Ordering number : ENN7125 MCH5805 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5805 DC / DC Converter Applications Package Dimensions unit : mm 2195 0.25 [MCH5805] 0.15 0.3 5 3 2 0.65 1 0.07 1.6 4 0.25 Composite type with a P-channel sillicon MOSFET (MCH3314) and a Schottky barrier diode (SB01-05) contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * 4V drive. [SBD] * Short reverse recovery time. * Low forward voltage. 2.0 5 4 0.85 * 2.1 Features 1 2 3 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS --60 V 20 V ID --0.6 A --2.4 A Allowable Power Dissipation IDP PD PW10s, duty cycle1% 0.8 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +125 C VRRM VRSM 50 V 50 V Average Output Current IO 0.1 A Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg Mounted on a ceramic board (900mm20.8mm) 1unit [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle 2 A --55 to +125 C --55 to +125 C Marking : QE Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM TA-3399 No.7125-1/5 MCH5805 Electrical Characteristics at Ta=25C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance V(BR)DSS IDSS ID=--1mA, VGS=0 VDS=--60V, VGS=0 IGSS VGS(off) VGS=16V, VDS=0 VDS=--10V, ID=--1mA --1.2 yfs RDS(on)1 VDS=--10V, ID=--0.3A 460 RDS(on)2 Ciss --60 V --1 A 10 A --2.6 V 670 mS ID=--0.3A, VGS=--10V ID=--0.2A, VGS=--4V 1.3 1.7 1.6 2.3 VDS=--20V, f=1MHz 73 pF Output Capacitance Coss pF Crss VDS=--20V, f=1MHz VDS=--20V, f=1MHz 7 Reverse Transfer Capacitance 4 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns Rise Time tr td(off) See specified Test Circuit. 3.5 ns See specified Test Circuit. 12.5 ns tf See specified Test Circuit. 3 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--0.6A 2.4 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--0.6A 0.6 nC Gate-to-Drain "Miller" Charge Qgd VDS=--10V, VGS=--10V, ID=--0.6A 0.2 Diode Forward Voltage VSD IS=--0.6A, VGS=0 VR VF 1 IR=50A IF=100mA VR=25V --0.88 nC --1.2 V [SBD] Reverse Voltage Forward Voltage Reverse Current 50 Interterminal Capacitance IR C VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. V 0.55 V 15 A 4.4 pF 10 ns Electrical Connection (Top view) 4 2 3 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --30V VIN Duty10% 100mA 0V --10V ID= --0.3A RL=100 VIN D VOUT PW=10s D.C.1% 50 100 10s 10 10mA 1 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 100mA 5 --5V G trr MCH5805 P.G 50 S No.7125-2/5 MCH5805 ID -- VDS [MOSFET] VDS= --10V V --0.3 --0.2 VGS= --2.5V --0.6 --0.4 Ta= 75 C 25 --2 5C C --3 --0.8 0 --3. --0.4 ID -- VGS --1.0 Drain Current, ID -- A V --10 --6. 0 Drain Current, ID -- A --0.5 [MOSFET] .5 --4 V .0 V .0V --0.6 --0.2 --0.1 0 0 0 --0.25 --0.50 --0.75 --1.00 --1.25 --1.50 --1.75 --2.00 0 IT03941 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [MOSFET] 4.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT03942 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 4.0 3.5 Static Drain-to-Source On-State Resistance, RDS(on) -- 3.0 2.5 --0.3A 2.0 ID= --0.2A 1.0 0.5 --2 --4 --8 --10 --12 --14 --16 --18 2.0 1.5 1.0 0.5 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C IF -- VSD --1.0 140 160 IT03944 [MOSFET] VGS=0 7 5 25C 1000 7 5 25C Ta= -75C 3 2 100 7 5 3 2 3 2 --0.1 --25C Forward Current, IF -- A 3 2 7 5 3 2 10 --0.01 2 3 5 7 2 --0.1 3 5 Drain Current, ID -- A SW Time -- ID 100 --0.01 --0.4 7 --1.0 IT03945 5 100 Ciss, Coss, Crss -- pF tf 10 td(on) 5 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 f=1MHz Ciss 5 td(off) 7 --0.6 7 3 2 --0.5 Diode Forward Voltage, VSD -- V IT03946 Ciss, Coss, Crss -- VDS [MOSFET] [MOSFET] VDD= --30V VGS= --10V 7 Switching Time, SW Time -- ns --20 IT03943 Gate-to-Source Voltage, VGS -- V yfs -- ID [MOSFET] VDS= --10V 10000 7 5 Forward Transfer Admittance, yfs -- mS --6 --4V S= V G V , --10 2A S= --0. VG , = 3A ID --0. I D= 2.5 0 --60 0 0 3.0 25C 1.5 3.5 Ta= 75C Static Drain-to-Source On-State Resistance, RDS(on) -- Ta=25C tr 3 2 10 5 3 3 2 2 1.0 Coss 7 Crss 1.0 3 5 7 --0.1 2 3 5 Drain Current, ID -- A 7 --1.0 2 IT03947 0 --10 --20 --30 --40 --50 Drain-to-Source Voltage, VDS -- V --60 IT03948 No.7125-3/5 MCH5805 VGS -- Qg --10 5 10s 2 10 1m 0s s --8 --7 --6 --5 --4 --3 --2 --1.0 0 0.5 1.0 1.5 2.0 DC 3 2 Total Gate Charge, Qg -- nC s op Operation in this area is limited by RDS(on). --0.1 7 5 ati on Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT03950 Drain-to-Source Voltage, VDS -- V IT03949 PD -- Ta 1.0 s 0m er --0.01 --0.1 2.5 m 10 2 0 10 ID= --0.6A 7 5 3 --1 Allowable Power Dissipation, PD -- W [MOSFET] IDP= --2.4A 3 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 A S O [MOSFET] VDS= --10V ID= --0.6A [MOSFET] M 0.8 ou nt ed on 0.6 ac er am ic bo ar 0.4 d( 90 0m m2 0 .8m 0.2 m )1 un it 0 0 20 40 60 100 80 120 140 160 Ambient Temperature, Ta -- C IT03951 IF -- VF [SBD] 5 Reverse Current, IR -- A 2 100 7 5 25 10 7 5 C 12 5C 3 2 Ta= Forward Current, IF -- mA [SBD] Ta=125C 5 3 2 3 2 100 5 100C 2 10 75C 5 50C 2 1.0 5 25C 2 0.1 5 1.0 7 5 2 0.01 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage, VF -- V 20 30 40 50 60 C -- VR 5 70 ID00261 [SBD] f=1MHz (3) Rectangular wave (2) 0.06 10 Reverse Voltage, VR -- V [SBD] (1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 0.08 0 ID00260 PF(AV) -- IO 0.10 0.7 Interterminal Capacitance, C -- pF 0 Average Forward Power Dissipation, PF(AV) -- W IR -- VR 1000 (4) (1) 360 0.04 Sine wave 0.02 3 2 10 7 5 3 2 180 0 0 0.02 0.04 0.06 0.08 0.10 Average Forward Current, IO -- A 360 0.12 0.14 IT03952 1.0 1.0 2 3 5 7 10 2 3 Reverse Voltage, VR -- V 5 7 100 ID00263 No.7125-4/5 MCH5805 IS -- t 2.8 Surge Forward Current, IS(Peak) -- A Current waveform 50Hz sine wave 2.4 IS 20ms t 2.0 1.6 1.2 0.8 0.4 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 ID00264 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.7125-5/5