1
Item Symbol Ratings Unit
Drain-source voltage V DS 450
Continuous drain current ID±10
Pulsed drain current ID(puls] ±40
Gate-source voltage VGS ±35
Repetitive or non-repetitive IAR *2 10
Maximum Avalanche Energy EAS *1 86.2
Max. power dissipation PD50
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK2638-01MR FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-2S Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=450V
VGS=±35V
ID=5A VGS=10V
ID=5A VDS=25V
VCC=300V ID=10A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 2.5
62.5 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100 µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
A
mJ
W
°C
°C
*1 L=1.58mH, Vcc=45V *2 Tch=150°C
450
3.5 4.0 4.5
10 500
0.2 1.0
10 100
0.58 0.65
36
950 1450
180 270
80 120
25 40
70 110
70 110
50 80
10 1.1 1.65
400
5.0
-55 to +150 <
Gate(G)
Source(S)
Drain(D)
Outline Drawings
TO-220F
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Not recommend for new design.
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2
012345678910
10-2
10-1
100
101
Typical transfer characteristic
ID [A]
VGS [V]
0 102030
0
5
10
15
20
25
30
7V
5V
10V
8V
6.5V
6V
5.5V
VGS=20V
Typical output characteristics
ID [A]
VDS [V]
100101102103
10-1
100
101
1µs
t=0.01µs
Safe operating area
DC
100ms
10ms
1ms
100µs
10µs
VDS [V]
ID [A]
Characteristics
2SK2638-01MR FUJI POWER MOSFET
0 50 100 150
0
10
20
30
40
50
60
70
Power Dissipation
PD=f(Tc)
PD [W]
Tc [ oC]
t
T
D=
t
T
ID=f(VDS):D=0.01,Tc=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C
gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C
10-1 100101
10-1
100
101
Typical forward transconductance
gfs [s]
ID [A]
0 50 100 150
0
20
40
60
80
100
Avalanche energy derating
Eas [mJ]
Starting Tch [oC]
Eas=f(starting Tch):Vcc=45V,IAV=10A
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3
2SK2638-01MR FUJI POWER MOSFET
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
max.
typ.
Drain-source on-state resistance
RDS(on) [ Ω ]
Tch [oC]
RDS(on)=f(Tch):ID=5A,VGS=10V
-50 0 50 100 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
min.
typ.
max.
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
VGS(th) [V]
Tch [oC]
0 20 40 60 80 100 120 140
0
50
100
150
200
250
300
350
400
Vcc=90V
225V
360V
90V
225V
Vcc=360V
VGS [V]
VDS [V]
Typical gate charge characteristic
Qg [nC]
0
5
10
15
20
25
30
35
40
VGS=f(Qg):ID=10A,Tch=25°C
10-2 10-1 100101102
10p
100p
1n
10n
Crss
Coss
Ciss
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-2
10-1
100
101
Tch=25oC typ.
Forward characteristic of reverse of diode
IF [A]
VSD [V]
IF=f(VSD):80µs Pulse test,VGS=0V
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4
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
101
D=0.5
0.2
0.02
0.05
0.1
0.01
0
Transient thermal impedande
Zthch=f(t) parameter:D=t/T
Zthch-c [K/W]
t [s]
2SK2638-01MR FUJI POWER MOSFET
t
T
D=
t
T
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Not recommend for new design.
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