APT2X60D60J - Microsemi - Datasheet.Directory

PRODUCT BENEFITS

• Low Losses

• Low Noise Switching

• Cooler Operation

• Higher Reliability Systems

• Increased System Power

Density

PRODUCT FEATURES

• Ultrafast Recovery Times

• Soft Recovery Characteristics

• Popular SOT-227 Package

• Low Forward Voltage

• High Blocking Voltage

• Low Leakage Current

PRODUCT APPLICATIONS

• Anti-Parallel Diode

-Switchmode Power Supply

-Inverters

• Free Wheeling Diode

-Motor Controllers

-Converters

• Snubber Diode

• Uninterruptible Power Supply (UPS)

• Induction Heating

• High Speed Rectiﬁers

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

APT2X61D60J 600V 60A

APT2X60D60J 600V 60A

053-6005 Rev G 6-2006

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speciﬁed.

New Diode Data Sheet By Darel Bidwell

Anti-Parallel Parallel

2

1

32 3

41 4

APT2X60D60J APT2X61D60J

STATIC ELECTRICAL CHARACTERISTICS

Symbol

VF

IRM

CT

UNIT

Volts

µA

pF

MIN TYP MAX

1.6 1.8

1.9

1.4

250

500

90

Characteristic / Test Conditions

Forward Voltage

Maximum Reverse Leakage Current

Junction Capacitance, VR = 200V

IF = 60A

IF = 120A

IF = 60A, TJ = 125°C

VR = 600V

VR = 600V, TJ = 125°C

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current (TC = 106°C, Duty Cycle = 0.5)

RMS Forward Current (Square wave, 50% duty)

Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)

Operating and StorageTemperature Range

Symbol

VR

VRRM

VRWM

IF(AV)

IF(RMS)

IFSM

TJ,TSTG

UNIT

Volts

Amps

°C

APT2X61_60D60J

600

60

90

600

-55 to 175

DUAL DIE ISOTOP® PACKAGE

Microsemi Website - http://www.microsemi.com

SOT-227

ISOTOP

®

1

23

4

file # E145592

"UL Recognized"

APT2X61_60D60J

DYNAMIC CHARACTERISTICS

053-6005 Rev G 6-2006

New Diode Data Sheet By Darel Bidwell

ZθJC, THERMAL IMPEDANCE (°C/W)

10-5 10-4 10-3 10-2 10-1 1.0

RECTANGULAR PULSE DURATION (seconds)

FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

0.70

0.60

0.50

0.40

0.30

0.20

0.10

0

0.5

SINGLE PULSE

0.1

0.3

0.7

D =0.9

0.05

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

Peak TJ = PDM x ZθJC + TC

Duty Factor D = t1/t2

t2

t1

PDM

Note:

MIN TYP MAX

- 40

- 130

- 220

- 4 -

- 170

- 920

- 10 -

- 80

- 1900

- 38

UNIT

ns

nC

Amps

ns

nC

Amps

ns

nC

Amps

Characteristic

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Symbol

trr

Qrr

IRRM

trr

Qrr

IRRM

trr

Qrr

IRRM

Test Conditions

IF = 60A, diF/dt = -200A/µs

VR = 400V, TC = 25°C

IF = 60A, diF/dt = -200A/µs

VR = 400V, TC = 125°C

IF = 60A, diF/dt = -1000A/µs

VR = 400V, TC = 125°C

IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C

0.159 0.255 0.186

0.0056 0.0849 0.489

Dissipated Power

(Watts)

TJ (°C) TC (°C)

ZEXT are the external thermal

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.

ZEXT

THERMAL AND MECHANICAL CHARACTERISTICS

Characteristic / Test Conditions

Junction-to-Case Thermal Resistance

RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)

Package Weight

Maximum Mounting Torque

Symbol

RθJC

VIsolation

WT

Torque

MIN TYP MAX

.60

2500

1.03

29.2

10

1.1

UNIT

°C/W

Volts

oz

g

lb•in

N•m

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

053-6005 Rev G 6-2006

APT2X61_60D60J

TYPICAL PERFORMANCE CURVES

TJ = 125°C

VR = 400V

30A

60A

120A

200

180

160

140

120

100

80

60

40

20

0

40

35

30

25

20

15

10

5

0

Duty cycle = 0.5

TJ = 175°C

120

100

80

60

40

20

0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

700

600

500

400

300

200

100

0

CJ, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS

(pF) (Normalized to 1000A/µs)

IF(AV) (A)

TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)

Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature

VR, REVERSE VOLTAGE (V)

Figure 8. Junction Capacitance vs. Reverse Voltage

200

180

160

140

120

100

80

60

40

20

0

2500

2000

1500

1000

500

0

VF, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/µs)

Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change

-diF/dt, CURRENT RATE OF CHANGE (A/µs) -diF/dt, CURRENT RATE OF CHANGE (A/µs)

Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change

Qrr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT

(nC) (A)

IRRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME

(A) (ns)

TJ = 150°C

TJ = -55°C

TJ = 25°C

TJ = 125°C

0 0.5 1 1.5 2 2.5 0 200 400 600 800 1000 1200

0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200

TJ = 125°C

VR = 400V

120A

30A

60A

TJ = 125°C

VR = 400V 120A

60A

30A

trr

Qrr

trr

IRRM

0 25 50 75 100 125 150 25 50 75 100 125 150 175

1 10 100 200

APT2X61_60D60J

053-6005 Rev G 6-2006

APT60M75L2LL

4

3

1

2

5

Zero

1

2

3

4

diF/dt - Rate of Diode Current Change Through Zero Crossing.

IF - Forward Conduction Current

IRRM - Maximum Reverse Recovery Current.

trr - Reverse Recovery Time, measured from zero crossing where diode

Qrr - Area Under the Curve Defined by IRRM and trr.

current goes from positive to negative, to the point at which the straight

line through IRRM and 0.25 IRRM passes through zero.

Figure 9. Diode Test Circuit

Figure 10, Diode Reverse Recovery Waveform and Definitions

0.25 IRRM

PEARSON 2878

CURRENT

TRANSFORMER

diF/dt Adjust

30µH

D.U.T.

+18V

0V

Vr

trr/Qrr

Waveform

Anode 1

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4 H100

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

Anode 2

Anti-parallel Parallel

Cathode 1

r = 4.0 (.157)

(2 places) 4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

Cathode 2

Anode 1

Cathode 2 Anode 2

Cathode 1

SOT-227 (ISOTOP®) Package Outline

APT2X60D60J APT2X61D60J

ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234