UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE(sat) *High current gain TO-220 1:BASE 2:COLLECTOR 3:EMITTER MAXIMUM RATINGS(Ta=25C) CHARACTERISTICS Collector Base Voltage Collector to Emitter Voltage Emitter To base Voltage Collector Current Junction Temperature Storage Temperature Total Power Dissipations SYMBOL VALUE UNITS VCBO VCEO VEBO IC Tj Tstg PD 40 30 5 10 150(Max) -55 ~ +150 65 V V V A C C W CHARACTERISTICS(Ta=25C) SYMBOL BVCEO ICBO ICEO IEBO VCE(SAT) VBE(ON) hFE1 hFE2 UTC TEST CONDITIONS IC=100mA VCB=40V VCE=20V VEB=5V IC=10A,IB=10mA IC=5mA,VCE=2.0V IC=500mA,VCE=2.0V IC=10A,VCE=2.0V MIN TYP MAX UNIT 20 1 1 100 2.0 2.0 60 60 V A A nA V V K K 30 2 1 UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-004,A UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR TYPICAL PERFORMANCE CHARACTERISTICS CURRENT GAIN VS. COLLECTOR CURRENT OUTPUT CAPACITANCE VS. REVERSE-BIASED VOLTAGE 10 3 10 2 Output Capacitance(pF) Current Gain(Hfe) 10 4 3 10 2 10 1 10 1 2 10 4 3 10 10 Collector Current(mA) -1 10 ON VOLTAGE VS. COLLECTOR CURRENT On Voltage(mV) 3 10 1 10 2 10 10 3 10 2 10 4 3 10 1 Collector Current(mA) 10 10 2 10 10 4 3 3 PT=1ms PT=100ms 10 2 PT=1s Tstg Switching Times(ns) 10 4 Collector Current(mA) 2 SWITCHING TIMES VS. COLLECTOR CURRENT 5 10 3 10 Collector Current(mA) SAFE OPERATING AREA 10 1 10 Reverse-Biased Voltage SATURATIION VOLTAGE VS. COLLECTOR CURRENT 10 4 Saturation Voltage(mV) 10 4 10 10 10 2 10 10 1 1 UTC 10 Collector-Emitter Voltage ( V ) 10 2 1 10 10 4 3 UNISONIC TECHNOLOGIES Collector Current(mA) CO. LTD 2 QW-R203-004,A