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BAR89...
Silicon PIN Diode
• Optimized for antenna switches
in hand held applications
• Very low capacitance at zero volts reverse bias
at frequencies above 1GHz (typ. 0.19 pF)
• Low forward resistance (typ. 0.8Ω @ IF = 10mA)
• Very low signal distortion
• Pb-free (RoHS compliant) package
BAR89-02LRH
Type Package Configuration LS(nH) Marking
BAR89-02LRH TSLP-2-7 single, leadless 0.4 R
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR80 V
Forward current IF100 mA
Total power dissipation
Ts ≤ 133°C
Ptot 250 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 65 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
V(BR) 80 - - V
Reverse current
VR = 60 V
IR- - 50 nA
Forward voltage
IF = 10 mA
IF = 100 mA
VF
-
-
0.83
0.95
0.9
1.1
V
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
CT
-
-
-
-
0.25
0.25
0.19
0.18
0.35
-
-
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP
-
-
-
35
5
3.5
-
-
-
kΩ
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
-
3
1.2
0.8
-
-
1.5
Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
τ rr - 800 - ns
I-region width WI- 19 - µm
Insertion loss1)
IF = 1 mA, f = 1.8 GHz
IF = 5 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
IL
-
-
-
0.23
0.1
0.08
-
-
-
dB
Isolation1)
VR = 0 V, f = 0.9 GHz
VR = 0 V, f = 1.8 GHz
VR = 0 V, f = 2.45 GHz
ISO
-
-
-
19
14
11
-
-
-
1BAR89-02LRH in series configuration, Z = 50Ω
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Diode capacitance CT = ƒ (VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
0.1
0.15
0.2
0.25
0.3
0.35
0.4
pF
0.5
CT
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
-1
10
0
10
1
10
2
10
3
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100MHz
10 -2 10 -1 10 0 10 1 10 2 10 3
mA
IF
-1
10
0
10
1
10
2
10
3
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0 0.2 0.4 0.6 0.8 V1.2
VF
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40°C
+25°C
+85°C
+125°C
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BAR89...
Forward current IF = ƒ (TS)
BAR89-02LRH
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Permissible Puls Load RthJS = ƒ (tp)
BAR89-02LRH
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
-1
10
0
10
1
10
2
10
mA
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR89-02LRH
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
°C
tp
0
10
1
10
2
10
mA
IF
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Insertion loss IL = -|S21|2 = ƒ(f)
IF = Parameter
BAR89-02LRH in series configuration, Z = 50Ω
01234GHz 6
f
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
dB
0
|S21|
10mA
5mA
1mA
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Isolation ISO = -|S21|2 = ƒ(f)
VR = Parameter
BAR89-02LRH in series configuration, Z = 50Ω
01234GHz 6
f
-30
-25
-20
-15
-10
dB
0
|S21|
0 V
1 V
10 V
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BAR89...
Package TSLP-2-7
1
2
±0.05
0.6
1
2
±0.05
0.65
±0.035
0.25
1)
1
±0.05
0.05 MAX.
+0.01
0.39
-0.03
1) Dimension applies to plated terminal
Cathode
marking
1)
±0.035
0.5
Bottom viewTop view
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
For board assembly information please refer to Infineon website "Packages"
0.45
0.275
0.275
0.375
0.925
Copper Solder mask Stencil apertures
0.35
1
0.6
0.35
0.3
0.76
4
1.16
0.5
Cathode
marking
8
BAR90-02LRH
Type code
Cathode marking
Laser marking
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Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
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Life support devices or systems are intended to be implanted in the human body or
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