Power Transistor Description: A Silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current. Low capacity, and beta useful over an extremely wide current range. Pin Configurations: 1. Emitter 2. Base 3. Collector Maximum Ratings: Characteristic Symbol Rating Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter Base Voltage VEBO 5 IC 1 Continuous Collector Current Total Device Dissipation -(TA = +25C), Derate Above 25C Total Device Dissipation -(TC = +25C), Derate Above 25C PD Operating Junction Temperature Range TJ Storage Temperature Range, Tstg 60 0.8 4.56 4 22.8 -65 to +200 Thermal Resistance, Junction-to-Case RthJC 20 Thermal Resistance, Junction-to-Ambient RthJA 140 TL 300 Lead temperature (During Soldering, 1/16" from case, 60sec max) Unit V A W mW/C C C/W C www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.0 Power Transistor Electrical Characteristics: (TC = +25C Unless otherwise specified) Parameter Symbol Test Conditions Min Max Unit - V OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)CEO V(BR)EBO Collector Cut-off Current ICBO Emitter Cut-off Current IEBO ON Characteristics DC Current Gain hFE lC = 100mA, IB = 0 lC = 100A, IB = 0 IE = 100A. lC= 0 60 5 VCB = 50V, lE = 0 VCB = 50V, lE = 0,TA = +150C - VBE = 5V, lC = 0 50 10 VCE = 5V, lC = 100A 75 300 VCE = 5V, lC = 100mA 100 VCE = 5V, lC = 100A,TA = -55C 40 VCE = 5V, lC = 500mA 70 VCE = 5V, lC = 1A 40 lC = 150mA, lB = 15mA Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) lC = 150mA, lB = 15mA Base-Emitter ON Voltage VBE(on) VCE = 500mV, lC = 500mA Output Capacitance Cobo VCE = 10V, f = 1MHz Input Capactance CIBO VEB = 500mV, f = 1MHz hfe VCE = 10V, lC = 50mA, f = 500MHz Storage Time ts lC = 500mA, lB1 = lB2 = 50mA Turn-On-Time ton lC = 500mA, lB1 = 50mA Fall Time tf lC = 500mA, lB1 = lB2 = 50mA lC = 500mA, lB = 50mA nA A 0.15 - 0.5 0.9 V 1.1 Small - Signal Characteristics Small Signal Current Gain 1 20 110 4 pF - Switching Characteristics 350 - 100 ns 50 www.element14.com www.farnell.com www.newark.com Page <2> 23/04/13 V1.0 Power Transistor Dim A B C D E F G H J K L Min. 8.5 7.74 6.09 0.4 - 2.41 4.82 0.71 0.73 12.7 42 Max. 9.39 8.5 6.6 0.53 0.88 2.66 5.33 0.86 1.02 - 48 Dimensions : Millimetres Part Number Table Description Part Number Transistor, PNP, 1A, 60V, TO-39 2N4032 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 23/04/13 V1.0