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ISSUE 1 - MARCH 2001
ZVN4525G
SUMMARY
(
DESCRIPTION
This 250V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT23-6 versions are also available.
FEATURES
•High voltage
•Low on-resistance
•Fast switching speed
•Low gate drive
•Low threshold
•Complementary P-channel Type ZVP4525G
•SOT223 package
APPLICATIONS
•Earth Recall and dialling switches
•Electronic hook switches
•High Voltage Power MOSFET Drivers
•Telecom call routers
•Solid state relays
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH (mm) QUANTITY
PER REEL
ZVN4525GTA 7 8mm embossed 1000 units
ZVN4525GTC 13 8mm embossed 4000 units
DEVICE MARKING
•ZVN4525G
250V N-CHANNEL ENHANCEMENT MODE MOSFET
D
D
S
G
Top View
SOT223
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ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 250 V
Gate Source Voltage VGS ±40 V
Continuous Drain Current (VGS=10V; TA=25°C)(a)
(VGS=10V; TA=70°C)(a) ID
ID
310
248 mA
mA
Pulsed Drain Current (c) IDM 1.44 A
Continuous Source Current (Body Diode) IS1.1 A
Pulsed Source Current (Body Diode) ISM 1.44 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD2
16 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 63 °C/W
Junction to Ambient (b) RθJA 26 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
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CHARACTERISTICS
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNI
TCONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 250 285 V ID=1mA, VGS=0V
Zero Gate Voltage Drain Current IDSS 35 500 nA VDS=250V, VGS=0V
Gate-Body Leakage IGSS ±1 ±100 nA VGS=±40V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 0.8 1.4 1.8 V ID=1mA, VDS=V
GS
Static Drain-Source On-State Resistance (1) RDS(on) 5.6
5.9
6.4
8.5
9.0
9.5
Ω
Ω
Ω
VGS=10V, ID=500mA
VGS=4.5V, ID=360mA
VGS=2.4V, ID=20mA
Forward Transconductance (3) gfs 0.3 0.475 S VDS=10V,ID=0.3A
DYNAMIC (3)
Input Capacitance Ciss 72 pF VDS=25V,V
GS=0V,
f=1MHz
Output Capacitance Coss 11 pF
Reverse Transfer Capacitance Crss 3.6 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.25 ns VDD =30V, ID=360mA
RG=50Ω,V
GS =10V
(refer to test circuit)
Rise Time tr1.70 ns
Turn-Off Delay Time td(off) 11.40 ns
Fall Time tf3.50 ns
Total Gate Charge Qg2.6 3.65 nC VDS=25V,VGS=10V,
ID=360mA(refer to
test circuit)
Gate-Source Charge Qgs 0.2 0.28 nC
Gate Drain Charge Qgd 0.5 0.70 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.97 V Tj=25°C, IS=360mA,
VGS=0V
Reverse Recovery Time (3) trr 186 260 ns Tj=25°C, IF=360mA,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 34 48 nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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TYPICAL CHARACTERISTICS
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CHARACTERISTICS
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CHARACTERISTICS
BasicGateChargeWaveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
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PACKAGE DIMENSIONS PAD LAYOUT DETAILS
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3701-04 Metroplaza, Tower 1 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong © Zetex plc 2000
Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49 Fax: (631) 864-7630 Fax: (852) 24250 494 www.zetex.com
Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Dim Millimeters Inches
Min Max Min Max
A 6.3 6.7 0.248 0.264
B 3.3 3.7 0.130 0.146
C – 1.7 – 0.067
D 0.6 0.8 0.024 0.031
E 2.9 3.1 0.114 0.122
F 0.24 0.32 0.009 0.013
G NOM 4.6 NOM 0.181
H 0.85 1.05 0.033 0.041
K 0.02 0.10 0.0008 0.004
L 6.7 7.3 0.264 0.287
M NOM 2.3 NOM 0.0905
2.0 min
2.3 1.5 min
(3x)
(3x)
4.6
6.8
3.8 min
2.0 min
