S 4 MY ft f Metal-Encased Silicon SEPT Transistors EMITTER 1 E These dual-emitter PNP silicon planar epitaxial transistors DU T are specifically designed for low-level high speed chopper and commutating applications. They feature high voltage rat- DUAL EMITTER ings, low offset voltages, low emitter capacitances and ex- cellent thermal characteristics. They are supplied in a four ISEPT TRANSISTORS (os to.t7ncsave COLLECTOR EMITTER 2 MAXIMUM RATINGS CHARACTERISTICS Pp @ | Junc. 25 | Temp.| Veco | Veso | Veco} Vso | leo | Vo | AVojle) | AVoiry | reie2 | Ci | Con fr Type No.| (mW) | (C) | (Volts) | (Volts) | (Volts)| (Volts) | (nA) | GV) (uV) (uV) (ohms) | (pF) | (pF) | (MHz) 3N90 300 200 30 30 30 50 1 50 25 15 100 3 10 6 3N91 300 200 30 30 30 50 1 100 25 125 100 3 10 6 3N92 300 200 30 30 30 50 1 200 50 175 100 3 10 6 Panes [300 | 200 [ 50 | 50 | so] 50 | 1 | 50 25 75 mH] 3 | wl 6 ) 10-72 3N94 300 200 50 50 50 50 1 100 50 125 75 3 10 6 Package 3N95 300 200 50 50 50 50 1 200 75 175 100 3 10 6 4+ 3N107 300 200 50 50 50 60 5 250 125 ~ 100 6 _ = 3N123 100 200 25 25 25 30 1 250 100 100 100 3 10 6 151) = 0.5MA, lpia) = 1.5MA, *Tayy = 25C, Tara) = +100C, Ip = mA * 3N107 pinned differently than other devices. Pin 1 = emitter 1, pin 2 = base, pin 3 = collector, pin 4 = emitter 2. LOW NOISE AMPLIFIERS / SWITCHES z Pp MAX. RATINGS we |@25C] Vier | Vier | Vier) | Icao Saturation Voltage (Max.) fr Cob NF. S | mw | ceo | ceo | EBO | nA hre @ lc |} Is | Vce Vee | Min. | Max. | Max. Type No.| 2 Max. | Volts | Volts | Volts | Max.| f = 10uA} (mA)| (mA) | Volts | Volts | (MHz) | (pF) | (dB) 2N4383 NPN 800 40 30 5 10 100-500 10 1 0.20 0.80 30 8 2 2N4385 NPN 800 40 30 5 10 40-500 10 1 0.20 0.80 30 8 3 1 2N4412 PNP 600 40 30 5 10 100-500 10 1 0.20 0.80 20 8 2 2N412A{ PNP {| 600 | 60 | 60 5 10 100-500 | 10 1 [0.20 | 0.80 20 | 8 2 T0-5 2N4414_ | PNP 600 40 30 5 10 40-500 10 1 0.20 0.80 20 8 2 Package 2N4414A [| PNP 600 60 60 5 10 40-500 10 1 0.20 0.80 20 8 2 1_2N2483 NPN 400 60 60. 6 10 40-120 l oO) | 0.35 0.70 60 6 4 2N2484_| NPN 400 60 60 6 10 100-500 1 0.1 | 0.35 0,70 60 6 3 2N4384_| NPN 500 40 30 5 10 100-500 10 1 0.20 0.80 30 8 2 2N4386 NPN 500 40 30 5 10 40-500 10 1 0.20 0.80 30 8 3 2N4413,_ (7 PNP 400 40 30 5 10 100-500 10 1 0.20 0.80 20 8 2 2N4413A | PNP 400 60 60 5 10 100-500 10 1 0.20 0.80 20 8 2 2NaaI5 | PNP | 400 | 401 30 5 | 10 40-500 | 10 | 11 0.20] 0.80 | 2013 2 TO-18 2N4415A ] PNP 400 60 60 5 10 40-500 10 1 0.20 0.80 20 8 2 Package HIGH-CURRENT CORE DRIVERS z Pp MAX. RATINGS ; ss, cm 1@ 25C| Vier} Vier) | Vier) [Ico Saturation Voitage(Max)| fr Cop al | a Watts |cBo |cEO | EBO | uA hee @ hee @ hre@ [ Ic] Ia] Vee] Vee | Min.) pF Cr Type No.) & Max. | Volts | Volts | Volts | Max.JI = 100mA |lc = 500mA | Ic = 800mA|mA mA \Volts |Volts [MHz |Max. |! 2N3724 | NPN 3.5 50 30 6 17 60-150 35 25 500] 50 | 0.42 1.2 }| 300 12 TO-39 25 | NPN} 3.5 80 50 6 17 60-150 35 20 500] 50 | 0.52 1,2 | 300 10 2N4013 | NPN | 12 50 30 6 17 60-150 35 25 500] 50} 0.42 12 7 300 12 2N4014 | NPN 1.2 80 50 6 1? 60-150 35 20 500} 50 | 0.52 1.2 | 300 10 TO 18 16