il Lee : - - TELEFUNKEN ELECTRONIC V7E D mm 8920054 0009665 9 WB ALGG Vv TFK 5070D_ | TELEFUNKEN electronic | Creatree Technologies | Preliminary specifications | NPN Silicon Darlington Power Transistor T- 33 -3 s | \ Applications: Motor-control (380 V-mains) 4 @ UPS (Uninterruptible power supplies) i @ High power SMPS (&1000 W) \ @ Battery chargers i @ Welding equipments : @ Inductive heating equipment i Features: 1 - @ High reverse voltage @ Base 1 and base 2 connectable ; @ Short switching times @ Triple diffusion technique i @ Very fast C-E-free-wheel diode @ Glass passivation : Case variations . TRKS5O70D TFK 5070 DA Terminal connections o75602 c "= - on 5826 ease27 71.2/1453.0888 E 2802 D-11 281TELEFUNKEN ELECTRONIC L7E D M@ 89200564 OO0%bbb O MMALGG TFK 5070 D T-33-35 j Dimensions in mm Sy (Q : \ 205se1 ofa Be L i Lh I ! | bred | ! : - rye au | nen ay 3 4 2 t } TFK 5070D j 3 ~ i i go. eanrieg SO TFK 5070DA a Plastic case Screg nut Ma DEA Sac amse Weight max. 30.0 g 282 2803 D-12 4 _ TELEFUNKEN ELECTRONIC L?E D MM 84920096 OOUdbE? 2 MMALGG TFK 5070D bt 3 1-33-35 7 Absolute maximum ratings i Collector-emitter voltage Veco 700 Vv i 1 Vers 1000 Vv i Emitter-base voltage Veso 7 v Collector current I, 30 A * Collector peak current tons 50 A Base current Is 4 A : Base peak current bona 8 A t Total power dissipation . Tease 23 C Prot 150 Ww ~ Junction temperature Tj 160 ba 01 3 Storage temperature range stg 40...4+150 Insulation voltage Vie 2500 Vv Maximum thermal resistances Junction case Power transistor Ruse 0.83 K/W : Free-wheel diode Rinse 1.8 KW : Characteristics Min. Typ. Max. " Toase 25 C, unless otherwise specified Collector cut-off current Veen = 1000 V, F, = 270 0, A, = 100 2 loge 0.4 mA Veen 21000 V, Ry= 270, R,= 100 loge 0.6 mA Tyagg = 100 C , Vogn = 1000 V, Ry =270 0, R, =100 Q loen 3.0 mA Vora 1000 V, R,= 279,R,= 100 loen 5.0 mA Emitter cut-off current Veg = 5V 7G leBo 1.0 mA Collector-emitter breakdown voltage [5750 mA, L= 125 mH Viariceo 700 Vv [=z ima, R= 270 9, R, =100 Q Viaricen 1000 Vv * Emitter-base breakdown voltage : = SmA Tye Te Vierjea0 7 Vv Collector saturation voltage gm 25 As by 1-6 Ar Tease = 100 C Voreat 25 V [= 18 A, fy = 0.8 A, Togyy = 125 C Voesat 22 V DC forward current transfer ratio Veg 2 Vi lg = 25 A. Neg 17 2804 p-13 283ro en Doe oe i : BO TELEFUNKEN ELECTRONIC L7E D MM 8920056 0005668 4 MBALGG TFK 5070D | T-33-35 Min, Typ. Max. i Collector-emitter working voltage = Veo 30 Alp, = 1.4.4, L=12 pH Vag = 7 V, Rg = 0.6 Q, V5 = 50 V Veew 700 vo 4 * Forward voltage of the diode } p25 A V, 19 V : Switching characteristics . { i Inductive toad, 7,,,,= 100C : [p25 Alyy 1.5. A, L=0,6 MH, Viigg, * 700 V i - Vag = 7 V, Ryg = 0.6 2, Vz = 300 V 4 Storage time t, 7.0 us ' Fall time t, 0.6 ys am wah ae wena wen at 04 08 12 416V Vp altg i a a TELEFUNKEN ELECTRONIC V7E D MM 8920056 CO0%HE9 & 66 MAL TFK 50/ULD 66 1 antisaturation circuitry. Fig.4 100 125C 750 0.01 0.1 2806 -01 1-33-35 _ 075633 Fig. 4 Antisaturation voltage 285| - w+ ee TELEFUNKEN ELECTRONIC TFK 5070D 7-33-35 | . eset Yee VoEsatdyn 2V 100% 90% 01 A Fig. 7 Vorsat dyn Gofinition 3a dyn 10 0.01 0.1 A 286 5307 -02 bantya Mew iapmenackiote tn HH Heras hile wath AL atenee tegen vane aah di oe 17E D MM 85920096 0009670 2 MMALGG47E D Mm 8920056 0009671 4 MBALGG TELEFUNKEN ELECTRONIC 2808 -03 -TFK 5070D T-33-35 287 tases a pebubintp 164 At enepeel tnt Me rita beme we TELEFUNKEN ELECTRONIC L7E D MM 89200%b 0005b72 b MMALGG TFK 5070D 1-33-35 e7rtes3a @ - with antisaturation circuitry, Fig.4 Vogm2.b Ip m25A Igya GA ' Tease = 25C ! Tagg = 100C 1 t , 8 ~ \ { i 4 q ~ i i { { t i A ' i = i 1 ad 3 i with antisaturation circuitry inductive load. Fig.4 j aio, Blas fat et 5 10 50A co 288 2809 = E=04TELEFUNKEN ELECTRONIC = =617E D Ml 8920056 0005380 4 MmMALGG @ Family ofcurves _ . ] 1 -20 Besides the static (d. .) and dynamic {a. c.) charac- paste ao AEG CORP teristics, family of curves are given for specified = operating conditions. They show the typical inter- depedence of individual characteristics. Partly are given the scattering limits. They signify that at least 95% of the delivery lies inside these tolerances. . 6.6. Additional informations Preliminary specifications This heading indicates that some information on the device concerned maybe subject to slight chan- ges. Not for new developments This heading indicates that the device concerned should not be used in equipment under develop- ment, it is, however, available for prasent produc- tion. "7. Taping and reeling 7.1. Taping of TO-92 transistors Standard reeling: Taped on reel, reeled together with a paper film. 7.1.1, Order Numbers Add the taping-code to the order number. Example: 1 BC238C DU 06} t Zz Order-No. of Type Code for TO-92 Transistors | Orientation of transistor on tape "? Additional marking for specials 2) 1 06 = View on flat side of transistor, view on gummed tape O5 = View on round side of transistor, view on gummed tape 9) Additional marking O" : Taping without paper film Additional marking 2: Zigzag folded tape inspecial box. Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example for order No.: BC 237C DUZ 2517 E~06 144 Fig. 7.1, Dimensions of reel in mm ensasee Fig. 7.2. Dimension of box for Zigzag folding inmm weap wane Fig. 7.3. Dimensions of tape in mm 7.1.2 Quantity of devices 1000 devices per reel 2.000 devices per folded tape in special box. 7.2 Taped transistors in SOT 23 and SOT 143 case a) Standard taping Designation is attached with code GS 08 in case of standard taping. Example for normal version transistors as standard taped: BF 569- Gsos. Example for R-version transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orienta- tion on the tape is shown in Fig. 7.4 and Fig. 7.5. rece fe ee 8 ereemrernntate aint me weeds fb petamense tie dimer SmaI hs ene aay ee pepe AQ ee htI = L7E D Mm 492005. De-resiing direction oacnsee Fig. 7.4 Standard taped SOT 23 ensesee 0009381 & BMALGG | Fig. 7.6 Reverse taped SOT 23 -De-reating direction . 18 1 ' sue Se ee Sy Cn raccn accanynd | ra 1g pot Liwod ot J YH aap eh aL Brus 17 writen aimee eet tm wade | e + LTGser i wtb = eats a we] asus { _ ea sO 3095 }) 208 estas Lassa] BSSEE soa || Fig. 7.6 Standard taped SOT 143 Fig. 7.7 Dimensions of tape in mm : b} Reverse taping : Desigantionis attached with codeGS07 incase veuene of reverse taping. Example for normal version ast ase 5 transistors as reverse taped: BF 569 R-GS 07. . ae 3 Example for R-version transistors as reverse ta- y | soeant : ing: BF 569 R-GS 07. asae : ping Vg Sy, i In case of reverse taping, the transistor orientation HL $F ataus : on the tape is shown in Fig. 6. Cees, a Regarding MOF-FET and MES-FET devices, reverse + te ~ 3 taping is at present not available. j 300. iszgt . Fig. 7.8 Dimensions of reel in mm 7.2.2 Quantity of devices 8. Assessories 3000 devices per ree! Number Fig. Designation For case 119880 8.1. Isolating washer thickness 60 pm 12A3 DIN 41869 JEDEC TO 126 (SOT 32) 564542 8.2. Isolating washer thickness 50 pm 14A3 DIN 41 869 - JEDEC TO 220 (SOT 78) 912884 83 Isolating washer thickness 50 pm 15A3 DIN 41869 (TOP 3) for clip mounting 191131 8.4 Isolating washer thickness 50 pm 15A 3 DIN 41869 (TOP 3) for screw mounting 191140 8.5 Mounting clip 15A3 DIN 41869 (TOP3) 669624 8.6 lsolating washer thickness 100 pm +50um 38 2 DIN 41872 JEDEC TO 3 Devices with high reverse voltage E-07 A28 2518 v