VUO68-08NO7 3~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 70 A I FSM = 300 A 3~ Rectifier Bridge Part number VUO68-08NO7 K N H A D Features / Advantages: Applications: Package: ECO-PAC1 Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 9 mm Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130322a VUO68-08NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 800 V IR reverse current VF VR = 800 V TVJ = 25C 40 A TVJ = 150C 1.5 mA TVJ = 25C 1.15 V 1.50 V 1.12 V 20 A IF = 60 A IF = 20 A IF = 60 A TVJ = 125 C TC = 105C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.39 V T VJ = 150 C 70 A TVJ = 150 C 0.82 V d= for power loss calculation only Ptot typ. VR = 800 V IF = forward voltage drop min. 12.2 m 1.1 K/W 0.4 K/W TC = 25C 110 W t = 10 ms; (50 Hz), sine TVJ = 45C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45C 450 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 440 As TVJ = 150 C 325 As 315 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20130322a VUO68-08NO7 Package Ratings ECO-PAC1 Symbol I RMS Definition Conditions RMS current per terminal min. Tstg storage temperature T VJ virtual junction temperature mounting torque 1.5 typ. max. 100 Unit A -40 125 C -40 150 C 2 Nm Weight MD d Spp/App d Spb/Apb VISOL 19 creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 10.0 mm 3000 V 2500 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL 1 mA Logo Made in Germany YYCW Lot# XXX XX-XXXXX Part Number Circuit Diagram Date Code Ordering Standard Part Number VUO68-08NO7 Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Box Quantity 25 Code No. 483303 T VJ = 150 C Rectifier V 0 max threshold voltage 0.82 R 0 max slope resistance * 11 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Marking on Product VUO68-08NO7 V m Data according to IEC 60747and per semiconductor unless otherwise specified 20130322a VUO68-08NO7 Outlines ECO-PAC1 K IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved N H A D Data according to IEC 60747and per semiconductor unless otherwise specified 20130322a VUO68-08NO7 Rectifier 80 300 60 250 IF 50 Hz 0.8 x V RRM 1000 VR = 0 V 2 IFSM It TVJ = 45C 200 40 [A] [A] TVJ = 45C 2 [A s] TVJ = 150C 150 20 TVJ = 125C 150C 0 0.4 TVJ = 25C 0.8 1.2 1.6 TVJ = 150C 100 10-3 2.0 100 10-2 10-1 10 t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 30 25 2 100 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 35 DC = 0.6 KW 0.8 KW 20 [W] 1 VF [V] 40 Ptot 100 1 KW 2 KW 4 KW 8 KW 0.5 0.4 IF(AV)M60 0.33 0.17 [A] 15 1 80 0.08 40 10 20 5 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 0 150 25 50 TA [C] IdAVM [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 1.2 1.0 Constants for ZthJC calculation: 0.8 ZthJC 0.6 [K/W] 0.4 0.2 i Rth (K/W) ti (s) 1 0.05070 0.004 2 0.163 0.0025 3 0.2805 0.0035 4 0.363 0.02 5 0.2228 0.15 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130322a