International Rectifier HEXFET Power MOSFET @ Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175C Operating Temperature Fast Switching Ease of Paralleling Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low PD-9.895 IRF510S Voss = 100V Roscon) = 0.540 Ip = 5.6A on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. SMD-220 Absolute Maximum Ratings Parameter Max. Units lo @ To = 25C Continuous Drain Current, Vas @ 10 V 56 lp @ To= 100C | Continuous Drain Current, Vas @ 10 V 4.0 A lpm Pulsed Drain Current 20 Pp @ Tc =25C | Power Dissipation 43 Ww Pp @ Ta= 25C __| Power Dissipation (PCB Mount)** 3.7 | Linear Derating Factor 0.29 Wee Linear Derating Factor (PCB Mount)** 0.025 Ves Gate-to-Source Voltage 20 V | Eas Single Pulse Avalanche Energy @ 100 mJ lan Avalanche Current 56 A Ear Repetitive Avalanche Energy 43 mJ dv/dt Peak Diode Recovery dv/dt_ @ 6.5 Vins Ty, Tsta Junction and Storage Temperature Range -55 to +175 C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Min. Typ. Max, Units Resc Junction-to-Case =_ 3.5 Raa Junction-to-Ambient (PCB mount)** = _ 40 C Pasa Junction-to-Ambient _ _ 62 ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 119IRF510S | Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vier)pss Drain-to-Source Breakdown Voltage 100 | _ V__ | Ves=0V, In= 250A AV (erypss/ATy| Breakdown Voltage Temp. Coefficient | 0.12 | | VC | Reference to 25C, lb= 1mA Ros(on) Static Drain-to-Source On-Resistance _ | 0.54] QO | Vas=10V, lp=3.4A Vesan) Gate Threshold Voltage 2.0 ~ 4.0 V__| Vos=Ves, lp= 250A Ols Forward Transconductance 1.3 _ =_ S| Vos=50V, Ip=3.4A @ Ipss Drain-to-Source Leakage Current 25 BA Vos=100V, Vas-0V _ | 250 Vps=80V, Ves=0V, Ty=150C lass Gate-to-Source Forward Leakage _ | 100 nA Vas=20V Gate-to-Source Reverse Leakage | -100 Vas=-20V Qg Total Gate Charge _ 8.3 Ip=5.6A Ogs Gate-to-Source Charge _ 2.3 nC | Vps=80V Qoa Gate-to-Drain ("Miller") Charge _ _ 3.8 Vas=t0V See Fig. 6 and 13 tavon) Turn-On Delay Time | 69 = Vop=50V tr Rise Time _ 16 = ns Ipb=5.6A tatotty Turn-Off Delay Time _ 15 _ Re=24Q tr Fall Time = 9.4 Rp=8.4Q See Figure 10 i) Internal Drain Inductance _ 45 _ B mn (0. goad ) S nH | from package al Ls Internal Source Inductance |} 75] and center of die contact s Ciss Input Capacitance _ 180 | Veg=0V Coss Output Capacitance _ 81 _ PF | Vog=25V Crss Reverse Transfer Capacitance _- 15 f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ | 56 MOSFET symbol o (Body Diode) . A showing the ism Pulsed Source Current _ _ 20 integral reverse (Body Diode) @ p-n junction diode. s Vsp Diode Forward Voltage _ _ 2.5 V_ | Ty=25C, Is=5.6A, Vas=0V tre Reverse Recovery Time | 100 | 200 | ns _ | Ty=25C, Ir=5.6A Qr Reverse Recovery Charge | 0.44 | 0.88 |) pC | di/dt=100A/1s ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Lg+Lp) Notes: Repetitive rating; pulse width limited by Isps5.6A, di/dt<75A/us, Vop-j D.U.T. 7 Von \Pi0V Putse Width < 11s Duty Factor s 0.1% r Fig 10a. Switching Time Test Circuit Vps 90% 25 50 78 100 125 150 175 Ves | Tc, Case Temperature (C) tajon) te taof) 4 Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 ~ oO rf o 4 wn c QO Q wo oO a & . SINGLE PULSE 3 9. (THERMAL RESPONSE) Fr E& 6 LJ ee ea! NOTES: 4. DUTY FACTOR, D=t1/t2 2. PEAK Ty*Ppm x Ztnjc + Te 10 105 10-4 1973 1078 0.4 4 410 t;, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 123IRF510S Vary tp to obtain Vos > required fas 300 250 200 150 100 50 Eas, Single Pulse Energy (mJ) OD = Vos 0 25 50 75 100 125 150 175 Starting Ty, Junction Temperature(C) as Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator | | rN 50KO. 4] Lave Line | 3 | + aur jv OT r eR SES SESS ETS A Nos YD: + Qes > Qep Ves VG ama f fe Charge > la * Ib Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing - See page 1507 Appendix C: Part Marking Information - See page 1515 Intemational Appendix D: Tape & Reel Information See page 1519 Rectifier 124