
ES1A – ES1J 1 of 3 © 2002 Won-Top Electronics
ES1A – ES1J
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly B
! Low Forward Voltage Drop, High Efficiency
! Surge Overload Rating to 30A Peak D
! Low Power Loss A
! Super-Fast Recovery Time F
! Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
! Case: Low Profile Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR50 100 150 200 300 400 600 V
RMS Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 V
Average Rectified Output Current @TL = 120°C IO1.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 30 A
Forward Voltage @IF = 1.0A VFM 0.95 1.25 1.7 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 5.0
500 µA
Reverse Recovery Time (Note 1) trr 35 nS
Typical Junction Capac itance (Note 2) Cj10 pF
Typical Thermal Resistance (Not e 3) RJL 35 K/W
Operating and Storage Temperature Range Tj, TSTG -65 t o +150 °C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse volt age of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
WTE
POWER SEMICONDUCTOR S
SMA/DO-214AC
Dim Min Max
A2.50 2.90
B4.00 4.60
C1.40 1.60
D0.152 0.305
E4.80 5.28
F2.00 2.44
G0.051 0.203
H0.76 1.52
All Dimensions in mm