2SD669, 2SD669A
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
123
2SD669, 2SD669A
2
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD669 2SD669A Unit
Collector to base voltage VCBO 180 180 V
Collector to emitter voltage VCEO 120 160 V
Emitter to base voltage VEBO 55V
Collector current IC1.5 1.5 A
Collector peak current IC(peak) 33A
Collector power dissipation PC11W
P
C
*
120 20 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD669, 2SD669A
3
Electrical Characteristics (Ta = 25°C)
2SD669 2SD669A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage V(BR)CBO 180 — — 180 — — V IC = 1 mA, IE = 0
Collector to emitter
breakdown voltage V(BR)CEO 120 — — 160 — — V IC = 10 mA, RBE = ∞
Emitter to base
breakdown voltage V(BR)EBO 5 ——5 ——V I
E
= 1 mA, IC = 0
Collector cutoff current ICBO ——10——10µAV
CB = 160 V, IE = 0
DC current transfer
ratio hFE1*160 — 320 60 — 200 VCE = 5 V, IC = 150 mA*2
hFE2 30 — — 30 — — VCE = 5 V, IC = 500 mA*2
Collector to emitter
saturation voltage VCE(sat) ——1 ——1 V I
C
= 500 mA,
IB = 50 mA*2
Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 150 mA*2
Gain bandwidth product fT— 140 — — 140 — MHz VCE = 5 V, IC = 150 mA*2
Collector output
capacitance Cob —14——14—pFV
CB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SD669 and 2SD669A are grouped by hFE1 as follows.
2. Pulse test.
BCD
2SD669 60 to 120 100 to 200 160 to 320
2SD669A 60 to 120 100 to 200 —
2SD669, 2SD669A
4
Maximum Collector Dissipation
Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
3
1.0
0.3
Collector current IC (A)
0.01
0.03
0.1
33010 3001 100
Collector to emitter voltage VCE (V)
Area of Safe Operation
DC Operation(TC = 25°C)
(13.3 V, 1.5 A)
(40 V, 0.5 A)
(120 V, 0.04 A)
(160 V, 0.02A)
2SD669A
2SD669
3.5
5.5
4.0
4.5
5.0
Typical Output Characteristecs
TC = 25°C
PC = 20 W
IB = 0
0.5 mA
1.0
1.5
2.0
2.5
3.0
1.0
0.8
0.6
0.4
0.2
01020
Collector to emitter voltage VCE (V) 504030
Collector current IC (A)
Typical Transfer Characteristics
500
200
100
50
20
10
5
2
10 0.2 0.4 0.6 0.8 1.0
Collector current IC (A)
Base to emitter voltage VBE (V)
VCE = 5 V
Ta = 75°C
25
–25
2SD669, 2SD669A
5
300
250
200
150
100
50
1130
DC current transfer ratio hFE
300100103 Collector current IC (mA) 1,000 3,000
DC Current Transfer Ratio
vs. Collector Current
VCE = 5 V
Ta = 75°C
–25
25
1.2
1.0
0.8
0.6
0.4
0
0.2
1 3 30 30010 100 1,000
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current IC (mA)
Collector to emitter saturation voltage VCE(sat) (V)
25
–25
T
C
= 75°C
IC = 10 IB
1.2
1.0
0.8
0.6
0.4
0
0.2
1 3 30 30010 100 1,000
Base to Emitter Saturation Voltage
vs. Collector Current
Collector current IC (mA)
Base to emitter saturation voltage VBE(sat) (V)
IC = 10 IB
75
25
T
C
= –25°C
2SD669, 2SD669A
6
240
200
160
120
80
40
010 300
Gain bandwidth product fT (MHz)
1,00010030
Collector current IC (mA)
Gain Bandwidth Product
vs. Collector Current
VCE = 5 V
Ta = 25°C
200
100
50
20
10
5
2110
Collector output capacitance Cob (pF)
502052
Collector to base voltage VCB (V) 100
Collector Output Capacitance
vs. Collector to Base Voltage
f = 1 MHz
IE = 0
2SD669, 2SD669A
7
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