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Copyright 2012 Rev. 1
For Footnotes refer to the last page
SCF2N6796T2
Electrical Characteristics @ TJ 25°C (unless otherwise specific)
PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
BVDSS Drain to Source Breakdown
Voltage 100 - - V VGS = 0 V, ID = 1.0 mA
ΔBVDSS/ΔTJ Temperature Coecient of
Breakdown Voltage - 0.10 - V/°C Reference to 25 °C, ID = 1.0 mA
RDS(ON) Stac Drain to Source On-State
Resistance
- - 0.180
Ω
VGS = 10 V, ID = 5.0 A (4)
- - 0.195 VGS = 10 V, ID = 8.0 A (4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250 µA
gsf Forward Transconductance 3.0 - - S(Ʊ) VDS = 15 V, IDS = 5.0 A (4)
IDSS Zero Gate Voltage Drain Current
- - 25
µA
VDS = 80 V, VGS = 0 V
- - 250 VDS = 80 V, VGS = 0 V, Tj = 125 °C
IGSSF Gate to Source Leakage Forward 100 nA VGS = 20 V
IGSSR Gate to Source Leakage Reverse -100 nA VGS = -20 V
Qg Total Gate Charge 12.8 - 28.51
nC VGS = 10 V, ID = 8.0 A , VDS = 50 V Qgs Gate to Source Charge 1.0 - 6.34
Qgd Gate to Drain (Miller) Charge 3.8 - 16.59
Td(on) Turn On Delay Time - - 30
ns VDD = 50 V, ID = 8.0 A, RG = 7.5 Ω
Tr Rise Time - - 75
Td(o) Turn O Delay Time - - 40
Tf Fall me - - 45
CISS Input Capacitance - - -
pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz
COSS Output Capacitance - - -
CRSS Reverse Transfer Capacitance - - -
Source-Drain Diode Rating and Characteristics
PARMETER MIN TYP MAX UNITS TEST CONDITIONS
IS Connuous Source Current (Body Diode) - - 8.0 A
ISM Pulse Source Current (Body Diode) - - 32 A
VSD Diode Forward Voltage - - 1.5 V Ti = 25 °C, IF = 8.0 A, VGS = 0 V (4)
Trr Reverse Recovery Time - - 300 nS Ti = 25 °C, IF = 8.0 A, di/dt < 100 A/
µS, VDD ≤ 50 V (4)