2N4403 2N4403 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz PNP PNP Version 2006-10-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Mae [mm] 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 2N4403 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 40 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 40 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEB0 5V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) - IC 600 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. hFE hFE hFE hFE hFE 30 60 100 100 20 - - - - - - - - 300 - Small signal current gain - Kleinsignal-Stromverstarkung hfe 60 - 500 Input impedance - Eingangs-Impedanz hie 1.5 k - 15 k Output admittance - Ausgangs-Leitwert hoe 1 S - 30 S Reverse voltage transfer ratio - Spannungsruckwirkung hre - 8*10-4 DC current gain - Kollektor-Basis-Stromverhaltnis 2) - IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA, - VCE VCE VCE VCE VCE = = = = = 1V 1V 1V 2V 2V h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz 1 2 -4 0.1*10 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 2N4403 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - - - - 0.40 V 0.75 V - VBEsat - VBEsat 0.75 V - - - 0.95 V 1.3 V - ICEX - - 100 nA - IEBV - -- 100 nA fT 200 MHz - - CCBO - - 8.5 pF CEBO - - 30 pf td - - 15 ns tr - - 20 ns ts - - 225 ns tf - - 30 ns Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - VCEsat - VCEsat Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 35 V, - VEB = 0,4 V Emitter-Base cutoff current - Emitter-Basis-Reststrom - VCE = 35 V, - VEB = 0,4 V Gain-Bandwidth Product - Transitfrequenz - IC = 20 mA, - VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time - ICon = 10 mA - IBon = 1 mA IBoff = 1 mA fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 2 1 2 RthA < 420 K/W 1) 2N4401 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG