Single Operation T A = 25 °C (Note 1a) 1.4 W

Power Dissipation for Single Operation T A = 25 °C (Note 1b) 0.6

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 °C/W

RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195

Device Marking Device Package Reel Size Tape Width Quantity

5T FDME1034CZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

Electrical Characteristics TJ = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Symbol Parameter Test Conditions Type Min Typ Max Units

BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V

ID = -250 μA, VGS = 0 V Q1

Q2 20

-20 V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 250 μA, referenced to 25 °C

ID = -250 μA, referenced to 25 °C Q1

Q2 16

-12 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V

VDS = -16 V, VGS = 0 V Q1

Q2 1

-1 μA

IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V All ±10 μA

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA

VGS = VDS, ID = -250 μAQ1

Q2 0.4

-0.4 0.7

-0.6 1.0

-1.0 V

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Temperature Coefficient ID = 250 μA, referenced to 25 °C Q1

Q2 -3

2 mV/°C

rDS(on) Drain to Source On Resistance

VGS = 4.5 V, ID = 3.4 A

Q1

55 66

mΩ

VGS = 2.5 V, ID = 2.9 A 68 86

VGS = 1.8 V, ID = 2.5 A 85 113

VGS = 1.5 V, ID = 2.1 A 106 160

VGS = 4.5 V, ID = 3.4 A,

TJ =125°C 76 112

VGS = -4.5 V, ID = -2.3 A

Q2

95 142

VGS = -2.5 V, ID = -1.8 A 120 213

VGS = -1.8 V, ID = -1.5 A 150 331

VGS = -1.5 V, ID = -1.2 A 190 530

VGS = -4.5 V, ID = -2.3 A ,

TJ = 125 °C 128 190

gFS Forward Transconductance VDS = 4.5 V, ID =3.4 A

VDS = -4.5 V, ID = -2.3 A Q1

Q2 9

7S

Ciss Input Capacitance Q1

VDS = 10 V, VGS = 0 V, f = 1 MHz

Q2

VDS = -10 V, VGS = 0 V, f = 1 MHz

Q1

Q2 225

305 300

405 pF

Coss Output Capacitance Q1

Q2 40

55 55

75 pF

Crss Reverse Transfer Capacitance Q1

Q2 25

50 40

75 pF

td(on) Turn-On Delay Time Q1

VDD = 10 V, ID = 1 A,

VGS = 4.5 V, RGEN = 6 Ω

Q2

VDD = -10 V, ID = -1 A,

VGS = -4.5 V, RGEN = 6 Ω

Q1

Q2 4.5

4.7 10

10

ns

trRise Time Q1

Q2 2.0

4.8 10

10

td(off) Turn-Off Delay Time Q1

Q2 15

33 27

53

tfFall Time Q1

Q2 1.7

16 10

29

QgTotal Gate Charge Q1

VDD = 10 V, ID = 3.4 A,

VGS = 4.5 V

Q2

VDD = -10 V, ID = -2.3 A,

VGS = -4.5 V

Q1

Q2

3

5.5 4.2

7.7

nCQgs Gate to Source Gate Charge Q1

Q2 0.4

0.6

Qgd Gate to Drain “Miller” Charge Q1

Q2 0.6

1.4

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

Electrical Characteristics TJ = 25 °C unless otherwise noted

Drain-Source Diode Characteristics

Symbol Parameter Test Conditions Type Min Typ Max Units

VSD Source to Drain Diode Forward

Voltage VGS = 0 V, IS = 0.9 A (Note 2)

VGS = 0 V, IS = -0.9 A (Note 2) Q1

Q2 0.7

-0.8 1.2

-1.2 V

trr Reverse Recovery Time Q1

IF = 3.4 A, di/dt = 100 A/μS

Q2

IF = -2.3 A, di/dt = 100 A/μs

Q1

Q2 8.5

16 17

29 ns

Qrr Reverse Recovery Time Q1

Q2 1.4

4.4 10

10 nC

Notes:

1. RθJA is determined w ith the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR -4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

a. 90 °C/W when mounted on

a 1 in2 pad of 2 oz copper. b. 195 °C/ W when moun ted on a

minimum pad of 2 oz copper.

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted

Figure 1.

0.0 0.5 1.0 1.5

0

2

4

6

VGS = 1.8 V

VGS = 3 V

VGS = 4.5 V

VGS = 1.5 V

VGS = 2.5 V

PULSE D U R ATION = 80 μs

DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

0246

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 2.5 V VGS = 3 V

NORMALIZED

DRAIN TO SOURCE ON -R ESISTANCE

ID, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 1.8 V

VGS = 1.5 V

PULSE D U R ATION = 80 μs

DUTY CYCLE = 0.5% MAX

Normalized On-Resistance

vs Drain Current and Gate Voltage

Figure 3. Normalized On Resistance

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 3.4 A

VGS = 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPER ATURE (oC)

vs Junction Te mperature Figure 4.

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

50

100

150

200

250

300

TJ = 125 oC

ID = 3.4 A

TJ = 25 oC

VGS, G ATE TO SO U RC E V O LTAGE (V)

rDS(on), DRAIN TO

SOURCE ON-RESISTANCE (mΩ)

PULSE DUR ATION = 80 μs

DUTY CYCLE = 0.5% M AX

On-Resistance vs Gate to

Source Voltage

Figure 5. Transfer Characteristics

0.0 0.5 1.0 1.5 2.0

0

2

4

6

TJ = 150 oC

VDS = 5 V

PULSE DU RATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs Source Current

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

Figure 7.

0123

0.0

1.5

3.0

4.5

ID = 3.4 A

VDD = 10 V

VDD = 8 V

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CH ARGE ( nC )

VDD = 12 V

Gate Charge Characteristics Figure 8.

0.1 1 10 20

1

100

500

f = 1 MHz

VGS = 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure 9.

0.1 1 10 50

0.01

0.1

1

10

1 s

100 μs

DC

100 m s

10 m s

1 ms

10 s

ID, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

TH IS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MA X RA TED

RθJA = 195 oC/W

TA = 25 oC

Forward Bias Safe

Operating Area Figure 10.

0 3 6 9 12 15

10-9

10-8

10-7

10-6

10-5

10-4

10-3

10-2

10-1

VGS = 0 V

TJ = 25 oC

TJ = 125 oC

VGS, G ATE TO SOURC E VO LTAGE (V)

Ig, GATE LEAKAGE CURRENT (A)

Gate Leakage Current vs

Gate to Source Voltage

Figure 11. Single Pulse Maximum Power Dissipation

10-4 10-3 10-2 10-1 110

100 1000

1

10

100

P(PK), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJA = 195 oC/W

TA = 25 oC

t, PULSE WIDTH (s)

0.5

Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

Figure 12.

10-4 10-3 10-2 10-1 110

100 1000

0.005

0.01

0.1

1

2

SINGLE PULSE

RθJA = 19 5 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERM AL

IMPEDANCE, ZθJA

t, RECTANGULAR PULSE DURA TION (sec)

D = 0.5

0.2

0.1

0.0 5

0.0 2

0.0 1

PDM

t1t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJA x RθJA + TA

Junction-to-Ambient Transient Thermal Response Curve

Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted

Figure 13. On- Region Characteristics Figure 14. Normalized on-Resistance vs Drain

Current and Gate Voltag e

Figure 15. Normalized On-Resistance

vs Junction Temperature Figure 16. On-Resistance vs Gate to

Source Voltage

Figure 17. Transfer Characteristics Figure 18. Source to Drain Diode

Forward Voltage vs Source Current

0 0.5 1.0 1.5 2.0

0

2

4

6

VGS = -3 V VGS = -2 .5 V

PULSE DURA TION = 80 μs

DUTY CYCLE = 0.5% MAX

VGS = - 1.8 V

VGS = -1.5 V

VGS = -4 .5 V

-ID, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0246

0

1

2

3

VGS = -1.8 V

PULSE DURA TION = 80 μs

DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRA IN CURRENT (A)

VGS = -4.5 V

VGS = -2.5 V

VGS = -1 .5 V

VGS = -3 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = -2.3 A

VGS = -4 .5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERA TURE (oC)

1.01.52.02.53.03.54.04.5

0

100

200

300

400

500

ID = -2.3 A

TJ = 25 oC

TJ = 125 oC

-VGS, G A TE TO SOU RC E VO LTA GE (V)

rDS(on), DRAIN TO

SOURCE ON-RESISTANCE (mΩ)

PULSE D U RATION = 80 μs

DUTY CYCLE = 0.5% MA X

0.0 0.5 1.0 1.5 2.0

0

2

4

6

VDS = -5 V

PULSE D URA TION = 80 μs

DUTY CYCLE = 0.5% MA X

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

-ID, DRAIN CURRENT (A)

-VGS, GA TE TO SO UR CE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

-IS, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted

Figure 19. Gate Charge Characteristics Figure 20. Capacitance vs Drain

to Source Voltage

Figure 21. Forward Bias Safe

Operating Area Figure 22. Gate Leakage Current vs

Gate to Source Voltage

Fig 23. Single Pulse Maximum Power Dissipation

0246

0.0

1.5

3.0

4.5

ID = -2 .3 A

VDD = -10 V

VDD = -8 V

-VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -12 V

0.1 1 10 20

10

100

1000

f = 1 MH z

VGS = 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

0.1 1 10 60

0.01

0.1

1

10

100 us

DC

10 s

1 s

100 ms

10 ms

1 ms

-ID, DRAIN CU RREN T (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

TH IS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MA X RA TED

RθJA = 19 5 oC/W

TA = 25 oC

03691215

10-9

10-8

10-7

10-6

10-5

10-4

10-3

10-2

10-1

VDS = 0 V

TJ = 25 oC

TJ = 125 oC

-VGS, GATE TO SOU RCE VOLTA G E (V)

-Ig, GATE LEAKAGE CURRENT (A )

10-4 10-3 10-2 10-1 110

100 1000

0.3

1

10

100

1000

P(PK), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJA = 195 oC/W

TA = 25 oC

t, PULSE WIDTH (s)

Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted

Figure 24. Junction-to-Ambient Transient Thermal Response Curve

10-4 10-3 10-2 10-1 110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE

RθJA = 195 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE, ZθJA

t, RECTANGULAR PULSE DURATION (s)

D = 0.5

0.2

0.1

0.0 5

0.0 2

0.0 1

2

PDM

t1t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJA x RθJA + TA

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

Dimensional Outline and Pad Layout

FDME1034CZT Complementary PowerTrench® MOSFET

FDME1034CZT Rev.C1

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PRODUCT STATUS DEFINITIONS

Definition of Terms

AccuPower™

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

DEUXPEED®

Dual Cool™

EcoSPARK®

EfficentMax™

ESBC™

Fairchild®

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FACT®

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FastvCore™

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FlashWriter® *

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Global Power ResourceSM

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Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

OptiHiT™

OPTOLOGIC®

OPTOPLANAR®

®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™

®*

The Power Franchise®

®

TinyBoost™

TinyBuck™

TinyCalc™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

TRUECURRENT™*

μSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

®

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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

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date. Fairchild Semiconductor reserves the right to make changes at any time without

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make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

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Rev. I48

™