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Power Transistor
Maximum Ratings:
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO
Emitter Base Voltage VEBO 5
Continuous Collector Current IC1 A
Total Device Dissipation -(TA = +25°C),
Derate Above 25°C PD
0.8
4.56 W
mW/°C
Total Device Dissipation -(TC = +25°C),
Derate Above 25°C
4
22.8
Operating Junction Temperature Range TJ-65 to +200 °C
Storage Temperature Range, Tstg
Thermal Resistance, Junction-to-Case RthJC 20 °C/W
Thermal Resistance, Junction-to-Ambient RthJA 140
Lead temperature
(During Soldering, 1/16" from case, 60sec max) TL300 °C
Description:
A Silicon PNP transistor in a TO-39 type case designed primarily for amplier and
switching applications. This device features high breakdown voltage, low leakage current.
Low capacity, and beta useful over an extremely wide current range. Pin Congurations:
1. Emitter
2. Base
3. Collector
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Power Transistor
Electrical Characteristics: (TC = +25°C Unless otherwise specied)
Parameter Symbol Test Conditions Min Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V(BR)CEO
lC = 100mA, IB = 0 60 - VCollector-Base Breakdown Voltage lC = 100µA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA. lC= 0 5
Collector Cut-off Current ICBO
VCB = 50V, lE = 0
-50 nA
VCB = 50V, lE = 0,TA = +150°C µA
Emitter Cut-off Current IEBO VBE = 5V, lC = 0 10
ON Characteristics
DC Current Gain hFE
VCE = 5V, lC = 100µA 75 -
-
VCE = 5V, lC = 100mA 100 300
VCE = 5V, lC = 100µA,TA = -55°C 40
-VCE = 5V, lC = 500mA 70
VCE = 5V, lC = 1A 40
Collector-Emitter Saturation Voltage VCE(sat)
lC = 150mA, lB = 15mA
-
0.15
V
lC = 500mA, lB = 50mA 0.5
Base-Emitter Saturation Voltage VBE(sat) lC = 150mA, lB = 15mA 0.9
Base-Emitter ON Voltage VBE(on) VCE = 500mV, lC = 500mA 1.1
Small - Signal Characteristics
Output Capacitance Cobo VCE = 10V, f = 1MHz -20 pF
Input Capactance CIBO VEB = 500mV, f = 1MHz 110
Small Signal Current Gain hfe VCE = 10V, lC = 50mA, f = 500MHz 1 4 -
Switching Characteristics
Storage Time tslC = 500mA, lB1 = lB2 = 50mA
-
350
nsTurn-On-Time ton lC = 500mA, lB1 = 50mA 100
Fall Time tflC = 500mA, lB1 = lB2 = 50mA 50
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Power Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, PNP, 1A, 60V, TO-39 2N4032
Dimensions : Millimetres
Dim A B C D E F G H J K L
Min. 8.5 7.74 6.09 0.4 - 2.41 4.82 0.71 0.73 12.7 42°
Max. 9.39 8.5 6.6 0.53 0.88 2.66 5.33 0.86 1.02 - 48°
