Bulletin I27132 rev. I 09/04 IRK.71, .91 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 75 A 95 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IRK.71 IRK.91 Units 75 95 A IO(RMS) (*) 165 210 A ITSM @ 50Hz 1665 1785 A IFSM @ 60Hz 1740 1870 A @ 50Hz 13.86 15.91 KA 2s @ 60Hz 12.56 14.52 KA 2s 138.6 159.1 KA 2s IT(AV) or I F(AV) @ 85C 2 I t 2 I t VRRM range 400 to 1600 TSTG - 40 to 125 o V C TJ - 40 to125 o C (*) As AC switch. www.irf.com 1 IRK.71, .91 Series Bulletin I27132 rev. I 09/04 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code IRK.71/ .91 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit - V V V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 IRRM IDRM 125C mA 15 On-state Conduction Parameters IT(AV) IRK.91 75 95 165 210 Units Conditions Max. average on-state current (Thyristors) IF(AV) IRK.71 Max. average forward 180 o conduction, half sine wave, TC = 85o C current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch I(RMS) A or ITSM Max. peak, one cycle 1665 1785 t=10ms No voltage or non-repetitive on-state 1740 1870 t=8.3ms reapplied IFSM or forward current I2 t Max. I2t for fusing 1400 1500 t=10ms 100% VRRM 1570 t=8.3ms reapplied 1850 2000 t=10ms TJ = 25oC, t=8.3ms no voltage reapplied 1940 2100 13.86 15.91 t=10ms No voltage 12.56 14.52 t=8.3ms reapplied 9.80 11.25 8.96 10.27 17.11 20.00 15.60 18.30 138.6 159.1 VT(TO) Max. value of threshold 0.82 0.80 voltage (2) 0.85 0.85 Max. value of on-state 3.00 2.40 slope resistance (2) 2.90 2.25 1.59 1.58 rt VTM Max. peak on-state or VFM forward voltage di/dt Max. non-repetitive rate of rise of turned on 2 KA s Max. holding current Max. latching current (1) I2t for time t x = I2t x tx Initial TJ = T J max. t=8.3ms reapplied t= 8.3ms no voltage reapplied KA2s V m V t=0.1 to 10ms, no voltage reapplied,TJ = TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = T J max TJ = TJ max TJ = 25C TJ = 25 oC, from 0.67 V DRM , 150 A/s I TM = x I T(AV), I g = 500mA, t r < 0.5 s, t p > 6 s 250 T J = 25oC, anode supply = 6V, mA IL t=10ms 100% VRRM Initial TJ = T J max. t=10ms TJ = 25oC, current IH Sinusoidal half wave, 1470 Max. I2t for fusing (1) I2t I(RMS) 400 resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7% x x I AV < I < x IAV (4) I > x IAV 2 www.irf.com IRK.71, .91 Series Bulletin I27132 rev. I 09/04 Triggering Parameters IRK.71 12 12 PG(AV) Max. average gate power 3.0 3.0 IGM 3.0 3.0 PGM Max. peak gate power IRK.91 Max. peak gate current -VGM Max. peak negative VGT gate voltage 10 Max. gate voltage 4.0 required to trigger Units W A TJ = - 40C V 2.5 TJ = 25C 1.7 IGT Max. gate current required to trigger TJ = 125C 270 150 TJ = - 40C TJ = 25C mA 80 VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger Conditions TJ = 125C 0.25 V 6 mA Anode supply = 6V resistive load Anode supply = 6V resistive load TJ = 125o C, rated VDRM applied TJ = 125o C, rated VDRM applied Blocking Parameters IRK.71 IRRM Max. peak reverse and IDRM off-state leakage current IRK.91 Units 15 Conditions mA TJ = 125 oC, gate open circuit at VRRM , VDRM VINS 2500 (1 min) RMS isolation voltage dv/dt Max. critical rate of rise of off-state voltage (5) 50 Hz, circuit to base, all terminals V 3500 (1 sec) 500 shorted T J = 125 oC, linear to 0.67 VDRM , gate open circuit V/s (5) Available with dv/dt = 1000V/s, to complete code add S90 i.e. IRKT91/16AS90. Thermal and Mechanical Specifications Parameters IRK.71 TJ Junction operating temperature range Tstg Storage temp. range IRK.91 Units Conditions - 40 to 125 C - 40 to 125 RthJC Max. internal thermal resistance, junction 0.165 0.135 Per module, DC operation to case K/W RthCS Typical thermal resistance case to heatsink T Mounting torque 10% A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound 5 to heatsink busbar wt Mounting surface flat, smooth and greased 0.1 Nm 3 Approximate weight 110 (4) Case style gr (oz) TO-240AA JEDEC R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices IRK.71 IRK.91 www.irf.com Sine half wave conduction 180o 0.06 0.04 120o 0.07 0.05 90 o 0.09 0.06 60o 0.12 0.08 Rect. wave conduction 30 o 0.18 0.12 180o 0.04 0.03 120 o 0.08 0.05 90o 0.10 0.06 60o 0.13 0.08 30o 0.18 0.12 Units C/W 3 IRK.71, .91 Series Bulletin I27132 rev. I 09/04 Ordering Information Table Device Code IRK T 91 1 2 3 / 16 A S90 4 5 6 IRK.92 types With no auxiliary cathode 1 - 2 - Module type Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: * * Available with no auxiliary cathode. To specify change: 71 to 72 91 to 92 e.g. : IRKT92/16A etc. S90 = dv/dt 1000 V/s No letter = dv/dt 500 Vs Outline Table Dimensions are in millimeters and [inches] IRKT IRKH (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) IRKN IRKL (1) ~ K2 G2 (7) (6) G1 K1 (4) (5) (1) - (2) + + (3) K2 G2 (7) (6) G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.71, .91 Series IRK.71.. Series RthJC (DC) = 0.33 K/ W 120 110 Cond uction Angle 100 90 30 60 90 80 120 180 70 0 10 20 30 40 50 60 70 80 IRK.71.. Series R thJC (DC) = 0.33 K/ W 120 110 Cond uction Period 100 90 30 80 RMS Limit 40 Conduction Angle IRK.71.. Series Per Junction TJ = 125C 20 0 0 20 10 20 30 40 50 60 70 80 1200 1100 1000 900 700 80 100 IRK.71.. Series Per Junc tion 1 10 100 Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current www.irf.com 120 DC 180 120 90 60 30 120 100 80 RMS Limit 60 Conduc tion Period 40 IRK.71.. Series Per Junc tion TJ = 125C 20 0 0 20 40 60 80 100 120 Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At Any Ra ted Loa d Condition And With Rated VRRM App lied Following Surg e. Initial TJ= 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 800 60 Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 1300 40 140 Average On-state Current (A) 1400 DC Fig. 2 - Current Ratings Characteristics 80 1500 180 70 Fig. 1 - Current Ratings Characteristics 100 1600 60 90 120 Average On-state Current (A) 180 120 90 60 30 0 130 Average On-state Current (A) 120 60 Maximum Allowable Case Temperature (C) 130 Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Bulletin I27132 rev. I 09/04 1800 1600 1400 Maximum Non Rep etitive Surg e Current Versus Pulse Train Duration. Control Of Conduc tion May Not Be Ma intained . Initial TJ= 125C No Volta ge Reap plied Ra ted V RRMReap p lied 1200 1000 800 IRK.71.. Series Per Junction 600 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 5 IRK.71, .91 Series Bulletin I27132 rev. I 09/04 = 0. K/ W /W 1K K/ W ta el -D 150 SA 0. 5 W K/ 0. 4 W K/ 3 0. 200 R th 180 120 90 60 30 2 0. 0.7 K/ W R Maximum Total On-sta te Power Lo ss (W) 250 1K /W 100 Conduction Angle 1.5 K/ W IRK.71.. Series Per Mod ule TJ = 125C 50 3 K/ W 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Total RMSOutp ut Current (A) Fig. 7 - On-state Power Loss Characteristics 180 (Sine) 180 (Rec t) = 1 0. K/ W R 0. 3 300 lt a e -D 0. 2 W K/ 400 A hS 500 Rt Maximum Total Power Loss (W) 600 K/ W 0.5 K/ W 200 2 x IRK.71.. Series Single Phase Bridge Connected T J = 125C 100 0 0 20 40 60 1 K/ W 2 K/ W 0 80 100 120 140 160 180 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Total Output Current (A) Fig. 8 - On-state Power Loss Characteristics 700 R 600 SA th Maximum Total Power Loss (W) 800 500 120 (Rect) 400 0. 2 = 0. 1 K/ W K/ W -D el ta 0.3 K/ W 300 3 x IRK.71.. Series Three Pha se Brid ge Connected TJ = 125C 200 100 R 0.5 K/ W 1 K/ W 0 0 40 80 120 160 Total Output Current (A) 200 0 240 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.71, .91 Series 130 IRK.91.. Series RthJC (DC) = 0.27 K/ W 120 110 Cond uc tion Angle 100 90 30 60 90 120 80 180 70 0 20 40 60 80 100 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Bulletin I27132 rev. I 09/04 130 IRK.91.. Series R thJC (DC) = 0.27 K/ W 120 110 Conduc tion Period 100 90 30 90 120 0 20 RMS Limit 60 Conduc tio n Angle 40 IRK.91.. Series Per Junction TJ = 125C 20 0 0 20 40 60 80 100 Maximum Average On-state Power Loss (W) 80 40 60 80 100 120 140 160 Fig. 11 - Current Ratings Characteristics 180 DC 180 120 90 60 30 160 140 120 100 RMS Limit 80 Conduction Period 60 IRK.91.. Series Per Junc tion TJ = 125C 40 20 0 0 20 40 60 80 100 120 140 160 Average On-state Current (A) Average On-state Current (A) Fig. 12 - On-state Power Loss Characteristics Fig. 13 - On-state Power Loss Characteristics 1600 At Any Rated Loa d Condition And With Rated V RRM Applied Following Surg e. Initial TJ = 125C 1500 1400 @60 Hz 0.0083 s @50 Hz 0.0100 s 1300 1200 1100 1000 900 IRK.91.. Series Per Junction 800 700 1 10 100 Peak Half Sine Wave On-state Current (A) Maximum Avera ge On-sta te Power Loss (W) Peak Half Sine Wave On-state Current (A) 140 100 DC Average On-state Current (A) Fig. 10 - Current Ratings Characteristics 120 180 70 Average On-state Current (A) 180 120 90 60 30 60 80 1800 1600 1400 Ma ximum Non Repetitive Surg e Current Versus Pulse Train Duration. Control Of Cond uc tion Ma y Not Be Ma intained . Initial TJ= 125C No Voltage Reap p lied Ra ted VRRM Reap p lied 1200 1000 800 IRK.91.. Series Per Junction 600 0.01 0.1 1 Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N) Pulse Train Duration (s) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current www.irf.com 7 IRK.71, .91 Series Bulletin I27132 rev. I 09/04 IRK.91.. Series Per Mod ule TJ = 125C 0 0 40 80 120 160 200 R 100 a 0. 5K /W 0.7 K/ W 1K /W 1.5 K /W Conduc tion Angle 50 K/ W e lt -D 150 K/ W W K/ 200 0. 3 1 0. 250 0. 2 = 180 120 90 60 30 SA 300 R th Maximum Total On-state Power Loss (W) 350 3 K/ W 240 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Total RMSOutp ut Current (A) Fig. 16 - On-state Power Loss Characteristics 180 (Sine) 180 (Rect) = 1 0. 0. 2 W K/ 400 A hS 500 Rt K/ W ta el -D 0. 3K /W 300 R Maximum Total Power Loss (W) 600 0.5 K/ W 200 2 x IRK.91.. Series Single Phase Bridge Connected T J = 125C 100 1 K/ W 2 K/ W 0 0 40 80 120 160 200 0 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Amb ient Temperature (C) Fig. 17 - On-state Power Loss Characteristics 800 R 700 SA th Maximum Total Power Loss (W) 900 600 120 (Rect) 500 0. 1 0. 2K /W 400 K/ W -D el ta R 0.3 K/ W 300 3 x IRK.91.. Series Three Pha se Brid ge Connected TJ = 125C 200 100 0 = 0 40 80 120 160 200 Total Output Current (A) 240 0.5 K/ W 1 K/ W 0 280 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Fig. 18 - On-state Power Loss Characteristics 8 www.irf.com IRK.71, .91 Series Bulletin I27132 rev. I 09/04 1000 TJ= 25C 10 TJ= 125C IRK.71.. Series Per Junction 1 0.5 Maximum Reverse Rec overy Cha rge - Qrr (C) Instantaneous On-state Current (A) 100 1 1.5 2 2.5 3 3.5 100 TJ= 25C TJ= 125C 10 IRK.91.. Series Per Junction 1 0.5 4 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V) Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics 700 ITM = 200 A IRK.71.. Series IRK.91.. Series TJ = 125 C 600 Maximum Reverse Re covery Current - Irr (A) Instantaneous On-state Current (A) 1000 100 A 500 50 A 400 20 A 300 10 A 200 100 10 20 30 40 50 60 70 80 90 100 140 120 I TM = 200 A 100 A 100 50 A 80 20 A 10 A 60 40 20 10 Rate Of Fall Of On-state Current - di/ dt (A/ s) 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 21 - Recovery Charge Characteristics Transient Thermal Impedanc e Z thJC (K/W) IRK.71.. Series IRK.91.. Series TJ = 125 C Fig. 22 - Recovery Current Characteristics 1 Steady State Value: RthJC = 0.33 K/ W RthJC = 0.27 K/ W (DC Operation) IRK.71.. Series IRK.91.. Series 0.1 Per Junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 23 - Thermal Impedance Z thJC Characteristics www.irf.com 9 IRK.71, .91 Series Bulletin I27132 rev. I 09/04 Rectangular gate pulse a)Recommended load line for rated di/ dt: 20 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/ dt: 15 V, 40 ohms 10 tr = 1 s, tp >= 6 s (1) PGM (2) PGM (3) PGM (4) PGM = 200 W, tp = 300 s = 60 W, tp = 1 ms = 30 W, tp = 2 ms = 12 W, tp = 5 ms (a) (b) TJ = -40 C TJ = 125 C 1 TJ = 25 C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 IRK.71../ .91.. Series Frequenc y Limited by PG(AV) 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 24 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/04 10 www.irf.com