TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSIII) 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. [| 132, @ Low Drain-Source ON Resistance : RNS (QN)=1.05Q. (Typ.) => @ High Forward Transfer Admittance : [Y.|=7.0S (Typ.) @ Low Leakage Current : Ingg=100uA (Max.) (Vpg=720V) @ Enhancement-Mode : Vi,p=2.0~4.0V (Vpg=10V, Ip=1mA) MAXIMUM RATINGS (Ta = 25C) 5420.25, | 2540.5 CHARACTERISTIC SYMBOL | RATING | UNIT Sf IE 3 2 -1--2 --3- S Drain-Source Voltage Vpss 900 V be | Drain-Gate Voltage (Rgg=20kQ) VDGR 900 Vv 1. GATE 3 Gate-Source Voltage Vass +30 Vv 2. DRAIN 3. SOURCE Drain C t DC Ip 8.5 A main Wurren Pulse Ipp 25.5 A JEDEC _ Drain Power Dissipation (Te=25C) Pp 90 Ww EIAJ Single Pulse Avalanche Energy** Eas 966 mJ TOSHIBA 2-16F1B Avalanche Current IAR 8.5 A Weight : 5.8g (Typ.) Repetitive Avalanche Energy* EAR 9 md Channel Temperature Teh 150 C Storage Temperature Range Tstg 55~150 C THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL |MAX.| UNIT Thermal Resistance, Channel to Case Rth (ch-c) | 1.89 [C/W Thermal Resistance, Channel to Ambient Rth (ch-a) | 41.6 |C/W Note ; * Repetitive rating ; Pulse Width Limited by Max. Junction temperature. ** Vpp=90V, Te, =25C (initial), L=24.5mH, Rg=250, IAR=8.5A This transistor is an electrostatic sensitive device. Please handle with caution. 961001EAA1 and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual 2000-02-02 1/5TOSHIBA 2SK3017 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate Leakage Current Iass Vas=+30V, Vps=0V | +10] 4A Gate-Source Breakdown =+ = + _ _ Voltage V (BR) GSS/IqG= +10uA, Vpg=0V +30 Vv Drain Cut-off Current Ipss Vps=720V, Vag=0V 100 | A Drain-Source Breakdown Voltage V (BR) DSs|Ip=10mA, Vgg=0V 900 |} Vv Gate Threshold Voltage Vth Vps=10V, Ip=1mA 2.0 | 40] V Drain-Source ON Resistance |[RDS(ON) | VGS=10V, Inp=4A _ 1.05} 1.25 | Q Forward Transfer Admittance IY 5] Vps=15V, Ip=4A 3.5 7.0) s Input Capacitance Cigg | 2150; Reverse Transfer c Vps=25V, Vas=0V _ 35 | Fr Capacitance TSS f=1MHz P Output Capacitance Coss 220] Rise Time tr 10V Ip=4A Vour| ~ 25) VGS Ov Turn-on Time | ton S RL= 60); Switching a 1000 n Time a s Fall Time tf 25) Vpp=400V . VIN : ty, tp<Sns, Turn-off Time | _ toff Duty <1%, tw=10/s 120; Total Gate Charge (Gate- ; Qe | | mm] Source Plus Gate-Drain) Vpp=400V, Vog=10V C Gate-Source Charge Qos Ip=8A 37 | n Gate-Drain (Miller) Charge Qea 33) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Continuous Drain Reverse Current IDR i - - 8.5) A Pulse Drain Reverse Current | Ippp = 25.5] A Diode Forward Voltage VpsF |IpR=8.5A, Vag=0V |-19] V Reverse Recovery Time trr IpR=8.5A, Vag=0V |1300 ns Reverse Recovery Charge Qrr dIpr/dt=100A/ us |145 | | 2c MARKING TOSHIBA > Lot Number K3017 =e | Month (Starting from Alphabet A [EL onth (Starting from Alphabet A) WU Year (Last Number of the Christian Era) 2000-02-02 2/5TOSHIBA 2SK3017 (A) DRAIN CURRENT Ip (A) DRAIN CURRENT Ip FORWARD TRANSFER ADMITTANCE [Yrsl (S) Ip Vps COMMON SOURCE ot UO Tc=25C 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vpg (V) Ip Vas COMMON SOURCE Vpg=50V Te=100C 0 2 4 6 8 10 GATE-SOURCE VOLTAGE V@qg (V) lYfs| Ip COMMON SOURCE Vps=15V Te= 55C 100 0.8 06 1 3 6 10 30 DRAIN CURRENT Ip (A) (A) DRAIN-SOURCE VOLTAGE Vps_ (V) DRAIN CURRENT Ip DRAIN-SOURCE ON RESISTANCE Rps (on) (0) Ip Vps COMMON SOURCE wt AU RO To=25C 10 20 30 40 50 DRAIN-SOURCE VOLTAGE Vps_ (V) VDs VGs COMMON SOURCE Teo=25C Ip=10A 4 8 12 16 20 GATE-SOURCE VOLTAGE Vag (V) Rps(ONn) Ip COMMON SOURCE Te=25C VGs=10V 3 5 10 30-50 100 DRAIN CURRENT Ip (A) 2000-02-02 3/5TOSHIBA 2SK3017 RDS (ON) Te IpR Vps 4 1 COMMON 2 COMMON I SOURCE = SOURCE 4 Vgs=10v me Te=25C a 3 f a 2 Y cs BS Ip=5A Wy z 1 mo 7 3 a m CF 2 Ly 5 aS XK, & B L285 a oe Ln fs 1 a LA > % 1 Le ce < Lo a3 i z a _"| 3 Q 3 1 0 0.1 80 40 Q 40 80 120 160 0 -0.2 -0.4 -06 -08 -10 -12 -14 CASE TEMPERATURE Te (C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE Vps Vth Tc 10000 COMMON SOURCE Vps=10V Ip=1mA (Vv) 5000 3000 ae 2 Co oo 500 CAPACITANCE C (pF) wo S oS GATE THRESHOLD VOLTAGE Vth 100 50 COMMON SOURCE 30) Veg=0Vv -80 40 0 40 80 120 160 Ten 25C CASE TEMPERATURE Te (C f=1MHz 0) 10 0.1 0305 1 3 5 10 30 50 100 DRAIN-SOURCE VOLTAGE Vpg (V) Pp Te DYNAMIC INPUT/ OUTPUT 500 _ COMMON SOURCE = = Tce=25C Ip=8A = a 400 ~ a n Z 2 3 5 Vpp=100V gi <= 300 8 a 5 200 g a a ce : 5 a 159 S oO 200 fe z Q ic > o 2 a] nD 2 x z 100 3 [ont A < a 0 o 0 40 80 120 160 0 20 40 60 80 100 CASE TEMPERATURE Te (C) TOTAL GATE CHARGE Q, (nC) 2000-02-02 4/5TOSHIBA 2SK3017 Tth tw 0.5 0.3 01 0 0.03; 2: SINGLE PULSE mi LIL t 0.01F" Ear J 0 Duty =t/T Rth (ch_c)=1.89C /W 0.003 104 1004 1m 10m 100m 1 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth t)/Rth (ch-c) PULSE WIDTH ty (s) SAFE OPERATING AREA EAS Teh 0 Ip MAX. (PULSE) DC OPERATION To=25C % SINGLE NONREPETITIVE PULSE Tce=25C Curves must be derated 0 linearly with increase in 25 50 15 100 125 150 ooo Vpss AVALANCHE ENERGY Eas (md) DRAIN CURRENT Ip) (A) temperature. CHANNEL TEMPERATURE (INITIAL) Tyh (CC) 1 3 10 30 100 =. 300 1000 3000 DRAIN-SOURCE VOLTAGE Vpg (V) BYDSS 15V IAR _15V II | Fa \ VDD / \ VDS |} 3 TEST CIRCUIT WAVE FORM BvDSS Peak IAR=8.5A, RG=250 Eas=L BypssVpp Vpp=90V, L=24.5mH 2000-02-02 5/5