BUL310FP (R) HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT) APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ) s ( ct u d o 1 TO-220FP o s b O ) s ( t c e t e l Pr 3 2 INTERNAL SCHEMATIC DIAGRAM u d o DESCRIPTION The BUL310FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. r P e t e l o s b O ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj April 2003 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1000 500 9 5 10 3 4 36 -65 to 150 150 Unit V V V A A A A W o C o C 1/6 BUL310FP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 3.5 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 1000 V V CE = 1000 V I CEO Collector Cut-off Current (I B = 0) V CE = 500 V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA L= 25 mH I E = 10 mA V CE(sat) Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A V BE(sat) Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A DC Current Gain I C = 10 mA IC = 3 A h FE ts tf INDUCTIVE LOAD Storage Time Fall Time ts tf INDUCTIVE LOAD Storage Time Fall Time o r P )- s b O Safe Operating Areas 2/6 A A 250 A V s b O t c u d o r P e t e l o 10 6 1 1.1 1.2 V V V 1.9 160 IC = 2 A V BE(off) = -5V V CL = 250 V T j = 125 o C I B1 = 0.4 A R BB = 0 L = 200 H (see figure 1) 1.8 150 Derating Curve V V V 14 1.2 80 V 0.5 0.7 1.1 10 I B1 = 0.4 A R BB = 0 L = 200 H Pulsed: Pulse duration = 300 s, duty cycle 1.5 % e t e ol Unit 100 500 (s) 9 VCE = 5 V V CE = 2.5 V Max. 500 IC = 2 A V BE(off) = -5 V V CL = 250 V (see figure 1) s ( t c du Typ. T j = 125 o C Emitter-Base Voltage (I C = 0) V EBO Min. s ns s ns BUL310FP DC Current Gain DC Current Gain ) s ( ct u d o r P e Collector Emitter Saturation Voltage Base Emitter Saturation Voltage t e l o ) (s s b O t c u d o r P e s b O t e l o Inductive Load Fall Time Inductive Load Storage Time 3/6 BUL310FP Reverse Biased SOA ) s ( ct u d o r P e t e l o Figure 1: Inductive Load Switching Test Circuit ) (s t c u d o r P e t e l o (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier s b O 4/6 s b O BUL310FP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 F1 1.15 1.7 0.045 F2 1.15 1.7 0.045 G 4.95 5.2 0.195 G1 2.4 2.7 0.094 H 10 10.4 0.393 L2 28.6 30.6 L4 9.8 10.6 L6 15.9 16.4 L7 9 O 3 s ( t c 3.2 B Pr 0.204 0.106 0.409 0.630 1.126 1.204 0.385 0.417 0.626 0.645 0.354 0.366 0.118 0.126 D r P e A u d o 0.067 E u d o t e l o o s b O ) 9.3 0.067 e t e l 16 L3 ) s ( ct 0.039 L3 s b O L6 F2 H G G1 F F1 L7 1 2 3 L2 L4 5/6 BUL310FP ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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