A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 15 mA 18 V
BVCES IC = 50 mA 36 V
BVEBO IE = 2.5 mA 4.0 V
ICBO VCB = 15 V 5.0 mA
hFE VCE = 5.0 V IC = 250 mA 5.0 200 ---
COB VCB = 15 V f = 1.0 MHz 65 pF
PG
η
ηη
ηCVCC = 12.5 V POUT = 10 W f = 50 MHz 16
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VLB10-12F
DESCRIPTION:
The ASI VLB10-12F is Designed for
12.5 V, Large Signal Class C Amplifier
Applications up to 50 MHz.
FEATURES:
• Common Emit ter
• PG = 16 dB at 10 W/50 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC2.0 A
VCBO 36 V
VCES 36 V
VEBO 4.0 V
PDISS 35 W @ TC = 25 °C
TJ-65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 5.0 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10732
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
C
BE
E
