High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B22N300 C2 C1 G1 G2 E2C4 E1C3 (Electrically Isolated Tab) VCES = 3000V IC90 = 22A VCE(sat) 2.7V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings VCES TJ = 25C to 150C 3000 V VCGR TJ = 25C to 150C, RGE = 1M 3000 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 38 A IC90 TC = 90C 22 A ICM TC = 25C, 1ms 165 A SSOA (RBSOA) VGE = 15V, TVJ = 125C, RG = 15 Clamped Inductive Load TSC (SCSOA) VGE = 15V, TJ = 125C, RG = 52, VCE = 1500V, Non-Repetitive PC TC G4 E3E4 C1 G1 E1C3 G3 Isolated Tab E2C4 G2 C2 G3 ICM = 180 VCES 1500 A V 10 s 150 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features 300 260 C C 50..200 / 11..45 N/lb 4000 V~ 8 g E1C3 G1 C1 = 25C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 minute Weight G = Gate C = Collector Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 3000 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 22A, VGE = 15V, Note 1 2.2 TJ = 125C 2.7 E = Emitter Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages V Note 2, TJ = 125C (c) 2018 IXYS CORPORATION, All Rights Reserved E3E4 G4 5.0 V 35 1.5 A mA 100 nA 2.7 V V Low Gate Drive Requirement High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits DS100627A(5/18) MMIX4B22N300 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 22A, VCE = 10V, Note 1 13 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg(on) Qge IC = 22A, VGE = 15V, VCE = 1500V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25C IC = 22A, VGE = 15V VCE = 960V, RG = 15 Resistive Switching Times, TJ = 125C IC = 22A, VGE = 15V VCE = 960V, RG = 15 RthJC RthCS RthJA 22 S 2200 pF 85 pF 30 pF 110 nC 13 nC 45 nC 46 ns 360 ns 205 ns 1820 ns 43 ns 700 ns 220 ns 1650 ns 0.83 0.05 30 C/W C/W C/W Reverse Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VF trr IRM QRM Characteristic Values Min. Typ. Max IF = 22A, VGE = 0V, Note 1 2.7 IF = 11A, VGE = 0V, -diF/dt = 100A/s VR = 100V, VGE = 0V V 1.4 s 30 A 21 C Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Additional provisions for lead-to-lead voltage isolation are required at VCE > 1200V. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX4B22N300 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 44 VGE = 25V 15V 11V 40 36 32 15V 200 13V 9V 28 I C - Amperes I C - Amperes VGE = 25V 21V 19V 17V 250 24 20 7V 16 150 11V 100 12 9V 8 50 4 5V 7V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 44 1.8 VGE = 25V 19V 15V 13V 11V I C - Amperes 32 30 VGE = 15V 1.6 9V VCE(sat) - Normalized 36 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 40 20 VCE - Volts VCE - Volts 28 24 7V 20 16 12 8 I C = 44A 1.4 1.2 I C = 22A 1.0 I C = 11A 0.8 4 5V 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 70 6 TJ = 25C 60 5 I C - Amperes VCE - Volts 50 4 I C = 44A 3 22A 40 30 20 o TJ =125 C 2 o 25 C 10 11A 1 o - 40 C 0 6 7 8 9 10 11 12 13 VGE - Volts (c) 2018 IXYS CORPORATION, All Rights Reserved 14 15 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 MMIX4B22N300 Fig. 8. Gate Charge Fig. 7. Transconductance 16 32 o TJ = - 40 C VCE = 1500V 14 28 I C = 22A I G = 10mA 12 24 o 20 VGE - Volts g f s - Siemens 25 C o 125 C 16 12 10 8 6 8 4 4 2 0 0 10 20 30 40 50 60 0 70 0 I C - Amperes 10 20 30 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 10. Capacitance Fig. 9. Forward Voltage Drop of Intrinsic Diode 10,000 70 f = 1 MHz o TJ = 25 C J 60 o Capacitance - PicoFarads 125 C 50 I F - Amperes 40 40 30 VGE = 0V 20 C ies 1,000 Coes 100 VGE = 15V 10 C res 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 10 5.5 0 5 10 15 20 VF - Volts 25 30 35 40 VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 200 180 160 D = 0.5 Z (th)JC - K / W I C - Amperes 140 120 100 80 D = 0.2 0.1 D = 0.1 D = tp / T D = 0.05 60 tp o TJ = 125 C 40 D = 0.01 0 300 600 900 T D = 0.02 RG = 15 dv / dt < 10V / ns 20 1200 1500 1800 2100 2400 2700 3000 0.01 0.000001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.00001 Single Pulse 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 MMIX4B22N300 o o Fig. 13. Forward-Bias Safe Operating Area @ T C = 25 C Fig. 14. Forward-Bias Safe Operating Area @ T C = 75 C 1000 1000 VCE(sat) Limit VCE(sat) Limit 10 10 25s 100s 1 I C - Amperes 100 I C - Amperes 100 25s 100s 1 1ms 1ms 10ms 0.1 o 0.1 o TJ = 150 C TJ = 150 C 10ms o o TC = 25 C Single Pulse TC = 75 C Single Pulse 100ms DC 0.01 DC 0.01 1 10 100 1,000 VCE - Volts (c) 2018 IXYS CORPORATION, All Rights Reserved 10,000 1 10 100 1,000 100ms 10,000 VCE - Volts IXYS REF: MMIX4B22N300(5P) 03-10-14-A MMIX4B22N300 Package Outline IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.