C3M0120090J Silicon Carbide Power MOSFET TM C3M MOSFET Technology VDS 900 V ID @ 25C 22 A RDS(on) 120 m N-Channel Enhancement Mode Features * * * * * * * Package New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source TAB Drain Benefits * * * * Drain (TAB) 1 2 3 4 5 G KS S S S Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency 6 S 7 S Gate (Pin 1) Applications * * * * * Driver Source (Pin 2) Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Lighting Power Source (Pin 3,4,5,6,7) Part Number Package C3M0120090J TO-263-7 Maximum Ratings (TC = 25 C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 A VGSmax Gate - Source Voltage -8/+18 V Absolute maximum values VGSop Gate - Source Voltage -4/+15 V Recommended operational values Note (1) VGS = 15 V, TC = 25C Fig. 19 ID Continuous Drain Current ID(pulse) PD TJ , Tstg TL 22 14 A VGS = 15 V, TC = 100C Pulsed Drain Current 50 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 83 W TC=25C, TJ = 150 C Fig. 20 -55 to +150 C 260 C Operating Junction and Storage Temperature Solder Temperature Note (1): MOSFET can also safely operate at 0/+15 V 1 Value C3M0120090J Rev. A 01-2018 1.6mm (0.063") from case for 10s Electrical Characteristics (TC = 25C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 900 1.8 2.1 3.5 1.6 Unit Test Conditions V VGS = 0 V, ID = 100 A V VDS = VGS, ID = 3 mA V VDS = VGS, ID = 3 mA, TJ = 150C IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 120 155 RDS(on) Drain-Source On-State Resistance 170 7.7 gfs Transconductance Ciss Input Capacitance 350 Coss Output Capacitance 40 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 9 EON Turn-On Switching Energy 49 EOFF Turn Off Switching Energy 16 td(on) Turn-On Delay Time tr td(off) tf RG(int) VGS = 15 V, ID = 15 A m VGS = 15 V, ID = 15 A, TJ = 150C VDS= 15 V, IDS= 15 A S 6.7 Note VDS= 15 V, IDS= 15 A, TJ = 150C f = 1 MHz VAC = 25 mV J Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 600 V pF Fig. 11 Fig. 16 J VDS = 400 V, VGS = -4 V/15 V, ID = 15 A, RG(ext) = 2.5, L= 142 H, TJ = 150C Fig. 26, 29 ns VDD = 400 V, VGS = -4 V/15 V ID = 15 A, RG(ext) = 2.5 , Timing relative to VDS Inductive load Fig. 27, 29 f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 15 A Per IEC60747-8-4 pg 21 12.5 Rise Time 9 Turn-Off Delay Time 15 Fall Time 5 Internal Gate Resistance 16 Qgs Gate to Source Charge 4.8 Qgd Gate to Drain Charge 5.0 Qg Total Gate Charge 17.3 Fig. 12 Reverse Diode Characteristics (TC = 25C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Test Conditions Unit 4.8 V VGS = -4 V, ISD = 7.5 A 4.4 V VGS = -4 V, ISD = 7.5 A, TJ = 150 C Note Fig. 8, 9, 10 Continuous Diode Forward Current 17 A VGS = -4 V Note (2) Diode pulse Current 50 A VGS = -4 V, pulse width tP limited by Tjmax Note (2) VGS = -4 V, ISD = 15 A, VR = 400 V dif/dt = 900 A/s, TJ = 150 C Note (2) trr Reverse Recover time 24 ns Qrr Reverse Recovery Charge 115 nC Irrm Peak Reverse Recovery Current 6.2 A Note (2): When using SiC Body Diode the maximum recommended VGS = -4V Thermal Characteristics Symbol 2 Parameter Max. RJC Thermal Resistance from Junction to Case 1.5 RJA Thermal Resistance From Junction to Ambient 40 C3M0120090J Rev. A 01-2018 Unit C/W Test Conditions Note Fig. 21 Typical Performance 45 40 VGS = 15 V 35 VGS = 13 V 30 VGS = 11 V 25 20 VGS = 9 V 15 10 VGS = 7 V 5 0 VGS = 15 V Conditions: TJ = 25 C tp = < 200 s 40 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 45 Conditions: TJ = -55 C tp = < 200 s VGS = 13 V 35 VGS = 11 V 30 25 20 VGS = 9 V 15 10 VGS = 7 V 5 0 2 4 6 8 10 0 11 0 2 4 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 C 45 2.5 10 11 Conditions: IDS = 15 A VGS = 15 V tp < 200 s VGS = 13 V 2.0 35 VGS = 11 V 30 25 On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 40 8 Figure 2. Output Characteristics TJ = 25 C VGS = 15 V Conditions: TJ = 150 C tp = < 200 s 6 Drain-Source Voltage, VDS (V) VGS = 9 V 20 15 VGS = 7 V 10 1.5 1.0 0.5 5 0 0 2 4 6 8 10 0.0 11 -50 -25 0 Drain-Source Voltage, VDS (V) Figure 3. Output Characteristics TJ = 150 C 250 300 250 TJ = 150 C 175 150 TJ = -55 C 125 TJ = 25 C 100 75 50 25 0 100 125 150 225 200 VGS = 11 V 175 150 VGS = 13 V 125 100 VGS = 15 V 75 50 25 0 5 10 15 20 25 30 Drain-Source Current, IDS (A) 35 Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 75 Conditions: IDS = 15 A tp < 200 s 275 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 200 50 Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 s 225 25 Junction Temperature, TJ (C) C3M0120090J Rev. A 01-2018 40 45 0 -50 -25 0 25 50 75 Junction Temperature, TJ (C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 35 30 TJ = 25 C 20 -6 -5 -4 -3 -2 -1 0 0 -5 TJ = 150 C 25 -7 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -8 Conditions: VDS = 20 V tp < 200 s TJ = -55 C 15 10 VGS = -4 V -10 VGS = 0 V -15 -20 VGS = -2 V -25 -30 5 0 -35 0 2 4 6 8 10 12 Conditions: TJ = -55C tp < 200 s 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -7 -6 -5 -4 -3 -2 Figure 8. Body Diode Characteristic at -55 C -1 0 0 -8 -7 -6 -5 -4 -3 -2 -1 -10 VGS = 0 V -15 VGS = -2 V -20 -25 -30 VGS = -4 V Drain-Source Voltage VDS (V) -15 -20 VGS = -2 V -25 -30 -35 Conditions: TJ = 150C tp < 200 s -40 -45 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 C 3.0 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 1.5 1.0 0.5 -25 0 25 50 75 Junction Temperature TJ (C) 100 125 Figure 11. Threshold Voltage vs. Temperature 4 Conditions: IDS = 15 A IGS = 10 mA VDS = 400 V TJ = 25 C 12 -50 C3M0120090J Rev. A 01-2018 -45 16 2.0 0.0 -40 Figure 10. Body Diode Characteristic at 150 C Conditons VGS = VDS IDS = 3 mA 2.5 0 -10 VGS = 0 V -35 Conditions: TJ = 25C tp < 200 s 0 -5 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -5 VGS = -4 V -45 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -8 -40 150 8 4 0 -4 0 4 8 12 16 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 20 Typical Performance -5 -4 -3 -2 -1 0 0 Drain-Source Current, IDS (A) VGS = 0 V -10 VGS = 5 V VGS = 10 V -20 VGS = 15 V -6 -5 -4 -3 -2 -1 0 -10 VGS = 5 V VGS = 10 V -20 VGS = 15 V -30 Conditions: TJ = -55 C tp < 200 s -30 Conditions: TJ = 25 C tp < 200 s -40 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 C -6 -5 -4 -3 -2 -1 0 VGS = 0 V Drain-Source Current, IDS (A) -6 -40 Figure 14. 3rd Quadrant Characteristic at 25 C 0 20 0 Drain-Source Current, IDS (A) VGS = 0 V VGS = 5 V VGS = 10 V -20 VGS = 15 V Stored Energy, EOSS (J) 15 -10 10 5 -30 Conditions: TJ = 150 C tp < 200 s Drain-Source Voltage VDS (V) 0 -40 0 100 Figure 15. 3rd Quadrant Characteristic at 150 C 1000 500 600 700 800 900 1000 Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Ciss Capacitance (pF) Capacitance (pF) 10 400 Drain to Source Voltage, VDS (V) 1000 Coss 100 300 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Ciss 200 Crss 100 Coss 10 Crss 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C3M0120090J Rev. A 01-2018 200 1 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V) 800 900 Typical Performance 90 Conditions: TJ 150 C Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 25 20 15 10 5 0 -55 -30 -5 20 45 70 Case Temperature, TC (C) 95 120 Conditions: TJ 150 C 80 70 60 50 40 30 20 10 0 145 -55 1 100E-3 0.05 0.02 0.01 10E-3 SinglePulse 95 120 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 100 ms 0.10 1 Switching Loss (uJ) ETotal 120 EOn 80 5 10 15 Drain to Source Current, IDS (A) 1 10 Drain-Source Voltage, VDS (V) 100 1000 Conditions: TJ = 25 C VDD = 400 V RG(ext) = 2.5 VGS = -4V/+15 V FWD = C3M0120090J L = 142 H 80 ETotal 60 EOn 40 20 20 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) C3M0120090J Rev. A 01-2018 0.1 EOff EOff 0 Conditions: TC = 25 C D = 0, Parameter: tp Figure 22. Safe Operating Area 100 40 100 s 1.00 120 Conditions: TJ = 25 C VDD = 600 V RG(ext) = 2.5 VGS = -4V/+15 V FWD = C3M0120090J L = 142 H 160 145 1 ms 0.01 1E-6 200 Switching Loss (uJ) 70 Limited by RDS On 10.00 Figure 21. Transient Thermal Impedance (Junction - Case) 6 45 10 s 0.1 0 20 Case Temperature, TC (C) 0.5 0.3 1E-3 -5 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Figure 19. Continuous Drain Current Derating vs. Case Temperature -30 25 0 0 5 10 15 Drain to Source Current, IDS (A) 20 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 25 Typical Performance 120 Switching Loss (uJ) 100 Conditions: TJ = 25 C VDD = 400 V IDS = 15 A VGS = -4V/+15 V FWD = C3M0120090J L = 142 H 80 90 EOn 60 EOff 30 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Conditions: TJ = 25 C VDD = 400 V IDS = 15 A VGS = -4V/+15 V FWD = C3M0120090J L = 142 H Times (ns) 25 20 20 25 0 EOff 0 25 50 75 100 125 Junction Temperature, TJ (C) tr tf 5 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) C3M0120090J Rev. A 01-2018 20 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature td(on) 10 7 EOn 40 td(off) 15 0 ETotal 60 20 Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 30 Conditions: IDS = 15 A VDD = 400 V RG(ext) = 2.5 VGS = -4V/+15 V FWD = C3M0120090J L = 142 H ETotal Switching Loss (uJ) 150 25 Figure 28. Switching Times Definition 175 Test Circuit Schematic Q1 RG VGS= - 4V VDC Q2 RG D.U.T Figure 29. Clamped Inductive Switching Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0120090J Rev. A 01-2018 Package Dimensions Package 7L D2PAK TO-263-7 Dim All Dimensions in Millimeters Min C3M0120090J Rev. A 01-2018 Max 4.570 A 4.300 4.435 A1 0.00 0.125 0.25 b 0.500 0.600 0.700 b2 0.600 0.800 1.000 c 0.330 0.490 0.650 C2 1.170 1.285 1.400 9.125 D 9.025 9.075 D1 4.700 4.800 4.900 E 10.130 10.180 10.230 E1 6.500 7.550 8.600 E2 6.778 7.223 7.665 e 9 typ 1.27 H 15.043 16.178 17.313 L 2.324 2.512 2.700 L1 0.968 1.418 1.868 O 0 4 8 O1 4.5 5 5.5 Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links * * * C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright (c) 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0120090J Rev. A 01-2018 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power