Ultra-Large Area InGaAs p-i-n Photodiode Sheet 1 of 1 35PD10M The 35PD10M is the largest standard InGaAs detector available on the market today. Both circular (10mm diameter) and square (10mm edge length) formats are offered. Applications include high sensitivity instrumentation and test equipment. Standard packaging includes a hermetic TO-3 and a ceramic flat pack. Reliability is achieved through planar semiconductor design, and dielectric-passivation. Chips can also be attached and wire bonded to customer-supplied or other specified packages. Features: * Planar Structure * Dielectric Passivation * 100% Purge Burn-in * High Responsivity DEVICE CHARACTERISTICS Parameters Test Conditions Dark Current Capacitance Responsivity Responsivity Rise/Fall Dynamic Impedance Spectral Range -1V -1V 1300nm 1500nm Est. 50ohm load 0V Minimum Typical Maximum 20 3 0.9 1 1 > 60 850 - 1650 Units A nF A/W A/W s K Ohms nm ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 1 Volt 200mA 30mA -40C to +85C -40C to +85C 250C Sheet 1 of 1 829 Flynn Road, Camarillo, CA 93012 * Phone: (805) 445-4500 * Fax: (805) 445-4502 Email: customerservice@telcomdevices.com * Website: www.telcomdevices.com