nV ere erereenireieegmmrer serene en ammamaaeiaal 7964142 SAMSUNG _SEMICONDUCTOR INC 98D. 05224 OTR. 13 DE Bp rseyay2 go05e2e4 3 | a ewes mee Som AE IRFP450/451/452/453 ___ POWER MOSFETS FEATURES Low Rosin) at high voltage . Improved inductive ruggedness Excellent high voltage stability Fast switching times Rugged polysilicon gate cell structure Low Input capacitance - Extended safe operating area improved high temperature reliability TO-3P package . TO-3P PRODUCT SUMMARY Part Number Vos Rosion) lo IRFP250 500V 0.49 13A IRFP251 450V 0.49 | 13A IRFP252 ; 500V 0.59 - 12A . IRFP253 450V 0.50 12A MAXIMUM RATINGS Characteristic Symbol IRFP450 | !IRFP451 IRFP452 | IRFP453 Unit Drain-Source Voltage (1) Voss 500 450 500 450 Vde Drain-Gate Voltage (Rag=1.0MM) (1) Vor 500 450 500 450 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25C Ib 13 13 12 12 Adc Continuous Drain Current Tc=100C Ib 8.0 8.0 7.0 7.0 Adc Drain CurrentPulsed (3) - fom 52 52 48 48 Adc Gate CurrentPulsed lem 21.6 Adc | Total Power Dissipation -@ Tc=25C _ Pp 150 . Watts Derate above 25C 1.2 wee venation Temprature Pango Tu, Tetg ~56 to 150 "ec w purposes, 1/8" fom cose ors seconds qth 300 c Notes: (1) Ts=25C to 160C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature. C58 samsunc SEMICONDUCTOR 223 : .PAB4T4e DOO5eeS a bie eek c aban ced ee 7964142 SAMSUNG | SEMICONDUCTOR, _ING . Ree ee ae 98D 05225 _ N-CHANNEL IRFP450/451/452/453 | POWER MOSFETS ELECTRICAL CHARACTERISTICS (1c=25C unless otherwise specified) Characteristic Symbol| Type |Min}| Typ | Max jUnits Test Conditions IRFPABO 509 | | v Wvas=ov Drain-Source Breakdown BVpss Voltage IRFP451 . . IRFP453 450; - |, Vo tlp=250pA Gate Threshold Voltage Nesth | ALL |}2.0] | 40] V Vos=Ves, Ib>=250pA |Gate-Source Leakage Forward] Igss ALL | ~]| ~ [| 100] nA |Vag=20V Gate-Source Lakage Reverse| less ALL | ] {-100] nA iVes=20V Zerp Gate Voltage loss ALL _ , {| 250] pA |Vos=Max. Rating, Vas=OV Drain Current | | 1000] wA Mps=Max. RatingX0.8, Vas=0V, Tc=125C iRFP450 13 A . in- IRFP451 a \ On-State Drain-Source loon Vos>loron)<Rsion) max, Vas= 10V Current (2). IRFP452 -Ipepasa| 12} | | 4 . IRFP450) 0.381 0.4 | a |. Static Drain-Source On-State | 5 IRFP451 Ves=10V, Ib=7.0A : DS(on} Gs= io=f. Resistance (2) IRFP452 1 . inFP453| | O4 | 0-5 | @ Forward Transconductance (2)! gts ALL |6.0}10.8} | & [Vog>Io(on)XRoston} max., lp=7.0A input Capacitance Ciss ALL {2850} 3000] pF Output Capacitance ; Coss | .ALL | | 350} 600} pF |Ves=OV, Vps=25V, f=1.0MHz Reverse Transfer Capacitance! Cres ALL |150} 200! pF Turn-On Delay Time taton) ALL || 35 | ns Rise Time tr ALL | | | 50 | ns |Yo0=0.5BVoss, lo=7.0A, Zo=4.70 (MOSFET switching times are essentially Turn-Off Delay Time tajory | ALL | | | 150 | NS {independent of operating temperature.) Fall Time ty ALL -|-- 70 | ns Total Gate Charge (Gate-Source Plus Gate-Drain) Qq ALL | ~| 77 | 120} nc, Ves=10V, lp>=16A, Vos=0.8 Max. Rating (Gate charge is essentially Independent of Gate-Source Charge Qas ALL = 11 - nc operating temperature.) Gate-Drain (Miller) Charge | Qgq ALL || 66) | nc THERMAL RESISTANCE Junction-to-Case Rinuc ALL |] | 0.83 | KA Case-to-Sink Rincs ALL |} 0.1 | /W |Mounting surface flat, smooth, and greased Junction-to-Ambient Rina ALL -|- 80 | K/W [Free Air Operation Notes: (1) Ty= 25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3). Repetitive rating: Pulse width limited by | max. function temperature a " gf SAMSUNG SEMICONDUCTOR 224 _D THN98D 05226 N-CHANNEL POWER MOSFETS 79841428 SAMSUNG | 5 SEMICONDUCTOR 1 ANC D 1-39-13 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic_ Symbol] Type [Min] Typ | Max Units Test Conditions \Rresso ~| fis] a : Continuous Source Current 1, [IRAP 451 : Diode (Body Diode) a, [Reese | | 12 | A [Modified MOSFET symbol D showing the integral @ IRFP450/ | 52 | a. jfeverse P-N junction rectifier $ Pulse Source Current ~ Isu IRFP451 . (Body Diode) (3) inFP4s2) | | ag | a ._REP4S3 -- Ihepaes| | | 1-4 | Vv [To=286, is=13A, Vas=0Vv Diode Forward Voltage (2) Vsp . IRFP452 225C. le=12 =ov IRFP453| ~ | 1.3 Vi |Tc=25C, Is=1 A, Ves= Reverse Recovery Time tr |. ALL | {1300] | ns |Ty=150C, [F=13A, dir/dt=100A/us Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300yps, Duty Cycle<2% {3} Repetitive rating: Pulse width limited by max. junction temperature 20 18 @ g a c a w 2 = = = e = # 10 z we 2 5 S 5 3 z - & a 2 s o 60 100 150 200 250 = 300 0 1 2 3 4 5 6 7 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics _ 8 a g c ce Ww g = 6 < e & = 3 3 z Zz 3 < c a $ = IRFP- o 1 2 3 4 5 10 2 5 10 20 60 100 200 500 Vps, DRAIN-TO-SOURCE VOLTAGE {VOLTS} Vos, DRAIN-TO-SQUACE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Safe Operating Area 88 samsuna SEMICONDUCTOR os 226PUbyL42 OOOSe27 4 Je ~ IRFP450/451/452/453 44 DE = oS o- on ZtnsctOlRinsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 7964142 SAMSUNG SEMICONDUCTOR INC_ ___ 38D soe NUCHANNEL POWER MOSFETS / 02 7 0.1 1] te 1 Duty Facior D=te 0.02 Per Unit Base=Ap,=0 83 Dog CW TaarTo=Pou Zeve (1) 5 2 5 2 5 10 2 5 107 2 5 4 2 5 10 t1, SQUARE WAVE PULSE DURATION (SECONDS) Maximum Eft T i Thermal Imped J ion- to-Case Vs. Pulse Duration . a a: & < wi = = = g 5 . g i z = & 5 8 2 z z = 3 o 9 3 a z c < w E a a a . s 01 4 20 0 06 t 1.5 2 26 3 \ .. fo, DRAIN CURRENT (AMPERES) Vso, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transcounductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage 1.25 r n = 2 a (NORMALIZED) BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 2 o S a 18 o 40 80 120 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature 160 a Rosion, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 id = on a 120 -40 160 Ts, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature cb samsunc SEMICONDUCTOR 226 08227 0 7-34-1344 DE ?Ib4Ya4e OooOSee8 o IRFP450/451/452/453 3 C. CAPACITANCE (pF) g Vos, DRAIN-TO-SOURCE VOLTAGE {VOLTS} Typical Capacitance Vs. Drain to Source Voltage OF (HEATING HENIMAL} * Rosen), DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 2 DURATION NITIAL OF PULSE Q 10 20 30 40 50 lp, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Currant 160 = xy oa Pp, POWER DISSIPATION (WATTS) 20 Qo 20 40 660soBO 120 140 Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve 100 Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) tp, DRAIN CURRENT (AMPERES) Z 7964142 _ SAMSUNG SEMICONDUCTOR INC 26 ny a Q att " N-CHANNEL ~ 980. 05228 _O TH: i) POWER MOSFETS 26 S6 Qg, TOTAL GATE CHARGE (nc) Typical Gate Charge Vs. Gate-To-Source Voltage 12 140 100 1 1 25 50 75 Tc, CASE TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature ae SAMSUNG SEMICONDUCTOR 227