BUL310FP
HIGH VOLTAG E FAST-SWITCHING
NPN POWER TRANSISTOR
STMicr o electronics PREF E RRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREA D OF DYNA M IC PARA ME TERS
MINI MUM LO T- TO-LOT SP R E AD F O R
REL IABLE OPERATIO N
VERY HIGH SWITCHING SPEED
FULLY CHAR ACTE RIZED AT 125oC
LARGE RBSOA
FULLY MOLDE D INS ULAT E D PA CKAG E
2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS
HORIZONTAL DEFLECTION FOR COLOUR
TV
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
FLYB ACK A ND F ORW ARD SING LE
TR A NSI STO R LOW PO W ER CO NV ERT E RS
DESCRIPTION
The BUL310FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
®
INT E R NAL SCH E M ATI C DIAG RA M
April 2003
TO-220FP
123
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1000 V
VCEO Collector-Emitter Voltage (IB = 0) 500 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
ICCollector Current 5 A
ICM Collector Peak Current (tp <5 ms) 10 A
IBBase Current 3 A
IBM Base Peak Current (tp <5 ms) 4 A
Ptot Total Dissipation at Tc = 25 oC36W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max 3.5
62.5
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 10 00 V
VCE = 10 00 V Tj = 125 oC100
500 µA
µA
ICEO Collector Cut-off
Current (IB = 0) VCE = 50 0 V 250 µA
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA L= 25 mH 500 V
VEBO Emitter-Base Voltage
(IC = 0) IE = 10 mA 9 V
VCE(sat)Collector-Emitter
Saturation Voltage IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
IC = 3 A IB = 0.6 A
0.5
0.7
1.1
V
V
V
VBE(sat)Base-Emitter
Saturation Voltage IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
IC = 3 A IB = 0.6 A
1
1.1
1.2
V
V
V
hFEDC Current Ga in IC = 10 mA VCE = 5 V
IC = 3 A VCE = 2.5 V 10
61014
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A IB1 = 0.4 A
VBE(off) = -5 V RBB = 0
VCL = 250 V L = 200 µH
(see figure 1)
1.2
80 1.9
160 µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A IB1 = 0.4 A
VBE(off) = -5V RBB = 0
VCL = 250 V L = 200 µH
Tj = 12 5 oC (see figure 1)
1.8
150 µs
ns
P ulsed: P ulse durati on = 300 µs, duty cycle 1.5 %
Safe O perat ing Areas Derating Curve
BUL310FP
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DC Current Gai n
Col lector Emitter Saturation Voltage
Induct ive Lo ad Fall T im e
DC Current Gain
Base Em itt er Sat uration Volt age
Inductive Load St orage Tim e
BUL310FP
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Reverse Bias e d SOA
Figure 1: Inductive Load Switching Test Circuit
(1) Fast electronic switc h
(2) Non-induct ive Resisto r
(3) Fast recovery rectifier
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
BUL310FP
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich may resul t fro m its u se. N o li cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject t o change without notice. This publication supersedes and r eplaces all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroel ectronics.
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BUL310FP
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