DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3225 TO-251 2SK3225-Z TO-252 designed for high current switching applications. FEATURES * Low On-state Resistance RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 m MAX. (VGS = 4.0 V, ID = 17 A) * Low Ciss : Ciss = 2100 pF TYP. * Built-in Gate Protection Diode * TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) 20 V Gate to Source Voltage VGSS(DC) +20, -10 V ID(DC) 34 A ID(pulse) 136 A Total Power Dissipation (TC = 25C) PT 40 W Total Power Dissipation (TA = 25C) PT 1.0 W Channel Temperature Tch 150 C Tstg -55 to +150 C IAS 15 A EAS 22 mJ Drain Current (DC) Drain Current (Pulse) Note1 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 (TO-252) Note1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13798EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark shows major revised points. (c) 1998, 2000 2SK3225 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 17 A 13 18 m RDS(on)2 VGS = 4.0 V, ID = 17 A 18 27 m VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 17 A 13 27 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 A Gate to Source Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A Input Capacitance Ciss VDS = 10 V 2100 pF Output Capacitance Coss VGS = 0 V 550 pF Reverse Transfer Capacitance Crss f = 1 MHz 220 pF Turn-on Delay Time td(on) ID = 17 A 32 ns tr VGS = 10 V 300 ns td(off) VDD = 30 V 110 ns tf RG = 10 140 ns Total Gate Charge QG ID = 34 A 45 nC Gate to Source Charge QGS VDD = 48 V 7 nC Gate to Drain Charge QGD VGS = 10 V 13 nC Gate to Source Cut-off Voltage Rise Time Turn-off Delay Time Fall Time Body Diode Forward Voltage S VF(S-D) IF = 34 A, VGS = 0 V 0.94 V Reverse Recovery Time trr If = 34 A, VGS = 0 V 60 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 95 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 D.U.T. L RL PG. 50 VDD VGS = 20 0 V RG PG. VGS VGS Wave Form 0 VDD 90% ID IAS ID VGS 0 ID Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 VDD 10% 0 10% Wave Form VDD PG. 90% BVDSS VDS ID 90% 10% Data Sheet D13798EJ3V0DS tr td(off) td(on) ton tf toff 2SK3225 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 20 40 60 80 60 50 40 30 20 10 0 100 120 140 160 20 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C 40 FORWARD BIAS SAFE OPERATING AREA 1000 Pw d ite ) im 0 V )L 1 n = o ID(DC) S S( R D t VG (a =1 10 0 s 1m 0 s s 10 10 ms DC 1 TC = 25C 0.1 Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A ID(pulse) 100 Rth(ch-A)= 125 C/W 100 10 Rth(ch-C)= 3.13 C/W 1 0.1 0.01 0.001 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13798EJ3V0DS 3 2SK3225 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed Pulsed 100 ID - Drain Current - A ID - Drain Current - A 200 TA = -50C 25C 75C 150C 10 1 160 120 VGS = 10 V 80 VGS = 4.0 V 40 0.1 0 1 2 3 4 5 0 6 TA = 150C 75C 25C -50C 1 VDS = 10 V Pulsed 10 100 RDS(on) - Drain to Source On-state Resistance - m ID - Drain Current - A 4 RDS(on) - Drain to Source On-state Resistance - m 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 VGS = 4.0 V 20 10 V 10 0 1 10 100 ID = 17 A 10 0 5 10 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 30 Pulsed 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1000 VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S 100 1 4 3 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.1 0.1 2 1 0 VGS - Gate to Source Voltage - V VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 ID - Drain Current - A 0 -50 0 50 100 Tch - Channel Temperature - C Data Sheet D13798EJ3V0DS 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 40 ISD - Diode Forward Current - A VGS = 4.0 V 30 20 VGS = 10 V 10 0 ID = 17 A -50 0 50 100 Pulsed 100 VGS = 10 V VGS = 0 V 10 1 0.1 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS Ciss 1000 Coss Crss 100 10 0.1 1 10 1000 tf td(off) 100 td(on) 10 tr VDD = 30 V VGS = 10 V RG = 10 1 0.1 100 80 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A / s VGS = 0 V 100 10 1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 1 VDS - Drain to Source Voltage - V 1000 1.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - C 10000 1.0 0.5 100 ID = 34 A VGS = 10 V 60 16 14 12 VDD = 48 V 30 V 12 V VGS 10 8 40 6 4 20 2 VDS 0 IF - Drain Current - A 20 40 60 80 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m 2SK3225 0 QG - Gate Charge - nC Data Sheet D13798EJ3V0DS 5 2SK3225 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 IAS = 15 A 10 EAS =2 2m J 1.0 RG = 25 VDD = 30 V VGS = 20 V 0 V 0.1 Starting Tch = 25C 10 100 120 100 80 60 40 20 1m 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C L - Inductive Load - H 6 VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 15 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 Data Sheet D13798EJ3V0DS 2SK3225 PACKAGE DRAWINGS (Unit : mm) 1)TO-251 (MP-3) 2)TO-252 (MP-3Z) 1.10.2 +0.2 +0.2 0.5-0.1 0.5-0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 2.30.2 1.0 MIN. 1.8TYP. 0.50.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.10.2 13.7 MIN. 3 5.50.2 2 7.0 MAX. 1.60.2 1 4 +0.2 6.50.2 5.00.2 1.5-0.1 0.50.1 4 5.50.2 10.0 MAX. 5.00.2 2.0 MIN. +0.2 2.30.2 1.5-0.1 6.50.2 EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13798EJ3V0DS 7 2SK3225 * The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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