PD - 91339A IRF520N HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.20 G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew 9.7 6.8 38 48 0.32 20 91 5.7 4.8 5.0 -55 to + 175 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.50 --- 3.1 --- 62 C/W 5/13/98 IRF520N Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 100 --- --- 2.0 2.7 --- --- --- --- --- --- --- --- --- --- --- IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- LS Internal Source Inductance --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- V(BR)DSS V(BR)DSS/TJ IGSS Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- 4.5 23 32 23 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.20 VGS = 10V, ID = 5.7A 4.0 V VDS = V GS, ID = 250A --- S VDS = 50V, ID = 5.7A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 25 ID = 5.7A 4.8 nC VDS = 80V 11 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 5.7A ns --- RG = 22 --- RD = 8.6, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 330 --- VGS = 0V 92 --- pF VDS = 25V 54 --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- 9.7 --- --- 38 --- --- --- --- 99 390 1.3 150 580 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 5.7A, VGS = 0V TJ = 25C, I F = 5.7A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 4.7mH RG = 25, IAS = 5.7A. (See Figure 12) ISD 5.7A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. D S IRF520N 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , D rain-to-Source Current (A ) D I , D rain-to-Source Current (A ) D 10 4.5 V 20 s P U LS E W ID TH TC = 2 5C 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 1 10 10 4 .5V 2 0 s P U L S E W ID TH T C = 17 5C 1 A 0.1 100 3.0 R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e (N o rm alize d) I D , D ra in -to-S ourc e C urrent (A) 100 TJ = 25 C TJ = 17 5 C V DS= 50V 2 0 s P U LS E W ID TH 4 5 6 7 8 9 A 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1 10 V DS , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ourc e V oltage (V ) 10 1 10 V G S , G ate-to -Source Volta ge (V ) Fig 3. Typical Transfer Characteristics A I D = 9.5 A 2.5 2.0 1.5 1.0 0.5 V G S = 1 0V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , J unc tion T em perature (C ) Fig 4. Normalized On-Resistance Vs. Temperature IRF520N V GS C is s C rs s C o ss 500 C , Capacitance (pF) C iss = = = = 20 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C gd V G S , G ate-to-S ource V oltage (V ) 600 I D = 5.7 A 16 400 12 C oss 300 200 C rss 100 0 10 8 4 FO R TE S T C IR C U IT S E E FIG U R E 1 3 0 A 1 100 0 V D S , D rain-to -S ource V oltage (V ) 5 10 15 20 A 25 Q G , T otal G ate C harge (nC ) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (o n) 10s I D , Drain C urrent (A ) I SD , Reverse D rain C urrent (A) V D S = 80 V V D S = 50 V V D S = 20 V TJ = 17 5C 10 TJ = 2 5C V G S = 0V 1 0.4 0.6 0.8 1.0 1.2 V S D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.4 10 100 s 1m s 1 10m s T C = 25 C T J = 17 5C S ing le P u lse 0.1 1 10 100 A 1000 V D S , D rain-to-S ource V oltage (V ) Fig 8. Maximum Safe Operating Area IRF520N RD VDS 10.0 VGS D.U.T. RG + - VDD I D , Drain Current (A) 8.0 10V Pulse Width 1 s Duty Factor 0.1 % 6.0 Fig 10a. Switching Time Test Circuit 4.0 VDS 90% 2.0 0.0 25 50 75 100 125 150 10% VGS 175 TC , Case Temperature ( C) td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.1 IRF520N L VDS D.U.T. RG + V - DD IAS 10 V tp 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD E A S , S ingle P ulse A valanche E nergy (m J) 200 TO P B O TTO M 160 120 80 40 0 V D D = 25 V 25 VDS ID 2 .3 A 4.0 A 5 .7A 50 A 75 100 125 150 175 S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS QGD D.U.T. VGS VG 3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + V - DS IRF520N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRF520N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) -B - 3 .7 8 (.149 ) 3 .5 4 (.139 ) 4.69 ( .18 5 ) 4.20 ( .16 5 ) -A - 1 .32 (.05 2) 1 .22 (.04 8) 6.47 (.25 5) 6.10 (.24 0) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 3 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) 0 .3 6 (.01 4) 3X M B A M 0.55 (.02 2) 0.46 (.01 8) 2 .92 (.11 5) 2 .64 (.10 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L O T C O D E 9 B 1M A IN TE R N A T IO N A L R E C TIFIE R LOGO ASSEMBLY L OT C O D E PART NU MBER IR F 1 0 10 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98