KST-9026-000 1
SBC548
NPN Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• High voltage : VCEO=30V
• Complementary pair with SBC558
Ordering Information
Type NO. Marking Package Code
SBC548 SBC548 TO-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Collector
2. Bas e
3. Emitter
14.0±0.40
KST-9026-000 2
SBC548
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 30 V
Collector-Emitter voltage VCEO 30 V
Emitter-Base voltage VEBO 5V
Collector current IC100 mA
Collector dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=1mA, IB=0 30 - - V
Base-Emitter tu r n on voltage VBE(ON) VCE=5V, IC=2mA 550 - 700 mV
Base-Emitter sa turation voltage VBE(sat) IC=100mA, IB=5mA - 900 - mV
Collec tor -Emitter s a turation voltage VCE(sat) IC=100mA, IB=5mA - - 600 mV
Collector cut-off current ICBO VCB=35V, IE=0 - - 15 nA
DC current gain hFE*VCE=5V, IC=2mA 110 - 800 -
Transition frequency fTVCE=5V, IC=10mA - 150 - MHz
Collec tor output capac itance Cob VCB=10V, IE=0, f=1MHz - - 4.5 pF
Noise figure NF VCE=5V, IC=200µA,
f=1KHz, Rg=2KΩ--10dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-9026-000 3
SBC548
Electrical Characteristic Curves
Fig. 4 hFE -IC
Fig. 2 IC -VBE
Fig. 3 IC -VCE
Fig. 5 VCE(sat) -IC
Fig. 1 PC-Ta
