2SC4002E - ON Semiconductor L.L.C.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Triple Diffused Planar Silicon Transistor

High-Voltage Driver Applications

Ordering number:ENN2960

2SC4002

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82903TN (KT)/D1598HA (KT)/6139MO, TS No.2960–1/3

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2003B

[2SC4002]

Features

· High breakdown voltage.

· Adoption of MBIT process.

· Excellent hFE linearity.

˚C

Electrical Characteristics at Ta = 25˚C

1 : Emitter

2 : Collector

3 : Base

SANYO : NP

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC 004V

egatloVrettimE-ot-rotcelloCV

OEC 004V

egatloVesaB-ot-rettimEV

OBE 5V

tnerruCrotcelloCI

C002Am

)esluP(tnerruCrotcelloCI

PC 004Am

noitapissiDrotcelloCP

C006Wm

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

tnerruCffotuCrotcelloCI

OBC VBC I,V003= E0=1.0Aµ

tnerruCffotuCrettimEI

OBE VBE I,V4= C0=1.0Aµ

niaGtnerruCCD hEF VEC I,V01= CAm05= *06*002

tcudorPhtdiwdnaB-niaGf

TVEC I,V03= CAm01= 07zHM

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC ICI,Am05= BAm5= 6.0V

egatloVnoitarutaSrettimE-ot-esaBV

)tas(EB ICI,Am05= BAm5= 0.1V

* : The 2SC4002 is classified by 50mA hFE as follows : Continued on next page.

knaRDE

hEF 021ot06002ot001

5.0

4.0

0.5

0.6

2.0

14.0 5.0

0.45

4.0

0.44

1.3

123

2SC4002

No.2960–2/3

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

egatloVnwodkaerBesaB-ot-rotcelloCV

OBC)RB( ICI,Aµ01= E0=004V

egatloVnwodkaerBrettimE-ot-rotcelloCV

OEC)RB( ICR,Am1= EB =∞004V

egatloVnwodkaerBesaB-ot-rettimEV

OBE)RB( IEI,Aµ01= C0=5V

ecnaticapaCtuptuOC

bo VBC zHM1=f,V03= 4Fp

ecnaticapaCrefsnarTesreveRC

er VBC zHM1=f,V03= 3Fp

emiTNO-nruTt

no .tiucrictsetdeificepseeS 52.0sµ

emiTFFO-nruTt

ffo .tiucrictsetdeificepseeS 0.5sµ

Switching Time Test Circuit

Continued from preceding page.

VBE= --1V

10IB1= --10IB2=IC=50mA

RL=3kΩ, RB=200Ω at IC=50mA

VCC=150V

VRRB

50Ω

INPUT OUTPUT

100µF 470µF

PW=20µsIB1

D.C.≤1% IB2

100

277735 235

101.0 100 23

hFE -- IC

ITR06236

VCE=10V

Ta=70°C

25°C

--30°C

120

100

00 0.2 0.4 0.6 0.8 1.0 1.2 1.4

IC -- VBE

ITR06235

Ta=70°C

25°C

--30°C

VCE=10V

VBE(sat) -- IC

ITR06238

VCE(sat) -- IC

0.1

1.0

223 5 2 777352

1.0 10 100

ITR06237

IC / IB=10

1.0

2277735 235 23

1.0 10 100

IC / IB=10

Ta=70°C

25°C,

--30°C

Ta= --30°C

25°C

70°C

Collector Current, IC–mA

Base-to-Emitter Voltage, VBE –V

DC Current Gain, hFE

Collector Current, IC–mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) –V

Collector Current, IC–mA

Base-to-Emitter

Saturation Voltage, VBE(sat) –V

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 2003. Specifications and information herein are subject to

change without notice.

2SC4002

PS No.2960–3/3

700

600

500

400

300

200

100

2006040 80 100 140120 160

PC -- Ta

ITR06241

1.0

1000

100

10010

57 223353572

10ms

ICP=400mA

IC=200mA

ITR06240

A S O

1ms

100ms

DC operation(Ta=25°C)

SW Time -- ID

0.1

1.0

23 5 23 5 23 577

1.0 10 100 ITR06239

ton

Ta=25°C

VCC=150V

10IB1= --10IB2=IC

tstg

Collector Current, IC–mA

Switching Time, SW Time –µs

Collector Current, IC–mA

Collector-to-Emitter Voltage, VCE –V

Collector Dissipation, PC–mW

Ambient Temperature, Ta –˚C