IRF520N
HEXFET® Power MOSFET
PD - 91339A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
S
D
G
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.7
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A
IDM Pulsed Drain Current 38
PD @TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy91 mJ
IAR Avalanche Current5.7 A
EAR Repetitive Avalanche Energy4.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.1
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
Thermal Resistance
VDSS = 100V
RDS(on) = 0.20Ω
ID = 9.7A
T
O
-22
0
AB
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
Description
5/13/98
IRF520N
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V
trr Reverse Recovery Time ––– 99 150 ns TJ = 25°C, I F = 5.7A
Qrr Reverse RecoveryCharge ––– 390 5 80 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 10 0 ––– – –– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.20 ΩVGS = 10V, ID = 5.7A
VGS(th) Gate Threshold Voltage 2 .0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 2.7 ––– ––– S VDS = 50V, ID = 5.7A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge –– – –– – 25 ID = 5.7A
Qgs Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 4.5 ––– VDD = 50V
trRise Time ––– 23 ––– ID = 5.7A
td(off) Turn-Off Delay Time ––– 32 ––– RG = 22Ω
tfFall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 330 ––– VGS = 0V
Coss Output Capacitance ––– 92 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, IAS = 5.7A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
9.7
38 A
IRF520N
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Dra in -to - S o u rc e V o lta
g
e
(
V
)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BO TT OM 4.5V
20
µ
s PULSE W IDTH
T = 2 5° C
C
A
4.5V
1
10
100
0.1 1 10 100
4.5V
I , D rain-to-Source Current (A)
D
V , Dra in -to -S ou rc e Vo lta
g
e
(
V
)
DS
VGS
TOP 15V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
BOTTOM 4.5V
20
µ
s P ULSE WIDTH
T = 17 5°C
C
A
1
10
100
45678910
T = 25 °C
J
GS
V , G a te-to -Sou rce V olta
g
e (V )
D
I , D ra in -to -S o urc e C u rre nt (A )
V = 5 0V
20µs PULSE WIDTH
DS
T = 175°C
J
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , J u nc tio n Temp eratur e (°C )
R , D ra in -to -S o urc e On Re s ista nce
DS(on)
(Normalized)
V = 1 0V
GS
A
I = 9 . 5A
D
IRF520N
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
100
200
300
400
500
600
1 10 100
C , Capacitance (pF)
DS
V , Dra in -to - S ou r c e V o lta
g
e
(
V
)
A
V = 0 V , f = 1 M H z
C = C + C , C S H O RT E D
C = C
C = C + C
GS
iss gs gd ds
rss gd
os s d s g d
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25
Q , T o ta l Ga te C h a r
g
e
(
nC
)
G
V , Ga te -to-So u rc e Vo ltag e (V )
GS
V = 8 0 V
V = 5 0 V
V = 2 0 V
DS
DS
DS
A
FOR TEST CIRCUIT
SE E F IG U R E 1 3
I = 5 . 7 A
D
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 2 5° C
J
V = 0 V
GS
V , S ourc e-to-D rain Voltage (V)
I , R e ve rs e D r ain C u rre n t (A )
SD
SD
A
T = 17 5°C
J
0.1
1
10
100
1 10 100 1000
V , Dra in -to -S ou rc e Vo lta
g
e
(
V
)
DS
I , Drain C urrent (A)
OPERATION I N THIS AREA L I MI T ED
B Y R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 2 5 °C
T = 1 7 5° C
Sin
g
le Pulse
C
J
IRF520N
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10b. Switching Time Waveforms
RD
VGS
RGD.U.T.
10V
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
+
-
VDD
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF520N
Fig 12a. Unclamped Inductive Test Circuit
V
DS
L
D.U.T.
V
DD
I
AS
t
p
0.01Ω
R
G
+
-
t
p
V
DS
I
AS
V
DD
V
(BR)DSS
10 V
Fig 12b. Unclamped Inductive Waveforms
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
40
80
120
160
200
25 50 75 100 125 150 175
J
E , Sin g le P ul s e Ava lanc he En erg y ( mJ )
AS
A
Startin
g
T , Junction Tem perature
(
°C
)
V = 2 5 V
I
T O P 2 .3 A
4.0 A
B OTTO M 5.7A
DD
D
IRF520N
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF520N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
TO-220AB
Part Marking Information
LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - S O UR C E
4 - D R A IN
- B -
1 .32 (.05 2)
1 .22 (.04 8)
3X 0.55 (.022)
0.46 (.018)
2 .92 (.115)
2 .64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10 .54 (.415)
10 .29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0 .3 6 (.01 4) M B A M
4
1 2 3
NOTES:
1 D IMENSIONING & T OLERANCI N G PER ANSI Y 14 . 5 M, 1 98 2 . 3 O UTL INE CONFORMS T O J EDEC OUTL INE T O- 2 2 0- AB.
2 CONTROLLIN G DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
PART NUMBER
INTERNATIONAL
RECT I F IER
L OGO
EXAMP LE : TH IS IS AN IRF1010
W IT H ASSEMBLY
LOT CODE 9 B1 M
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9 B 1M
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
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http://www.irf.com/ Data and specifications subject to change without notice. 5/98
