333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900
www.semicoa.com sales@semicoa.com
Copyright 2012 Rev. 1
FEATURES
Available in JANTX and JANTXV equivalent levels
RDS(ON) < 180 mΩ
Simple Drive Requirements
Low Gate Charge
POWER MOSFET
FOR RUGGED ENVIORNMENTS
DESCRIPTION
SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliabil-
ity. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be
used for ground based telecommunications, vehicles, ships, weapon systems and other application where fail-
ure is not an option.
SCF2N6796T2
JANTX2N6796
JANTXV2N6796
REF:MIL-PRF-19500/557
Ease of Paralleling
Hermecally Sealed
Die Available
For footnotes refer to the last page
N-Channel
100 Volt
< 0.180 Ohms
8 Amp
ABSOLUTE MAXIMUM RATINGS
TO-205AF / TO-39
PARAMETER UNITS
lD @ VGS = 10 V, TC = 25° C Connuous Drain Current 8.0
A
lD @ VGS = 10 V, TC = 100° C Connuous Drain Current 5.0
IDM Pulsed Drain Current (1) 32
PD@ TC = 25° C Max Power Dissipaon 25 W
Linear Derang Factor 0.2 W/°C
VGS Gate to Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (2) 75 mJ
IAR Avalanche Current (1) - A
TJ
TSTG
Operang Juncon
Storage Temperature Range
-55 to 150 °C
Lead Temperature 300 °C
Weight O.98 typical g
333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900
www.semicoa.com sales@semicoa.com
Copyright 2012 Rev. 1
For Footnotes refer to the last page
SCF2N6796T2
Electrical Characteristics @ TJ 25°C (unless otherwise specific)
PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
BVDSS Drain to Source Breakdown
Voltage 100 - - V VGS = 0 V, ID = 1.0 mA
ΔBVDSS/ΔTJ Temperature Coecient of
Breakdown Voltage - 0.10 - V/°C Reference to 25 °C, ID = 1.0 mA
RDS(ON) Stac Drain to Source On-State
Resistance
- - 0.180
Ω
VGS = 10 V, ID = 5.0 A (4)
- - 0.195 VGS = 10 V, ID = 8.0 A (4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250 µA
gsf Forward Transconductance 3.0 - - S(Ʊ) VDS = 15 V, IDS = 5.0 A (4)
IDSS Zero Gate Voltage Drain Current
- - 25
µA
VDS = 80 V, VGS = 0 V
- - 250 VDS = 80 V, VGS = 0 V, Tj = 125 °C
IGSSF Gate to Source Leakage Forward 100 nA VGS = 20 V
IGSSR Gate to Source Leakage Reverse -100 nA VGS = -20 V
Qg Total Gate Charge 12.8 - 28.51
nC VGS = 10 V, ID = 8.0 A , VDS = 50 V Qgs Gate to Source Charge 1.0 - 6.34
Qgd Gate to Drain (Miller) Charge 3.8 - 16.59
Td(on) Turn On Delay Time - - 30
ns VDD = 50 V, ID = 8.0 A, RG = 7.5 Ω
Tr Rise Time - - 75
Td(o) Turn O Delay Time - - 40
Tf Fall me - - 45
CISS Input Capacitance - - -
pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz
COSS Output Capacitance - - -
CRSS Reverse Transfer Capacitance - - -
Source-Drain Diode Rating and Characteristics
PARMETER MIN TYP MAX UNITS TEST CONDITIONS
IS Connuous Source Current (Body Diode) - - 8.0 A
ISM Pulse Source Current (Body Diode) - - 32 A
VSD Diode Forward Voltage - - 1.5 V Ti = 25 °C, IF = 8.0 A, VGS = 0 V (4)
Trr Reverse Recovery Time - - 300 nS Ti = 25 °C, IF = 8.0 A, di/dt < 100 A/
µS, VDD ≤ 50 V (4)
333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900
www.semicoa.com sales@semicoa.com
Copyright 2012 Rev. 1
TO-205 AF Case Outline and Dimensions
Footnotes:
1. Repeve Rang: Pulse width limited by maximum juncon temperature
2. VDD = 25 V starng TJ = 25 °C, Peak IL = 8.0 A
3. ISD ≤ 8.0 A, di/dt ≤ 140 A/µS, VDD ≤ 100 V, Tj ≤ 150°C, Rg = 7.5Ω
4. Pulse width ≤ 300 µS; Duty Cycle ≤ 2%
Visit us at www.semicoa.com for sales and contact information.
Data and specification subject to change without notice.
SCF2N6796T2
Symbol
Dimensions
Inches Millimeters
Min Max Min Max
CD .305 .335 7.75 8.51
CH .160 .180 4.07 4.57
HD .335 .370 8.51 9.40
LC .200 typ 5.08 typ
LD .016 .021 0.41 0.53
LL .500 .750 12.70 19.05
LU .016 .019 0.41 0.48
L1 .050 1.27
L2 .250 6.35
P .100 2.54
Q .050 1.27
TL .029 .045 0.74 1.14
TW .028 .034 0.71 0.86
r .010 0.25
α 45° TP 45° TP
Pin Assignment
Lead 1 Source
Lead 2 Gate
Lead 3 Drain