SBC548 Semiconductor NPN Silicon Transistor Descriptions * General purpose application * Switching application Features * High voltage : VCEO=30V * Complementary pair with SBC558 Ordering Information Type NO. Marking SBC548 SBC548 Package Code TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 4.50.1 2.250.1 2.060.1 14.00.40 0.40.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Collector 2. Base 3. Emitter 0.38 1.200.1 1 2 3 KST-9026-000 1 SBC548 (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 30 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 5 V Collector current IC 100 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 Base-Emitter turn on voltage VBE(ON) VCE=5V, IC=2mA Base-Emitter saturation voltage VBE(sat) Collector-Emitter saturation voltage VCE(sat) Collector cut-off current DC current gain Transition frequency ICBO * hFE fT Test Condition Min. Typ. Max. Unit 30 - - V 550 - 700 mV IC=100mA, IB=5mA - 900 - mV IC=100mA, IB=5mA - - 600 mV VCB=35V, IE=0 - - 15 nA 110 - 800 - VCE=5V, IC=10mA - 150 - MHz VCE=5V, IC=2mA Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - - 4.5 pF Noise figure NF VCE=5V, IC=200A, f=1KHz, Rg=2K - - 10 dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-9026-000 2 SBC548 Electrical Characteristic Curves Fig. 2 IC -VBE Fig. 1 PC-Ta Fig. 3 IC -VCE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC KST-9026-000 3