TPC817 SERIES
Taiwan Semiconductor
1 Version:C1612
200mW, 4 PIN DIP Phototransistor Photocoupler
FEATURES
● Current transfer ratio
(CTR: MIN.80% at IF=5mA, VCE=5V)
● High isolation voltage between input and output
(Viso=5000V rms)
● Creepage distance＞7.62mm
● UL Recognized File # E478892
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Programmable controllers
● System appliances, measuring instruments
● Telecommunication equipments
● Home appliances,such as fan heaters,etc
● Signal transmission between circuits of different potentials
and impedances
MECHANICAL DATA
● Case: DIP-4 , DIP-4M , SOP-4
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
KEY PARAMETERS
PARAMETER
VALUE
UNIT
CTR
80-600
%
VCEO
80
V
Ptot
200
mW
IC
50
mA
Viso
5000
Vrms
Package
DIP-4
DIP-4M
SOP-4
Configuration
Single Dice
TPC817 SERIES
Taiwan Semiconductor
2 Version:C1612
PARAMETER
SYMBOL
PART NUMBER
UNIT
Input
Forward current
IF
50
mA
Reverse voltage
VR
6
V
Power dissipation
P
70
mW
Output
Collector-emitter voltage
VCEO
80
V
Emitter-collector voltage
VECO
6
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Total power dissipation
Ptot
200
mW
Isolation voltage
Viso
5000
Vrms
Rated impulse isolation voltage
VIOTM
6000
V
Rated repetitive peak isolation voltage
VIORM
630
V
Operating temperature
Topr
-40 to +100
°C
Storage temperature
Tstg
-55 to +125
°C
Soldering temperature
Tsol
260
°C
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Input
Forward voltage
IF=20mA
VF
1.2
1.4
V
Reverse current
VR=4V
IR
10
μA
Terminal capacitance
V=0, f=1kHz
Ct
30
250
pF
Output
Collector dark current
VCE=20V,IF=0
ICEO
10-7
A
Collector-emitter
breakdown voltage
IC=0.1mA, IF=0
BVCEO
80
V
Emitter-collector
breakdown voltage
IE=10μA, IF=0
BVECO
6
V
Transfer
Characteristics
Collector current
IF=5mA, VCE=5V
IC
2.5
30
mA
Current transfer
ration(Note 1)
CTR
80
600
%
Collector-emitter
saturation voltage
IF=20mA, IC=1mA
VCE(sat)
0.1
0.2
V
Isolation resistance
DC500V,
40 to 60%RH
RISO
5x1010
1011
Ω
Floating capacitance
V=0, f=1MHz
Cf
0.6
1.0
pF
Cut-off frequency
VCE=5V, IC=2mA,
RL=100Ω, -3dB
fc
80
KHz
Response
time
Rise time
VCE=2V, IC=2mA,
RL=100Ω
tr
4
18
μs
Fall time
tf
3
18
μs
Notes:
1. Classification table of current transfer ratio is shown below
TPC817 SERIES
Taiwan Semiconductor
3 Version:C1612
RANK TABLE OF CURRENT TRANSFER RATIO, CTR
RANK MARK
MIN (%)
MAX (%)
A
80
160
B
130
260
C
200
400
D
300
600
ORDERING INFORMATION
PART NO.
(Note 1&2)
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
TPC817x
C9
G
DIP-4
100 / TUBE
TPC817Mx
C9
DIP-4M
(Leads with 0.4" spacing)
100 / TUBE
TPC817S1x
RA
SOP-4
2K / 13" Reel
Notes:
1. “x” defines CTR rank from “A” to “D”
2. Whole series with green compound
EXAMPLE P/N
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
TPC817A C9G
TPC817A
C9
G
Green compound
TPC817 SERIES
Taiwan Semiconductor
4 Version:C1612
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Forward Current vs.
Ambient Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Fig.3 Collector-Emitter Saturation Voltage vs
Forward Current
Fig.4 Forward Current vs.
Forward Voltage
0
10
20
30
40
50
60
-30 -15 015 30 45 60 75 90 105 120 135
0
50
100
150
200
-30 -15 015 30 45 60 75 90 105 120 135
0
1
2
3
4
5
6
0 5 10 15
IC=0.5mA
1mA
3mA
5mA
7mA
1
10
100
1000
0 0.5 1 1.5 2 2.5 3
-25°C
0°C
25°C
50°C
75°C
Collector Power Dissipation, Pc (mW)
Ambient Temperature, Ta (°C)
Collector-Emitter Saturation Voltage VCE(sat)
Forward Current IF(mA)
Forward Current IF(mA)
Forward Voltage VF (V)
Ambient Temperature, Ta (°C)
IF, Instantaneous Forward Current (mA)
TPC817 SERIES
Taiwan Semiconductor
5 Version:C1612
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 5 Current Transfer Ratio vs.
Forward Current
Fig.6 Collector Current vs.
Collector-Emitter Voltage
Fig.7 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage vs
Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
110 100
VCE=5V
0
10
20
30
0 1 2 3 4 5 6 7 8 9
5mA
10mA
20mA
IF=30mA
Pc(max)
0
50
100
150
-30 030 60 90 120
IF=5mA
VCE=5V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
-30 030 60 90 120
IF=20mA
IC=1mA
Collector Current Ic(mA)
Forward Current IF(mA)
Ambient Temperature Ta(°C)
Collector-Emitter Saturation
Voltage VCE(sat) (A)
Ambient Temperature Ta(°C)
Collector-Emitter Voltage VCE(V)
Current Transfer Ratio (%)
Relative Current Transfer Ratio (%)
TPC817 SERIES
Taiwan Semiconductor
6 Version:C1612
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 9 Collector Dark Current vs.
Ambient Temperature
Fig.10 Response Time vs.
Load Resistance
Fig.11 Frequency Response
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
-30 030 60 90
VCE=20V
0.1
1
10
100
1000
0.01 0.1 1 10 100
ts
td
tf
tr
IC=2mA
VCE=2V
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
0.1 1 10 100 1000
RL=10kΩ 1kΩ
100Ω
IC=2mA
VCE=5V
Response Time (μs)
Ambient Temperature Ta(°C)
Voltage Gain Av(dB)
Frequency f(kHz)
Load Resistance RL(kΩ)
Collector Dark Current ICEO(A)
TPC817 SERIES
Taiwan Semiconductor
7 Version:C1612
TEST CIRCUIT RESPONSE TIME
TEST CIRCUIT FOR FREQUENCY RESPONSE
TPC817 SERIES
Taiwan Semiconductor
8 Version:C1612
PACKAGE OUTLINE DIMENSION
DIP-4
DIM.
Unit(mm)
Min
Max
A
6.40
6.60
B
4.50
4.70
C
7.90
8.30
D
3.28
3.68
E
2∘
8∘
F
1.25 typ.
H
2.70
2.90
J
0.23
0.26
K
8.86
9.31
L
0.50 typ.
M
2.44
2.64
N
0.40 typ.
DIP-4M (Leads with 0.4" spacing)
DIM.
Unit(mm)
Min
Max
A
6.40
6.60
B
4.50
4.70
C
7.90
8.30
D
3.28
3.68
F
1.25 typ.
G
0.40 typ.
J
0.23
0.26
K
9.86
10.46
L
0.50 typ.
M
2.44
2.64
N
2.40
2.90
TPC817 SERIES
Taiwan Semiconductor
9 Version:C1612
PACKAGE OUTLINE DIMENSION
MARKING
DIM.
Unit(mm)
Min
Max
A
6.40
6.60
B
4.50
4.70
C
7.90
8.30
D
3.28
3.68
F
1.25 typ.
G
0.40 typ.
H
0.00
0.20
J
0.90
1.20
K
9.80
10.30
L
1.25 typ.
M
2.49
2.69
SOP-4
Notes：
817: Product type
B: CTR rank mark
YWW: Date code
TPC817 SERIES
Taiwan Semiconductor
10 Version:C1612
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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