NTE56004 thru NTE56010
TRIAC, 15 Amp
The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full–wave AC control a p-
plications, such as solid–state relays, motor controls, heating controls and power supplies; or wherev-
er full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from
a blocking to a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.
Features:
DBlocking Voltage from 200 to 800 Volts
DAll Diffused and Glass Passivated Junctions
DSmall, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability
DGate Triggering specified in Four Quadrants
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage, (TJ = –40° to 125°C), VDRM
NTE56004 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56006 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56008 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56010 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage, VGM 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
On–State Current RMS (Full Cycle Sine Wave 50 to 60Hz,TC = +90°C), IT(RMS) 15A. . . . . . . . . . .
Circuit Fusing (t = 8.3ms) I2t 93A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge Current (One Full Cycle, 60Hz, TC = +80°C), ITSM
Preceded and followed by rated current 150A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power (TC = +80°C, Pulse Width = 2µs), PGM 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power (TC = +80°C, t = 8.3ms), PG(AV) 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, IGM 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (TC = 25°C, and either polarity of MT2 to MT1 Voltage, unless
otherwise noted)
Characteristics Symbol Min Typ Max Unit
Peak Forward or Reverse Blocking Current
(Rated VDRM, or VRRM, Gate open) TJ=25°C
TJ=125°C
IDRM,
IRRM –
––
–10
2µA
mA
Peak On–State Voltage
(ITM = 21 A Peak; Pulse Width = 1 to 2ms,
Duty Cycle ≤ 2%)
VTM –1.3 1.6 Volts
Gate Trigger Current (Continuous dc)
(VD = 12Vdc, RL = 100 Ohms)
MT2(+) G(+), MT2(+) G(–), MT2(–) G(–)
MT2(–), G(+)
IGT
–
––
–50
75
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12Vdc, RL = 100 Ohms)
MT2(+) G(+), MT2(+) G(–)
MT2(–) G(–)
MT2(–) G(+)
(VD = Rated VDRM, RL = 10k Ohms, TJ = 110°C)
MT2(+) G(+), MT2(–) G(–), MT2(+) G(–)
MT2(–) G(+)
VGT
–
–
–
0.2
0.2
0.9
1.1
1.4
–
–
2
2
2.5
–
–
Volts
Holding Current (Either Direction)
(VD = 12Vdc, IT = 200mA, Gate Open) IH–6 40 mA
Turn–On Time
(VD = Rated VDRM, ITM = 17A)
(IGT = 120mA, Rise Time = 0. 1µs, Pulse Width = 2µs)
tgt –1.5 –µs
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 21 A, Commutating
di/dt = 8A/ms, Gate Unenergized, TC = 80°C)
dv/dt(c) –5–V/µs
.250
(6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
MT1
.100 (2.54) MT2
Gate
.147 (3.75)
Dia Max
MT2
