BUZ 102SL
Data Book 1 05.99
Product Summary
Drain source voltage 55
V
DS
V
Drain-Source on-state resistance Ω
0.015
R
DS(on)
I
D
Continuous drain current 47 A
Features
•N channel
•Enhancement mode
•Avalanche rated
•Logic Level
•d
v
/d
t
rated
•175 ˚C operating temperature
Pin 1 Pin 2 Pin 3
G D S
PackagingType Package Ordering Code
BUZ102SL TubeP-TO220-3-1 Q67040-S4010-A2
BUZ102SL E3045A Tape and ReelQ67040-S4010-A6P-TO263-3-2
TubeBUZ102SL E3045 P-TO263-3-2 Q67040-S4010-A5
Maximum Ratings, at
T
j= 25 ˚C unless otherwise specified
Parameter Symbol UnitValue
Continuous drain current
T
C
= 25 ˚C
T
C
= 100 ˚C
47
33
I
D
A
Pulsed drain current
T
C
= 25 ˚C
I
Dpulse
188
Avalanche energy, single pulse
I
D
=47A,
V
DD
=25V,
R
GS
=25Ω
mJ
E
AS
245
Avalanche energy, periodic limited by
T
jmax
12
E
AR
Reverse diode d
v
/d
t
I
S
=47A,
V
DS
=40V, d
i
/d
t
= 200 A/
µ
s,
T
jmax
= 175 ˚C
d
v
/d
t
6kV/
µ
s
Gate source voltage
V
GS
–20 V
Power dissipation
T
C
= 25 ˚C
P
tot
120 W
Operating and storage temperature
T
j,
T
stg
˚C-55... +175
55/175/56IEC climatic category; DIN IEC 68-1
BUZ 102SL
Data Book 2 05.99
Thermal Characteristics
Parameter ValuesSymbol Unit
typ. max.min.
Characteristics
R
thJC
- - 1.25 K/WThermal resistance, junction - case
-Thermal resistance, junction - ambient, leded
R
thJA
-62
-
-
-
-
62
40
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
Electrical Characteristics, at
T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol UnitValues
min. max.typ.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
-
V
(BR)DSS
55 - V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 90 µA
V
GS(th)
21.61.2
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 ˚C
-
-
I
DSS
µA
1
100
0.1
-
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-10 nA100
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 33 A
V
GS
= 10 V,
I
D
= 33 A
R
DS(on)
-
-
0.021
0.0135
0.024
0.015
Ω
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
BUZ 102SL
Data Book 3 05.99
Electrical Characteristics, at
T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
≥2*
I
D
*
R
DS(on)max
,
I
D
= 33 A
g
fs
10 40 - S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
-1380 1730 pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-410 515
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
rss
-230 290
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 47 A,
R
G
= 3.6 Ω
t
d(on)
-15 25 ns
Rise time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 47 A,
R
G
= 3.6 Ω
t
r
-30 45
Turn-off delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 47 A,
R
G
= 3.6 Ω
t
d(off)
-30 45
Fall time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 47 A,
R
G
= 3.6 Ω
t
f
-20 30
BUZ 102SL
Data Book 4 05.99
Electrical Characteristics, at
T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
V
DD
= 40 V,
I
D
= 47 A
10.5 nC7
Q
gs
-
-23
Q
gd
Gate to drain charge
V
DD
= 40 V,
I
D
= 47 A
34.5
Gate charge total
V
DD
= 40 V,
I
D
= 47 A,
V
GS
= 0 to 10 V
-60 90
Q
g
Gate plateau voltage
V
DD
= 40 V,
I
D
= 47 A
V
(plateau)
4.1 - V-
Reverse Diode
Inverse diode continuous forward current
T
C = 25 ˚C
I
S- - 47 A
Inverse diode direct current,pulsed
T
C = 25 ˚C
I
SM - - 188
Inverse diode forward voltage
V
GS = 0 V,
I
F = 94 A
V
SD -1.1 V1.7
Reverse recovery time
V
R = 30 V,
I
F=
I
S , d
i
F/d
t
= 100 A/µs
t
rr -75 ns115
Reverse recovery charge
V
R = 30 V,
I
F=
l
S , d
i
F/d
t
= 100 A/µs
Q
rr -µC0.15 0.25
BUZ 102SL
Data Book 5 05.99
Power Dissipation
P
tot
=
f
(
T
C
)
020 40 60 80 100 120 140 160 ˚C190
T
C
0
10
20
30
40
50
60
70
80
90
100
110
W
130
BUZ102SL
P
tot
Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥ 10 V
020 40 60 80 100 120 140 160 ˚C190
T
C
0
5
10
15
20
25
30
35
40
45
A
55
BUZ102SL
I
D
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
BUZ102SL
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 ˚C
10 -1 10 0 10 1 10 2
V
V
DS
0
10
1
10
2
10
3
10
A
BUZ102SL
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 21.0µs
BUZ 102SL
Data Book 6 05.99
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
DS
0
10
20
30
40
50
60
70
80
90
100
A
120
BUZ102SL
I
D
V
GS [V]
a
a2.5
b
b3.0
c
c3.5
d
d4.0
e
e4.5
f
f5.0
g
g5.5
h
h6.0
i
i6.5
j
j7.0
k
k8.0
l
P
tot = 120W
l 10.0
Typ. drain-source-on-resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
010 20 30 40 50 60 70 80 A100
I
D
0.000
0.010
0.020
0.030
0.040
0.050
0.060
Ω
0.080
BUZ102SL
R
DS(on)
V
GS [V] =
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
6.5
j
j
7.0
k
k
8.0
l
l
10.0
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80 µs
V
DS
≥ 2 x
I
D
x
R
DS(on)max
1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
GS
0
20
40
A
80
I
D
Typ. forward transconductance
g
fs
= f
(
I
D
)
;
T
j
= 25˚C
parameter:
g
fs
010 20 30 40 50 A65
I
D
0
5
10
15
20
25
30
35
S
45
g
fs
BUZ 102SL
Data Book 7 05.99
Drain-source on-resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 33 A,
V
GS
= 4.5 V
-60 -20 20 60 100 140 ˚C200
T
j
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
Ω
0.085
BUZ102SL
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter :
V
GS
=
V
DS
,
I
D
= 90 µA
-60 -20 20 60 100 140 ˚C200
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
min
typ
max
Typ. capacitances
C = f (V
DS
)
parameter:
V
GS
= 0 V,
f
= 1 MHz
010 20 V40
V
DS
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j
,
t
p
= 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
0
10
1
10
2
10
3
10
A
BUZ102SL
I
F
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 175 ˚C typ
T
j = 175 ˚C (98%)
BUZ 102SL
Data Book 8 05.99
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
= 47 A
010 20 30 40 50 60 70 80 nC 100
Q
Gate
0
2
4
6
8
10
12
V
16
BUZ102SL
V
GS
DS max
V
0,8
DS max
V
0,2
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 47 A,
V
DD
= 25 V
R
GS
= 25 Ω
20 40 60 80 100 120 140 ˚C180
T
j
0
20
40
60
80
100
120
140
160
180
200
220
mJ
260
E
AS
Drain-source breakdown voltage
V
(BR)DSS
=
f (T
j
)
-60 -20 20 60 100 140 ˚C200
T
j
50
52
54
56
58
60
62
64
V
66
BUZ102SL
V
(BR)DSS
