DSR01S30SC
2009-12-03
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR01S30SC
High-Speed Switching Application
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Reverse voltage VR 30 V
Average forward current IO 100 * mA
Surge current (10ms) IFSM 2 A
Junction temperature Tj 125 °C
Storage temperature range Tstg 55 to 125 °C
*: Mounted on a glass-epoxy circuit board of 20 mm× 20 mm,
pad dimensions of 4 mm× 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
Forward voltage VF (1) I
F = 10 mA 0.37 0.5 V
Forward voltage VF (2) I
F = 100 mA 0.51 0.62 V
Reverse current IR (1) V
R = 10 V 0.35 μA
Reverse current IR (2) V
R = 30 V 0.7
μA
Total capacitance CT V
R = 0, f = 1 MHz 8.2 pF
Marking Equivalent Circuit (Top View)
JEDEC
JEITA
TOSHIBA 1-1R1A
Weight: 0.17 mg (typ.)
Unit: mm
SC2
0.19±0.02 0.1 0.02
0.27±0.02
0.025±0.015
0.3 8
0.62 ±0.030.3±0.03
0 .32±0.03
0.025±0.015
1: CA THODE
2: ANO DE
DSR01S30SC
2009-12-03
2
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
DSR01S30SC
2009-12-03
3
I
F
- V
F
0.001
0.01
0.1
1
10
100
0 0.10.20.30.40.50.60.7
C
T
- V
R
1
10
0 5 10 15 20 25 30
Ta=100℃
75℃
50℃
25℃
0℃
-25℃
I
R
- V
R
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30
Ta=100℃
75℃
50℃
25℃
FORWARD CURRENT 
I
F
(mA)
REVERSE CURRENT 
I
(uA)
FORWARD VOLTAGE
V
F
(V) REVERSE VOLTAGE
V
R
(V)
REVERSE VOLTAGE
V
R
(V)
TOTAL CAPACITANCE C
(pF)
f=1MHz
Ta=25℃
(μA
DSR01S30SC
2009-12-03
4
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