A D V A N C E D S E M I C O N D U C T O R, I N C. REV. 0
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCES IC = 25 mA VBE = 036V
BVCEO IC = 25 mA IB = 016
V
BVEBO IE = 5.0 mA IC = 0 mA 4.0 V
ICES VCE = 15 V VBE = 05.0
mA
hFE IC = 1.0 A VCE = 5.0 V 40 75 150 ---
Cob VCB = 15 V IE = 0 mA f = 1.0 MHz 75 100 pF
GPE
η
ηη
ηVCC = 12.5 V Pout = 30 W f = 175 MHz 12
60 DB
%
ψ
ψψ
ψVCC = 15.5 V PIN = 2.0 dB Overdrive
Load VSWR = 30:1 ALL PHASE ANGLES
No Degradation in Power Output
NPN SILICON RF POWER TRANSISTOR
MRF1946
DESCRIPTION:
The MRF1946 is Designed for
12.5 V 175 MHz Large-SignalPower
Amplif ier Applications.
FEATURES INCLUDE:
• High Comm on Em itter Power Gain
• Output Power = 30 W
MAXIMUM RATINGS
IC8.0 A
VCE 16 V
VCB 36 V
PDISS 100 W @ TC = 25 °C
TJ-65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 1.75 °C/W
PACKAGE STYLE .380" 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
C
B
E
E
