MRF1946 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF1946 is Designed for 12.5 V 175 MHz Large-SignalPower Amplifier Applications. PACKAGE STYLE .380" 4L FLG B .112 x 45 A E FEATURES INCLUDE: * High Common Emitter Power Gain * Output Power = 30 W C O.125 NOM. FULL R J .125 B E C D E F MAXIMUM RATINGS G IC 8.0 A VCE 16 V VCB 36 V PDISS 100 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C JC 1.75 C/W MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 E F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 BVCES IC = 25 mA BVCEO IC = 25 mA TEST CONDITIONS VBE = 0 IB = 0 BVEBO IE = 5.0 mA IC = 0 mA ICES VCE = 15 V VBE = 0 hFE IC = 1.0 A Cob VCB = 15 V GPE VCC = 12.5 V VCC = 15.5 V .240 / 6.10 J .255 / 6.48 TC = 25 C SYMBOL DIM I CHARACTERISTICS H I MINIMUM TYPICAL MAXIMUM VCE = 5.0 V IE = 0 mA Pout = 30 W V 16 V 4.0 V 40 f = 1.0 MHz f = 175 MHz PIN = 2.0 dB Overdrive UNITS 36 5.0 mA 75 150 --- 75 100 pF 12 60 DB % No Degradation in Power Output Load VSWR = 30:1 ALL PHASE ANGLES A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. 0 1/1