SIEMENS FEATURES Very High CTR at [-=1 MA, Ve_50.5 - SFH606-2, 63-125% SFH608-3, 100-200% SFH608-4, 160-320% SFH608-5, 250-500% Specifled Minimum CTR at I-=0.5 mA, Veg=1.5 V: 232% (typ. 120%) Good CTR Linearity with Forward Current Low CTR Degradation High Collector-Emitter Voltage Voe5=55 V Isolation Test Voltage: 5300 VACRys Low Current Input Low Coupling Capacitance High Common Mode Transient Immunity Phototransistor Optocoupler In 6 Pin DIP Package Fleld Effect Stable: TRIOS* AVDE 0884 Available with Option 1 Underwriters Lab File #E52744 Applications - Telecommunications Industrial Controls - Office Machines Microprocessor System Interfaces DESCRIPTION The SFH 608 is an aptocoupier designed for high current transfer ratio at low input currents with the output transistor saturated. This makes the device ideal for iow current switching applications. The SFH6068 is packaged in a six pin plastic DIP. SFH 608 PHOTOTRANSISTOR, 5.3 KV, TRIOS LOW CURRENT OPTOCOUPLER Package Dimensions in Inches (mmm) Pin One |G. BL Bl Anode [7 | [6 Base 248 8 30) ly 256 [6.50 Cathode (2 | \ 16 |Collactor 4) lp! Is nc | 4 ]Ernitter 395 (8,50) 343 (6.70) 300 (7.62) i: - >| (1.00) | yp. | min, 1130 (3.30) | + 1506.81) i yp \. a) 18 ye. / Ls i0 42.79 .020 (051) min. o10425) {180981 018 (045) |!|_..031 (0.80) Hh ora (a5) { 022 (0.55) ~ 035 {0.80} J 900 (7.62) ~-=t.100 (2.54) typ. "347 (6.82) Maxlmum Ratings (T,=25C) Emitter Reverse Voltage .......... DC Forward Currant .... Surge Forward Current (tos10 ys) . Total Power Dissipation Datector Collector-Ernitter Voltage ... Collector-Base Voltage Emitter-Base Voltage Collector Current ......... Surge Collactor Current (tos7 ms}. Total Power Dissipation .. : Isolation Test Voltage (betwean emitter and detectorreferred to climate DIN 40046 part 2 Nov. 74) {t=1 sec.).... v 5900 VACaMs Creapage ... 2? mn Clearance .. doe centeeicesereestreensererateeas 27mm Comparative Tracking index. per DIN IEC 11240E 0303, pant ee TPS isolation Resistance Vig=S00 V, T,=28O vee Vig 2500 V. Tye 100C ooo ccccccccccccsssrmesssecsssceesssssssatsneesseesesnrecees 210" 9 Storage Temperature Range ...... -55S to + 150C Operating Tamperature Range .. ~55C to + 100C Junction Temperatura ....... . 100C Soldering Temperature {max. 10 sec., dip soldering: distance to seating PlanG21.5 MIM) eect es LOE *TRIOSTRansparent [On Shield 6-231 Optocouplers (Optisolators} unCharacteristics (T,=25C, unless otharwise spacified) Unit Condition Symbol Emitter Forward Voltage Ve Reverse Voltage Ve Raverse Current la Capacitance Co Thermal Resistance Rina Detector Cotlector-Emitter Vollage Voea Emitter-Base Voltage VeBo Capacitance Cce Capacitance Cop Capacitance Cea Thermal Resistance Rina Package Coupling Capacitance Cp Coupling Transter Ratio SFH 605-2 lo/le SFH 608-3 lofle SFH 608-4 lefle SFH 608-5 lofle Collector-Emitter Saturation Voltage SFH 608-2 Veesat SFH 608-3 Versat SFH 608 4 Veesat SFH 608-5 Veesat Collector-Emitier Leakage Current leeo 470 Typ. 1.1 15) 255 aT 10 16 10 500 0.60 63-125 75 (2 92) 100-200 120 (2 50) 160-320 200 (2 80) 250-600 300 (2 125) 0.25 (s 0.4) 0.25 (< 0.4) 0.25 (s 0.4) 0.25 (5 0.4) 10 (5 200) V pA pF KAY a af at af af af af af oat <t [p=5 MA lg= 10 pA V_=6V Vge0V, [= 1 MHz loge 10 pA lep=10 pA Voe=5 . fat MHz Vope5 V, fe1 MHz VegeS V, f=1 MHz Ip=t mA, Veg=0.5 V Ip-0.5 MA, Vog=1.5 Iga 1 MA, Vpp=0.5 V [p=O.5 MA, Voe= 1.5 jpe1 MA, Vop=0.5 V IpsO.5 MA, Voe=15V p21 mA, Vop=0.5 V Ip=0.5 MA, Voe=1.5 V [c=0.92 MA, [p= i mA [c= 0.5 mA, [p= 1 mA ic= OB MA, |-=1 mA [p= 1.25 mA, Ip=1 mA Vge=10 Io=2 MA (to adjust by Ip), ARL=100 , T,=25C, Vocg=5 Description Symbol Values Unit Turn-On Time ton 8 ws Rise Tima tg 5 ws Turn-Off Time torr 7.5 ys Fail Time te ? HS Figura 1. Switching times T,=25C, Ip=1 MA, Vee=5 V. fon, tay torr: te. =f Py} 103 1a? 10? 103 1 on tot # Figure 2, Current tranafer ratio (typ.) Voe=0.6 V, CTRENT,, bp} 200 cm * 160 120 9 40-20 0 20 40 60 ane e100 Figure 3. Current transfer ratio (typ.) Vog=1.5 V, CTR=f(Ta, Ie} 240 4 ene 200 160 120 80 40 40.5ma 0 -40-20 0 20 40 60 *C 100 t, 5-232 SFH 608Figure 4. Clode forward voltage (typ.} T,=25C, Vexftl) 12 a5 LIS { Ww At 1,05 Figure 7. Output characteristics (typ.) Tae25G, Ice=flVce. Ip) an oe oT er I rH rn Ll MA MN TT UI TI UT rh Pr A AMT cl Figure 5. Dlode forward voltage (typ.) Ip =1 mA, Ve=f(T,) 1.2 Ty 113 Py vr I 1.08 h, 0.95 N 9. N a8 ~40 -20 0 70 40 60 C 100 A Figure 8. Permissible forward current diode I-=f(T,) 100 mA Figure 6. Output characteristics (typ.) Ta228C, Ioe=t(Voe, Ip) Oa UA wean AR vo UM a ot fee UTTAR tats 2S LUT il il Ar a 2a LUMI | ch UM CUT RATT = AT At CU UI MTT TTT sme iL A fi} TT UT TTT 3 o UL or? 107" #0" vn? Figure 9. Permiselble power dissipation Pio7=fiT,) 200 m ee rs il ne ul 150 125 Tronslstor 100 75 CT COME Ya ih 3 Cri iat muni! ol ey i TTT o a 1? 0! tot st! vt? 0 25 50 78 C 100 a 25 50 % C 100 Neg rh, i?t, Figure 10. Transistor capacitance Figura 11. Collactor-emitter leakage (oe) Tazo" tt fae Coe=fVoe) current Ip=0, Voe=10 Y, Iceo=f(Ta} cat (ce). Sepa t (Vea 50 SHO01125 104 LAM 7 co a TT he (LST Lt yi u te A TTA UT 1 CUM INT I Sat el INU TY UY a id tort oe 0910! 10? o 25 50 73 C100 oe Mx i, SFH 608 -233